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RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.

RF & Microwave Amplifiers

Available Parts 644

Part# Info Specs
Part RoHS Manufacturer Description Additional Features Characteristic Impedance Construction Gain Maximum Input Power (CW) JESD-609 Code Mounting Feature No. of Functions No. of Terminals Maximum Operating Frequency Minimum Operating Frequency Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Equivalence Code Power Supplies (V) RF or Microwave Device Type Screening Level Sub-Category Maximum Supply Current Maximum Supply Voltage Technology Terminal Finish Maximum Voltage Standing Wave Ratio
HMC1040CHIPS-SX by Analog Devices

HMC1040CHIPS-SX

Analog Devices

HMC1040CHIPS-SX by Analog Devices is a wide band low power RF amplifier with a gain of 19 dB. It operates in a frequency range of 20-44 GHz and can handle max input power of 5 dBm. This component is suitable for applications requiring RF amplification in the microwave frequency range.

50 ohm

COMPONENT

19 dB

5 dBm

44000 MHz

20000 MHz

85 Cel

-55 Cel

WIDE BAND LOW POWER

ADMV7710-SX by Analog Devices

ADMV7710-SX

Analog Devices

Analog Devices' ADMV7710-SX is a wide band medium power RF amplifier with 21 dB gain, operating from 71-76 GHz. Ideal for applications requiring high-frequency amplification in temperatures ranging from -55 to 85 °C.

50 ohm

COMPONENT

21 dB

76000 MHz

71000 MHz

85 Cel

-55 Cel

WIDE BAND MEDIUM POWER

AFIC31025GNR1 by NXP Semiconductors

AFIC31025GNR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 17; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Characteristic Impedance: 50 ohm;

50 ohm

COMPONENT

30.5 dB

20 dBm

e3

SURFACE MOUNT

2

17

3100 MHz

2400 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

28

NARROW BAND HIGH POWER

LDMOS

TIN

10

HMC1114PM5ETR by Analog Devices

HMC1114PM5ETR

Analog Devices

Analog Devices' HMC1114PM5ETR is a GaN wide band high power RF amplifier with 31 dB gain, operating from 2.7 GHz to 3.8 GHz. It has a max input power of 18 dBm and VSWR of 6, suitable for applications requiring high power amplification in the RF & Microwave field. The component features a surface mount package body material made of plastic/epoxy, with a max supply current of 150 mA at 28V.

50 ohm

COMPONENT

31 dB

18 dBm

e4

SURFACE MOUNT

1

32

3800 MHz

2700 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC32,.2SQ,20

28

WIDE BAND HIGH POWER

150 mA

GAN

NICKEL PALLADIUM GOLD

6

ADPA7001CHIPS-SX by Analog Devices

ADPA7001CHIPS-SX

Analog Devices

ADPA7001CHIPS-SX by Analog Devices is a RF amplifier with 12 dB gain, operating frequency range of 50-95 GHz, and max input power of 17 dBm. It is ideal for wide band medium power applications requiring a characteristic impedance of 50 ohm. With PHEMT technology and low supply current of 350 mA at 3.5 V, it can operate in temperatures ranging from -55 to 85°C.

50 ohm

COMPONENT

12 dB

17 dBm

1

95000 MHz

50000 MHz

85 Cel

-55 Cel

DIE OR CHIP

3.5

WIDE BAND MEDIUM POWER

350 mA

PHEMT

A3I35D012WGNR1 by NXP Semiconductors

A3I35D012WGNR1

NXP Semiconductors

NARROW BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 17; Package Body Material: PLASTIC/EPOXY; Maximum Operating Temperature: 150 Cel; Maximum Operating Frequency: 4000 MHz;

50 ohm

COMPONENT

26.5 dB

26 dBm

SURFACE MOUNT

2

17

4000 MHz

3200 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

FLNG,.72"H.SPACE

28

NARROW BAND MEDIUM POWER

ADL8111ACCZN-R7 by Analog Devices

ADL8111ACCZN-R7

Analog Devices

ADL8111ACCZN-R7 by Analog Devices is a wide band low power RF amplifier with 10.6 dB gain, operating from 10 MHz to 8000 MHz. It can handle up to 20 dBm CW input power and operates b/w -40 °C to 85°C. Ideal for RF & microwave applications requiring high frequency amplification in a compact component design.

