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RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.

RF & Microwave Amplifiers

Available Parts 644

Part# Info Specs
Part RoHS Manufacturer Description Additional Features Characteristic Impedance Construction Gain Maximum Input Power (CW) JESD-609 Code Mounting Feature No. of Functions No. of Terminals Maximum Operating Frequency Minimum Operating Frequency Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Equivalence Code Power Supplies (V) RF or Microwave Device Type Screening Level Sub-Category Maximum Supply Current Maximum Supply Voltage Technology Terminal Finish Maximum Voltage Standing Wave Ratio
HMC1132PM5E by Analog Devices

HMC1132PM5E

Analog Devices

Analog Devices' HMC1132PM5E is a wide band medium power RF amplifier with 21 dB gain and 50 ohm impedance. It operates b/w 27-32 GHz, handles up to 18 dBm CW input power, and has a VSWR of 7. Ideal for RF & microwave applications requiring high performance in temperatures ranging from -55 to +85°C.

50 ohm

COMPONENT

21 dB

18 dBm

32000 MHz

27000 MHz

85 Cel

-55 Cel

WIDE BAND MEDIUM POWER

7

A2I09VD050GNR1 by NXP Semiconductors

A2I09VD050GNR1

NXP Semiconductors

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Minimum Operating Temperature: -40 Cel;

50 ohm

COMPONENT

35 dB

20 dBm

e3

SURFACE MOUNT

1

12

960 MHz

575 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

48

WIDE BAND HIGH POWER

LDMOS

TIN

10

CMPA5259050F by Wolfspeed

CMPA5259050F

Wolfspeed

The Wolfspeed CMPA5259050F is a ceramic RF amplifier with 31dB gain, operating b/w 5200-5900 MHz. It features PHEMT technology, 50 ohm impedance, and can handle up to 28V power supplies. Ideal for wideband high-power applications requiring surface mounting in temperatures ranging from -40 to 105°C.

50 ohm

COMPONENT

31 dB

SURFACE MOUNT

1

6

5900 MHz

5200 MHz

105 Cel

-40 Cel

CERAMIC

28

WIDE BAND HIGH POWER

1000 mA

PHEMT

3

HMC8415LP6GETR by Analog Devices

HMC8415LP6GETR

Analog Devices

Analog Devices' HMC8415LP6GETR is a wideband high-power RF amplifier with 25.5 dB gain, operating from 9-10.5 GHz. It can handle up to 30 dBm CW input power and operates in temperatures ranging from -40 °C to 85°C. Ideal for RF and microwave applications requiring high power amplification in a compact component design.

50 ohm

COMPONENT

25.5 dB

30 dBm

e3

10500 MHz

9000 MHz

85 Cel

-40 Cel

WIDE BAND HIGH POWER

MATTE TIN

HMC8415LP6GE by Analog Devices

HMC8415LP6GE

Analog Devices

Analog Devices' HMC8415LP6GE is a wide band high power RF amplifier with 25.5 dB gain, operating from 9-10.5 GHz. It can handle up to 30 dBm CW input power and operates b/w -40 to +85°C. Ideal for RF & microwave applications requiring high power amplification in a compact component form factor.

50 ohm

COMPONENT

25.5 dB

30 dBm

e3

10500 MHz

9000 MHz

85 Cel

-40 Cel

WIDE BAND HIGH POWER

MATTE TIN

HMC1114PM5E by Analog Devices

HMC1114PM5E

Analog Devices

Analog Devices' HMC1114PM5E is a GaN wide band high power RF amplifier with 31 dB gain, operating from 2.7 GHz to 3.8 GHz. It has a max input power of 18 dBm and VSWR of 6, suitable for applications requiring high-power amplification in the RF & microwave domain. The component is housed in a plastic/epoxy package with 32 terminals, designed for surface mount installation.

50 ohm

COMPONENT

31 dB

18 dBm

e4

SURFACE MOUNT

1

32

3800 MHz

2700 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC32,.2SQ,20

28

WIDE BAND HIGH POWER

150 mA

GAN

NICKEL PALLADIUM GOLD

6

ADPA7001CHIPS by Analog Devices

ADPA7001CHIPS

Analog Devices

ADPA7001CHIPS by Analog Devices is a PHEMT technology RF amplifier with 12 dB gain, operating b/w 50-95 GHz. It has a max input power of 17 dBm and requires a 3.5V power supply. Ideal for wide band medium power applications in RF & Microwave systems, it offers reliable performance from -55 to 85°C.

