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CC2590RGVRG4

Texas Instruments

CC2590RGVRG4 by Texas Instruments

CC2590RGVRG4 by Texas Instruments is a 16-terminal RF amplifier with a gain of 14.1 dB, operating b/w 2400-2483.5 MHz. It has a max input power of 10 dBm and is ideal for narrowband low-power applications in temperatures ranging from -40 to 85°C.

Median Price

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Lifecycle Status

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4

In-Stock Inventory

1k+

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Chip Stock

USA . 18,533 parts In-Stock

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Vyrian

USA . 5,181 parts In-Stock

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Digiode

USA . 1,034 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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Corohmni

South Africa . 324 parts In-Stock

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$1.823

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324

$1.823

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Parana Technologies

USA . 2,151 parts In-Stock

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$1.895

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$2.435

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$1.895

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ChromeModa Solutions

Germany . 5,597 parts In-Stock

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$2.129

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$1.746

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IDEA Electronic Components Group

UK . 374 parts In-Stock

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$2.129

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$1.916

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AZTECH Wire

Italy . 553 parts In-Stock

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$15.332

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One Stop Electronics

USA . 1,486 parts In-Stock

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$31.000

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Ampacity Inc.

Singapore . 1,017 parts In-Stock

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$35.000

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Continental Prestige Electronics

USA . 4,762 parts In-Stock

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Argo Parts USA

USA . 2,102 parts In-Stock

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Corphita

USA . 1,907 parts In-Stock

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DigiPath Technology Company

USA . 1,652 parts In-Stock

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Bastille Electronics

Australia . 10 parts In-Stock

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Overview

Enhance the performance of your RF applications with the CC2590RGVRG4 by Texas Instruments. Known for its superior quality and reliability, Texas Instruments offers cutting-edge technology in RF & Microwave Amplifiers. This component is designed to optimize signal strength and range, making it ideal for wireless communication systems, IoT devices, and smart home products. With a compact design and easy installation, this amplifier provides value and efficiency that will elevate your projects to new heights. Trust Texas Instruments to deliver excellence in every component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and reliability to the product, making it a suitable choice for long-term use.

Maximum Input Power (CW): 10 dBm

With a high maximum input power, this amplifier can handle strong signals without distortion, ensuring accurate and clear output.

Construction: COMPONENT

The use of high-quality components in construction ensures excellent performance and reliability, making it a dependable choice for RF applications.

Power Supplies (V): 3

Operating at a low voltage of 3V, this amplifier is energy-efficient and can be easily integrated into various systems.

No. of Terminals: 16

With a high number of terminals, this amplifier offers flexibility and compatibility with different setups, making it versatile for various applications.

Maximum Operating Temperature: 85 °C

Able to operate at high temperatures, this amplifier is suitable for demanding environments and prolonged use.

Minimum Operating Temperature: -40 °C

With a low minimum operating temperature, this amplifier can withstand cold conditions, ensuring reliable performance in diverse environments.

Terminal Finish: NICKEL PALLADIUM GOLD

The use of high-quality terminal finish ensures excellent conductivity and resistance to corrosion, enhancing the overall durability and performance of the product.

RF or Microwave Device Type: NARROW BAND LOW POWER

Designed for narrowband low-power applications, this amplifier offers precise amplification and efficiency, making it ideal for specific frequency ranges.

Gain: 14.1 dB

With a high gain of 14.1 dB, this amplifier boosts signal strength effectively, improving overall signal quality and transmission performance.

Minimum Operating Frequency: 2400 MHz

Operating at a minimum frequency of 2400 MHz, this amplifier is suitable for applications requiring low-frequency signals with high accuracy and reliability.

Mounting Feature: SURFACE MOUNT

Featuring a surface mount design, this amplifier can be easily installed on circuit boards, saving space and simplifying integration into various systems.

Maximum Operating Frequency: 2483.5 MHz

With a maximum operating frequency of 2483.5 MHz, this amplifier is capable of handling high-frequency signals with precision, making it suitable for broadband applications.

Technical Specifications

RF & Microwave Amplifiers CC2590RGVRG4 attributes and parameters. Explore more RF & Microwave Amplifiers devices from Texas Instruments

Specs

Additional Features:

LOW NOISE

Construction:

COMPONENT

Gain:

14.1 dB

Maximum Input Power (CW):

10 dBm

JESD-609 Code:

e4

Mounting Feature:

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Frequency:

2483.5 MHz

Minimum Operating Frequency:

2400 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Power Supplies (V):

3

RF or Microwave Device Type:

Terminal Finish:

NICKEL PALLADIUM GOLD

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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