50 ohm

COMPONENT

10.6 dB

20 dBm

8000 MHz

10 MHz

85 Cel

-40 Cel

WIDE BAND LOW POWER

ADPA7002C-KIT by Analog Devices

ADPA7002C-KIT

Analog Devices

ADPA7002C-KIT by Analog Devices is a GAAS technology RF amplifier with 12 dB gain, operating from 20-44 GHz. It has a max input power of 25 dBm and operates b/w -55 to 85°C. Ideal for wideband medium-power applications requiring surface mount construction.

50 ohm

COMPONENT

12 dB

25 dBm

SURFACE MOUNT

1

22

44000 MHz

20000 MHz

85 Cel

-55 Cel

DIE OR CHIP

5

WIDE BAND MEDIUM POWER

GAAS

HMC8411TCPZ-EP-R7 by Analog Devices

HMC8411TCPZ-EP-R7

Analog Devices

Analog Devices' HMC8411TCPZ-EP-R7 is a wide band low power RF amplifier with 11 dB gain and 20 dBm CW input power. Operating from 10 MHz to 10 GHz, it's ideal for RF & microwave applications requiring high performance in extreme temperatures (-55 °C to 125°C).

50 ohm

COMPONENT

11 dB

20 dBm

10000 MHz

10 MHz

125 Cel

-55 Cel

WIDE BAND LOW POWER

ADPA7005AEHZ-R7 by Analog Devices

ADPA7005AEHZ-R7

Analog Devices

ADPA7005AEHZ-R7 by Analog Devices is a wide band medium power RF amplifier with 12 dB gain, operating from 18-44 GHz. It can handle up to 27 dBm CW input power and operates in temperatures ranging from -40 °C to 85°C. Ideal for applications requiring high frequency amplification in RF & microwave systems.

50 ohm

COMPONENT

12 dB

27 dBm

44000 MHz

18000 MHz

85 Cel

-40 Cel

WIDE BAND MEDIUM POWER

A3I20X050GNR1 by NXP Semiconductors

A3I20X050GNR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 7; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Power Supplies (V): 2.15/28;

50 ohm

COMPONENT

28 dB

20 dBm

e3

SURFACE MOUNT

1

7

2200 MHz

1800 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

2.15/28

NARROW BAND HIGH POWER

LDMOS

TIN

ADPA7002AEHZ-R7 by Analog Devices

ADPA7002AEHZ-R7

Analog Devices

ADPA7002AEHZ-R7 by Analog Devices is a ceramic-packaged RF amplifier with 25 dBm CW input power, 13.5 dB gain, and wideband medium power technology. It operates b/w -40 °C to 85°C, suitable for applications requiring surface mounting in the frequency range of 18-44 GHz.

50 ohm

COMPONENT

13.5 dB

25 dBm

SURFACE MOUNT

1

16

44000 MHz

18000 MHz

85 Cel

-40 Cel

CERAMIC

5

WIDE BAND MEDIUM POWER

GAAS

HMC716ALP3ETR by Analog Devices

HMC716ALP3ETR

Analog Devices

HMC716ALP3ETR by Analog Devices is a RF amplifier with 15.5 dB gain, operating frequency range of 3100-3900 MHz, and 50 ohm impedance. It has a max input power of 10 dBm and VSWR of 1.38, suitable for narrow band low power applications in the RF & Microwave field. The component is constructed using GaAs technology and can operate b/w -40 to 85 °C temperature range.

50 ohm

COMPONENT

15.5 dB

10 dBm

SURFACE MOUNT

1

16

3900 MHz

3100 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC16,.12SQ,20

3,5

NARROW BAND LOW POWER

90 mA

GAAS

1.38

HMC8412LP2FETR by Analog Devices

HMC8412LP2FETR

Analog Devices

HMC8412LP2FETR by Analog Devices is a wide band low power RF amplifier with 12 dB gain, operating from 400 MHz to 11 GHz. It has a max input power of 25 dBm and VSWR of 1.375, suitable for applications requiring high frequency amplification in RF & microwave systems. With a compact surface mount construction and operating temperatures from -40°C to 85°C, it offers reliable performance in various environments.