50 ohm

COMPONENT

12 dB

17 dBm

1

95000 MHz

50000 MHz

85 Cel

-55 Cel

DIE OR CHIP

3.5

WIDE BAND MEDIUM POWER

350 mA

PHEMT

HMC8205BCHIPS by Analog Devices

HMC8205BCHIPS

Analog Devices

Analog Devices' HMC8205BCHIPS is a wide band high power RF amplifier with 24.5 dB gain, operating from 400 MHz to 6 GHz. It can handle up to 35 dBm CW input power and operates in temperatures ranging from -55°C to 85°C. Ideal for RF & microwave applications requiring high power amplification.

50 ohm

COMPONENT

24.5 dB

35 dBm

6000 MHz

400 MHz

85 Cel

-55 Cel

WIDE BAND HIGH POWER

ADPA7002CHIP by Analog Devices

ADPA7002CHIP

Analog Devices

ADPA7002CHIP by Analog Devices is a wide band medium power RF amplifier with 12 dB gain and 25 dBm max input power. Operating from 20-44 GHz, it is ideal for applications requiring high-frequency amplification in temperatures ranging from -55 to 85 °C.

50 ohm

COMPONENT

12 dB

25 dBm

44000 MHz

20000 MHz

85 Cel

-55 Cel

WIDE BAND MEDIUM POWER

ADPA7005CHIP by Analog Devices

ADPA7005CHIP

Analog Devices

ADPA7005CHIP by Analog Devices is a wide band medium power RF amplifier with 11.5 dB gain, operating from 20-44 GHz. It can handle up to 27 dBm CW input power and operates in temperatures ranging from -55 °C to 85°C. Ideal for applications requiring high frequency amplification in RF & microwave systems.

50 ohm

COMPONENT

11.5 dB

27 dBm

44000 MHz

20000 MHz

85 Cel

-55 Cel

WIDE BAND MEDIUM POWER

HMC1049SCPZ-EP-R7 by Analog Devices

HMC1049SCPZ-EP-R7

Analog Devices

Analog Devices' HMC1049SCPZ-EP-R7 is a wide band low power RF amplifier with 10 dB gain and 18 dBm CW input power. Operating from -55 °C to 105°C, it covers frequencies from 300 MHz to 20 GHz. Ideal for RF and microwave applications requiring high performance in a compact component package.

50 ohm

COMPONENT

10 dB

18 dBm

20000 MHz

300 MHz

105 Cel

-55 Cel

WIDE BAND LOW POWER

HMC1022A-SX by Analog Devices

HMC1022A-SX

Analog Devices

Analog Devices' HMC1022A-SX is a wide band low power RF amplifier with 11.5 dB gain and 22 dBm CW input power. Operating from -55 °C to 85°C, it covers frequencies from 0 MHz to 48 GHz. Ideal for RF and microwave applications requiring high performance in a compact component design.

50 ohm

COMPONENT

11.5 dB

22 dBm

48000 MHz

0 MHz

85 Cel

-55 Cel

WIDE BAND LOW POWER

HMC1022ACHIPS by Analog Devices

HMC1022ACHIPS

Analog Devices

Analog Devices' HMC1022ACHIPS is a wide band low power RF amplifier with 11.5 dB gain and 22 dBm CW input power. Operating from -55 °C to 85°C, it covers frequencies from 0 MHz to 48 GHz. Ideal for RF and microwave applications requiring high performance in a compact component package.

50 ohm

COMPONENT

11.5 dB

22 dBm

48000 MHz

0 MHz

85 Cel

-55 Cel

WIDE BAND LOW POWER

HMC863ALC4TR-R5 by Analog Devices

HMC863ALC4TR-R5

Analog Devices

Analog Devices' HMC863ALC4TR-R5 is a wide band medium power RF amplifier with 20.5 dB gain, operating from 24-29.5 GHz. It can handle up to 26 dBm CW input power and has a VSWR of 7. Ideal for RF & microwave applications requiring high performance in temperatures ranging from -40 to 85°C.