50 ohm

COMPONENT

12 dB

25 dBm

e4

SURFACE MOUNT

1

6

11000 MHz

400 MHz

85 Cel

-40 Cel

SOLCC6,.08,25

5

WIDE BAND LOW POWER

NICKEL PALLADIUM GOLD

1.375

HMC8412LP2FE by Analog Devices

HMC8412LP2FE

Analog Devices

Analog Devices' HMC8412LP2FE is a wide band low power RF amplifier with 12 dB gain, operating from 400 MHz to 11 GHz. It has a max input power of 25 dBm and VSWR of 1.375, suitable for surface mount applications in RF & microwave systems.

50 ohm

COMPONENT

12 dB

25 dBm

e4

SURFACE MOUNT

1

6

11000 MHz

400 MHz

85 Cel

-40 Cel

SOLCC6,.08,25

5

WIDE BAND LOW POWER

NICKEL PALLADIUM GOLD

1.375

ADPA7004CHIP-SX by Analog Devices

ADPA7004CHIP-SX

Analog Devices

ADPA7004CHIP-SX by Analog Devices is a PHEMT technology RF amplifier with 13dB gain, operating from 40-80GHz. It has a max input power of 18dBm and VSWR of 1.15, suitable for wideband medium-power applications in RF & microwave systems.

50 ohm

COMPONENT

13 dB

18 dBm

SURFACE MOUNT

1

16

80000 MHz

40000 MHz

85 Cel

-55 Cel

DIE OR CHIP

-0.4,3.5

WIDE BAND MEDIUM POWER

PHEMT

1.15

ADPA7009CHIP by Analog Devices

ADPA7009CHIP

Analog Devices

ADPA7009CHIP by Analog Devices is a PHEMT technology RF amplifier with 20 dBm CW input power, 1.17 VSWR, and 17.5 dB gain. It operates b/w -55 °C to 85°C, covering frequencies from 20 GHz to 54 GHz. Ideal for wideband medium-power applications requiring surface mounting feature.

50 ohm

COMPONENT

17.5 dB

20 dBm

SURFACE MOUNT

1

10

54000 MHz

20000 MHz

85 Cel

-55 Cel

DIE OR CHIP

5

WIDE BAND MEDIUM POWER

PHEMT

1.17

ADL8121ACPZN by Analog Devices

ADL8121ACPZN

Analog Devices

ADL8121ACPZN by Analog Devices is a PHEMT RF amplifier with 15dB gain, 32dBm CW input power, and 1.43 VSWR. Ideal for wideband low-power applications in the RF & microwave field, it operates from -40°C to 85°C with a frequency range of 25MHz to 12GHz.

50 ohm

COMPONENT

15 dB

32 dBm

SURFACE MOUNT

1

6

12000 MHz

25 MHz

85 Cel

-40 Cel

SOLCC6,.08,25

5

WIDE BAND LOW POWER

PHEMT

1.43

ADL8121ACPZN-R7 by Analog Devices

ADL8121ACPZN-R7

Analog Devices

ADL8121ACPZN-R7 by Analog Devices is a PHEMT RF amplifier with 15dB gain, 32dBm CW input power, and 1.43 VSWR. Ideal for wideband low-power applications from 25MHz to 12GHz, it operates b/w -40°C to +85°C with a characteristic impedance of 50Ω. Suitable for surface mount installations with a 5V power supply requirement.

50 ohm

COMPONENT

15 dB

32 dBm

SURFACE MOUNT

1

6

12000 MHz

25 MHz

85 Cel

-40 Cel

SOLCC6,.08,25

5

WIDE BAND LOW POWER

PHEMT

1.43

ADL8142ACPZN by Analog Devices

ADL8142ACPZN

Analog Devices

ADL8142ACPZN by Analog Devices is a PHEMT RF amplifier with 24.5 dB gain, operating b/w 23-31 GHz. It has a max input power of 20 dBm and VSWR of 1.38, suitable for wideband low-power applications in RF & microwave systems. With surface mounting feature, it operates from -40 to 85°C with a characteristic impedance of 50 ohms.

50 ohm

COMPONENT

24.5 dB

20 dBm

SURFACE MOUNT

1

8

31000 MHz

23000 MHz

85 Cel

-40 Cel

SOLCC8,.08,20

2

WIDE BAND LOW POWER

PHEMT

1.38

ADL8142ACPZN-R7 by Analog Devices

ADL8142ACPZN-R7

Analog Devices

ADL8142ACPZN-R7 by Analog Devices is a PHEMT RF amplifier with 24.5 dB gain, operating b/w 23-31 GHz. It has a max input power of 20 dBm and VSWR of 1.38, suitable for wideband low-power applications in RF & microwave systems. With surface mounting feature, it operates from -40 to 85°C with a supply voltage of 2V.

50 ohm

COMPONENT

24.5 dB

20 dBm

SURFACE MOUNT

1

8

31000 MHz

23000 MHz

85 Cel

-40 Cel

SOLCC8,.08,20

2

WIDE BAND LOW POWER

PHEMT

1.38

ADPA1106ACGZN by Analog Devices

ADPA1106ACGZN

Analog Devices

ADPA1106ACGZN by Analog Devices is a GAN technology RF amplifier with 33.5 dB gain, operating from 2700 MHz to 3500 MHz. It has a max input power of 30 dBm and VSWR of 2.1, suitable for wideband medium-power applications in RF & microwave systems.

50 ohm

COMPONENT

33.5 dB

30 dBm

SURFACE MOUNT

1

32

3500 MHz

2700 MHz

85 Cel

-40 Cel

LCC32,.2SQ,20

50

WIDE BAND MEDIUM POWER

GAN

2.1

ADPA1106ACGZN-R7 by Analog Devices

ADPA1106ACGZN-R7

Analog Devices

ADPA1106ACGZN-R7 by Analog Devices is a GAN technology RF amplifier with 33.5 dB gain, operating b/w 2700-3500 MHz. It has a max input power of 30 dBm and VSWR of 2.1, suitable for wideband medium-power applications in RF & microwave systems.

50 ohm

COMPONENT

33.5 dB

30 dBm

SURFACE MOUNT

1

32

3500 MHz

2700 MHz

85 Cel

-40 Cel

LCC32,.2SQ,20

50

WIDE BAND MEDIUM POWER

GAN

2.1

MAX2644EXT by Maxim Integrated

MAX2644EXT

Maxim Integrated

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Minimum Operating Frequency: 2400 MHz;

50 ohm

COMPONENT

15 dB

5 dBm

e4

SURFACE MOUNT

1

6

2500 MHz

2400 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

TSSOP6,.08

3

WIDE BAND MEDIUM POWER

11 mA

BIPOLAR

NICKEL PALLADIUM GOLD

BGA428H6327XTSA1 by Infineon Technologies

BGA428H6327XTSA1

Infineon Technologies

NARROW BAND LOW POWER; Characteristic Impedance: 50 ohm; Maximum Input Power (CW): 8 dBm; Gain: 20 dB; Construction: COMPONENT; Maximum Operating Temperature: 85 Cel;

50 ohm

COMPONENT

20 dB

8 dBm

85 Cel

-40 Cel

NARROW BAND LOW POWER

BGA461E6327XTSA1 by Infineon Technologies

BGA461E6327XTSA1

Infineon Technologies

WIDE BAND LOW POWER; Construction: COMPONENT; Gain: 19.5 dB; Maximum Input Power (CW): 10 dBm; Minimum Operating Temperature: -30 Cel; Characteristic Impedance: 50 ohm;