50 ohm

COMPONENT

20.5 dB

26 dBm

e4

29500 MHz

24000 MHz

85 Cel

-40 Cel

WIDE BAND MEDIUM POWER

Gold (Au) - with Nickel (Ni) barrier

7

HMC863ALC4TR by Analog Devices

HMC863ALC4TR

Analog Devices

Analog Devices' HMC863ALC4TR is a wide band medium power RF amplifier with 20.5 dB gain, operating b/w 24-29.5 GHz. It can handle up to 26 dBm CW input power and has a VSWR of 7, making it ideal for high-frequency applications in RF and microwave systems.

50 ohm

COMPONENT

20.5 dB

26 dBm

e4

29500 MHz

24000 MHz

85 Cel

-40 Cel

WIDE BAND MEDIUM POWER

Gold (Au) - with Nickel (Ni) barrier

7

MAAL-011129-TR1000 by M/a-com Technology Solutions

MAAL-011129-TR1000

M/a-com Technology Solutions

MAAL-011129-TR1000 by M/a-com Technology Solutions is a wide band low power RF amplifier with 20 dB gain. It operates b/w 18-31.5 GHz, handling up to 10 dBm CW input power. Ideal for RF applications requiring high performance in temperatures ranging from -40 to 85°C.

50 ohm

COMPONENT

20 dB

10 dBm

e3

31500 MHz

18000 MHz

85 Cel

-40 Cel

WIDE BAND LOW POWER

Matte Tin (Sn)

ADL8111ACCZN by Analog Devices

ADL8111ACCZN

Analog Devices

ADL8111ACCZN by Analog Devices is a wide band low power RF amplifier with 10.6 dB gain, operating from 10 MHz to 8000 MHz. It can handle up to 20 dBm CW input power, making it suitable for various RF and microwave applications requiring high performance in temperatures ranging from -40°C to 85°C.

50 ohm

COMPONENT

10.6 dB

20 dBm

8000 MHz

10 MHz

85 Cel

-40 Cel

WIDE BAND LOW POWER

HMC8411TCPZ-EP-PT by Analog Devices

HMC8411TCPZ-EP-PT

Analog Devices

Analog Devices' HMC8411TCPZ-EP-PT is a wide band low power RF amplifier with 11 dB gain and 20 dBm CW input power. Operating from -55 to 125 °C, it covers frequencies from 10 MHz to 10 GHz. Ideal for RF and microwave applications requiring high performance in a compact component package.

50 ohm

COMPONENT

11 dB

20 dBm

10000 MHz

10 MHz

125 Cel

-55 Cel

WIDE BAND LOW POWER

ADPA7006CHIP by Analog Devices

ADPA7006CHIP

Analog Devices

ADPA7006CHIP by Analog Devices is a wide band medium power RF amplifier with 21 dB gain, operating from 18-44 GHz. It can handle up to 20 dBm CW input power and operates b/w -55°C to +85°C. Ideal for applications requiring high frequency amplification in RF & microwave systems.

50 ohm

COMPONENT

21 dB

20 dBm

44000 MHz

18000 MHz

85 Cel

-55 Cel

WIDE BAND MEDIUM POWER

HMC441LC3BTR-R5 by Analog Devices

HMC441LC3BTR-R5

Analog Devices

Analog Devices' HMC441LC3BTR-R5 is a wide band low power RF amplifier with 10 dB gain and 15 dBm max input power. Operating from 6-18 GHz, it's ideal for RF & microwave applications requiring high performance in temperatures ranging from -40 to 85°C.

50 ohm

COMPONENT

10 dB

15 dBm

e4

18000 MHz

6000 MHz

85 Cel

-40 Cel

WIDE BAND LOW POWER

GOLD OVER NICKEL

ADPA9002ACGZN-R7 by Analog Devices

ADPA9002ACGZN-R7

Analog Devices

ADPA9002ACGZN-R7 by Analog Devices is a wide band medium power RF amplifier with 13.5 dB gain, 25 dBm CW input power, and 50 ohm impedance. It operates from 0 to 10000 MHz, suitable for various RF & microwave applications requiring high performance amplification in temperatures ranging from -40 to 85 °C.