50 ohm

COMPONENT

19.5 dB

10 dBm

85 Cel

-30 Cel

WIDE BAND LOW POWER

BGA615L7E6327XTSA1 by Infineon Technologies

BGA615L7E6327XTSA1

Infineon Technologies

NARROW BAND MEDIUM POWER; Maximum Input Power (CW): 10 dBm; Minimum Operating Temperature: -30 Cel; Gain: 18 dB; Additional Features: LOW NOISE; Maximum Operating Temperature: 85 Cel;

LOW NOISE

50 ohm

COMPONENT

18 dB

10 dBm

85 Cel

-30 Cel

NARROW BAND MEDIUM POWER

BGA616E6327HTSA1 by Infineon Technologies

BGA616E6327HTSA1

Infineon Technologies

WIDE BAND LOW POWER; Gain: 18 dB; Maximum Operating Frequency: 2700 MHz; Maximum Operating Temperature: 150 Cel; Minimum Operating Temperature: -65 Cel; Minimum Operating Frequency: 0 MHz;

50 ohm

COMPONENT

18 dB

10 dBm

2700 MHz

0 MHz

150 Cel

-65 Cel

WIDE BAND LOW POWER

BGA628L7E6327XTMA1 by Infineon Technologies

BGA628L7E6327XTMA1

Infineon Technologies

WIDE BAND LOW POWER; Characteristic Impedance: 50 ohm; Minimum Operating Temperature: -65 Cel; Maximum Operating Temperature: 150 Cel; Construction: COMPONENT; Maximum Operating Frequency: 6000 MHz;

50 ohm

COMPONENT

10 dB

6 dBm

6000 MHz

400 MHz

150 Cel

-65 Cel

WIDE BAND LOW POWER

BGA711L7E6327XTSA1 by Infineon Technologies

BGA711L7E6327XTSA1

Infineon Technologies

NARROW BAND MEDIUM POWER; Additional Features: LOW NOISE; Gain: 16.7 dB; Maximum Input Power (CW): 4 dBm; Maximum Operating Temperature: 85 Cel; Minimum Operating Frequency: 2110 MHz;

LOW NOISE

50 ohm

COMPONENT

16.7 dB

4 dBm

2155 MHz

2110 MHz

85 Cel

-30 Cel

NARROW BAND MEDIUM POWER

BGA715L7E6327XTSA1 by Infineon Technologies

BGA715L7E6327XTSA1

Infineon Technologies

NARROW BAND LOW POWER; Characteristic Impedance: 50 ohm; Construction: COMPONENT; Minimum Operating Temperature: -40 Cel; Additional Features: LOW NOISE; Maximum Input Power (CW): 10 dBm;

LOW NOISE

50 ohm

COMPONENT

20 dB

10 dBm

85 Cel

-40 Cel

NARROW BAND LOW POWER

BGA751L7E6327XTSA1 by Infineon Technologies

BGA751L7E6327XTSA1

Infineon Technologies

NARROW BAND LOW POWER; Maximum Operating Frequency: 885 MHz; Maximum Operating Temperature: 85 Cel; Minimum Operating Temperature: -30 Cel; Characteristic Impedance: 50 ohm; Construction: COMPONENT;

LOW NOISE

50 ohm

COMPONENT

15.8 dB

4 dBm

885 MHz

875 MHz

85 Cel

-30 Cel

NARROW BAND LOW POWER

HMC1126 by Analog Devices

HMC1126

Analog Devices

Analog Devices' HMC1126 is a wide band low power RF amplifier with 8 dB gain and 22 dBm CW input power. Operating from -55 °C to 85°C, it covers frequencies from 2 GHz to 50 GHz. Ideal for RF & microwave applications requiring high performance in a compact component package.

50 ohm

COMPONENT

8 dB

22 dBm

50000 MHz

2000 MHz

85 Cel

-55 Cel

WIDE BAND LOW POWER

HMC1127 by Analog Devices

HMC1127

Analog Devices

Analog Devices' HMC1127 is a wide band low power RF amplifier with 11.5 dB gain and 22 dBm max input power. Operating from 2-50 GHz, it's ideal for RF & microwave applications requiring high performance in temperatures ranging from -55 to 85 °C.

50 ohm

COMPONENT

11.5 dB

22 dBm

50000 MHz

2000 MHz

85 Cel

-55 Cel

WIDE BAND LOW POWER

HMC1131LC4TR by Analog Devices

HMC1131LC4TR

Analog Devices

HMC1131LC4TR by Analog Devices is a wide band low power RF amplifier with 22 dB gain, operating from 24 to 35 GHz. It has a max input power of 12 dBm and operates on a 5V power supply. This ceramic-packaged component is ideal for RF and microwave applications requiring high frequency amplification in the -40 to +85°C temperature range.

50 ohm

COMPONENT

22 dB

12 dBm

e4

SURFACE MOUNT

1

24

35000 MHz

24000 MHz

85 Cel

-40 Cel

CERAMIC

LCC24,.16SQ,20

5

WIDE BAND LOW POWER

GAAS

GOLD NICKEL

HMC1131LC4 by Analog Devices

HMC1131LC4

Analog Devices

HMC1131LC4 by Analog Devices is a wide band low power RF amplifier with 22 dB gain. It operates from 24 to 35 GHz, handling up to 12 dBm CW input power. This ceramic-packaged component is ideal for RF and microwave applications requiring high performance in a compact form factor.

50 ohm

COMPONENT

22 dB

12 dBm

e4

SURFACE MOUNT

1

24

35000 MHz

24000 MHz

85 Cel

-40 Cel

CERAMIC

LCC24,.16SQ,20

5

WIDE BAND LOW POWER

GAAS

GOLD NICKEL

HMC1144 by Analog Devices

HMC1144

Analog Devices

Analog Devices' HMC1144 is a wide band low power RF amplifier with 17 dB gain, operating from 35-70 GHz. It can handle up to 22 dBm CW input power and operates b/w -55°C to +85°C. Ideal for RF & microwave applications requiring high frequency amplification in a compact component design.

50 ohm

COMPONENT

17 dB

22 dBm

70000 MHz

35000 MHz

85 Cel

-55 Cel

WIDE BAND LOW POWER

UPC2746TB-E3-A by Renesas Electronics

UPC2746TB-E3-A

Renesas Electronics

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; No. of Functions: 1;

SURFACE MOUNT

1

6

85 Cel

-40 Cel

PLASTIC/EPOXY

TSSOP6,.08

3

WIDE BAND LOW POWER

RF/Microwave Amplifiers

10 mA

BIPOLAR

HMC1114LP5DE by Analog Devices

HMC1114LP5DE

Analog Devices

HMC1114LP5DE by Analog Devices is a GAN technology RF amplifier with 29 dB gain, operating from 2700 MHz to 3800 MHz. It has a max input power of 30 dBm and operates at temperatures ranging from -40 °C to 85°C. Ideal for wideband high-power applications requiring a component construction with surface mounting feature.

50 ohm

COMPONENT

29 dB

30 dBm

SURFACE MOUNT

1

32

3800 MHz

2700 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC32,.2SQ,20

28

WIDE BAND HIGH POWER

150 mA

GAN

HMC930A by Analog Devices

HMC930A

Analog Devices

Analog Devices' HMC930A is a wide band medium power RF amplifier with 10 dB gain and 22 dBm max input power. With a VSWR of 7, it operates from -55°C to 85°C, making it suitable for various RF and microwave applications up to 40 GHz.

50 ohm

COMPONENT

10 dB

22 dBm

40000 MHz

0 MHz

85 Cel

-55 Cel

WIDE BAND MEDIUM POWER

7

HMC1087F10 by Analog Devices

HMC1087F10

Analog Devices

HMC1087F10 by Analog Devices is a GAN technology RF amplifier with 11dB gain, operating from 2-20GHz. It has a max input power of 34dBm and VSWR of 6, suitable for wideband high-power applications in RF & microwave systems. The ceramic package, surface mountable device operates b/w -40 to +85°C with a 28V supply.

50 ohm

COMPONENT

11 dB

34 dBm

SURFACE MOUNT

1

10

20000 MHz

2000 MHz

85 Cel

-40 Cel

CERAMIC

28

WIDE BAND HIGH POWER

GAN

6

HMC1099LP5DETR by Analog Devices

HMC1099LP5DETR

Analog Devices

HMC1099LP5DETR by Analog Devices is a GAN technology RF amplifier with 16.5 dB gain, operating from 10 MHz to 1100 MHz. It has a max input power of 33 dBm and VSWR of 6, suitable for wideband high-power applications in RF and microwave systems. The component is housed in a plastic/epoxy package with 32 terminals, designed for surface mount installation at temperatures ranging from -40 °C to 85°C.

50 ohm

COMPONENT

16.5 dB

33 dBm

SURFACE MOUNT

1

32

1100 MHz

10 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC32,.2SQ,20

28

WIDE BAND HIGH POWER

100 mA

GAN

6

HMC-AUH312-SX by Analog Devices

HMC-AUH312-SX

Analog Devices

Analog Devices' HMC-AUH312-SX is a wide band low power RF amplifier with 8 dB gain and 10 dBm CW input power. Operating from 500 MHz to 80 GHz, it's ideal for RF & microwave applications requiring high performance in temperatures ranging from -55°C to 85°C.

50 ohm

COMPONENT

8 dB

10 dBm

80000 MHz

500 MHz

85 Cel

-55 Cel

WIDE BAND LOW POWER

HMC637A by Analog Devices

HMC637A

Analog Devices

Analog Devices' HMC637A is a wide band medium power RF amplifier with 11 dB gain and 25 dBm max input power. Operating from -55 °C to 85°C, it covers frequencies from 0 MHz to 6 GHz. Ideal for RF & microwave applications requiring high performance in a compact component package.

50 ohm

COMPONENT

11 dB

25 dBm

6000 MHz

0 MHz

85 Cel

-55 Cel

WIDE BAND MEDIUM POWER

HMC5805ALS6 by Analog Devices

HMC5805ALS6

Analog Devices

Analog Devices' HMC5805ALS6 is a wide band low power RF amplifier with 9 dB gain and 50 ohm impedance. It operates from 0 to 40 GHz, handling up to 22 dBm CW input power. Ideal for applications requiring high frequency amplification in extreme temperature environments.

50 ohm

COMPONENT

9 dB

22 dBm

e4

40000 MHz

0 MHz

85 Cel

-40 Cel

WIDE BAND LOW POWER

GOLD OVER NICKEL

HMC8400 by Analog Devices

HMC8400

Analog Devices

Analog Devices' HMC8400 is a wide band low power RF amplifier with 11.5 dB gain, handling up to 23 dBm CW input power. Operating from -55 °C to 85°C, it covers frequencies from 2 GHz to 30 GHz. Ideal for RF and microwave applications requiring high performance in a compact component design.

50 ohm

COMPONENT

11.5 dB

23 dBm

30000 MHz

2000 MHz

85 Cel

-55 Cel

WIDE BAND LOW POWER

HMC7748 by Analog Devices

HMC7748

Analog Devices

Analog Devices' HMC7748 is a wide band high power RF amplifier with 58 dB gain, operating from 2-6 GHz. It has a max input power of 8 dBm and VSWR of 6, suitable for applications requiring high power amplification in RF & microwave systems. The component is constructed with plastic/epoxy package body material and can be surface mounted, making it versatile for various temperature environments.

50 ohm

COMPONENT

58 dB

8 dBm

SURFACE MOUNT

1

6

6000 MHz

2000 MHz

70 Cel

-40 Cel

PLASTIC/EPOXY

MODULE,6LEAD,2.9

12,28

WIDE BAND HIGH POWER

4000 mA

6

HMC8120-SX by Analog Devices

HMC8120-SX

Analog Devices

HMC8120-SX by Analog Devices is a wide band low power RF amplifier with 19 dB gain. Operating frequency range from 71-76 GHz, ideal for high-frequency applications. Features PHEMT technology, 50 ohm impedance, and surface mounting for easy integration.

50 ohm

COMPONENT

19 dB

SURFACE MOUNT

1

28

76000 MHz

71000 MHz

85 Cel

-55 Cel

4

WIDE BAND LOW POWER

250 mA

PHEMT