50 ohm

COMPONENT

13.5 dB

25 dBm

10000 MHz

0 MHz

85 Cel

-40 Cel

WIDE BAND MEDIUM POWER

7

ADPA9002ACGZN by Analog Devices

ADPA9002ACGZN

Analog Devices

ADPA9002ACGZN by Analog Devices is a wide band medium power RF amplifier with 13.5 dB gain, 25 dBm CW input power, and VSWR of 7. It operates from -40 to 85°C and covers frequencies from 0 to 10 GHz. Ideal for RF & microwave applications requiring high performance amplification in a compact form factor.

50 ohm

COMPONENT

13.5 dB

25 dBm

10000 MHz

0 MHz

85 Cel

-40 Cel

WIDE BAND MEDIUM POWER

7

ADPA7005AEHZ by Analog Devices

ADPA7005AEHZ

Analog Devices

ADPA7005AEHZ by Analog Devices is a wide band medium power RF amplifier with 12 dB gain. It operates b/w 18-44 GHz, handling up to 27 dBm CW input power. Ideal for applications requiring high frequency amplification in temperatures ranging from -40 to 85°C.

50 ohm

COMPONENT

12 dB

27 dBm

44000 MHz

18000 MHz

85 Cel

-40 Cel

WIDE BAND MEDIUM POWER

A3I20X050NR1 by NXP Semiconductors

A3I20X050NR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 7; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Characteristic Impedance: 50 ohm;

50 ohm

COMPONENT

28 dB

20 dBm

e3

SURFACE MOUNT

1

7

2200 MHz

1800 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

2.15/28

NARROW BAND HIGH POWER

LDMOS

TIN

ADPA7002AEHZ by Analog Devices

ADPA7002AEHZ

Analog Devices

ADPA7002AEHZ by Analog Devices is a wide band medium power RF amplifier with 12 dB gain. It operates b/w 20-44 GHz, handling up to 25 dBm CW input power. Ideal for applications requiring high-frequency amplification in temperatures ranging from -55°C to 85°C.

50 ohm

COMPONENT

12 dB

25 dBm

44000 MHz

20000 MHz

85 Cel

-55 Cel

WIDE BAND MEDIUM POWER

ADCA3992AMLZ by Analog Devices

ADCA3992AMLZ

Analog Devices

ADCA3992AMLZ by Analog Devices is a wide band high power RF module with 26.7 dB gain, operating from 45 MHz to 1218 MHz. It has a characteristic impedance of 75 ohm and requires a power supply of 34 V with max current draw of 550 mA. Ideal for applications requiring high-power amplification in RF and microwave systems.

75 ohm

MODULE

26.7 dB

PANEL MOUNT

1

8

1218 MHz

45 MHz

85 Cel

-30 Cel

SOT-115J

34

WIDE BAND HIGH POWER

550 mA

HYBRID

HMC1022A by Analog Devices

HMC1022A

Analog Devices

Analog Devices' HMC1022A is a GAAS RF amplifier with 1.08 VSWR, 9.5 dB gain, and 50 ohm impedance. Ideal for wideband medium power applications from 0 to 48000 MHz, it features surface mounting and requires a 10V power supply.

50 ohm

COMPONENT

9.5 dB

SURFACE MOUNT

1

8

48000 MHz

0 MHz

DIE OR CHIP

10

WIDE BAND MEDIUM POWER

GAAS

1.08

ADPA7007CHIP by Analog Devices

ADPA7007CHIP

Analog Devices

ADPA7007CHIP by Analog Devices is a PHEMT technology RF amplifier with 18 dB gain, operating from 18-44 GHz. It has a max input power of 18 dBm and requires a 5V power supply, drawing up to 1400 mA. Ideal for wide band medium power applications in RF & microwave systems.

50 ohm

COMPONENT

18 dB

18 dBm

SURFACE MOUNT

1

10

44000 MHz

18000 MHz

85 Cel

-55 Cel

DIE OR CHIP

5

WIDE BAND MEDIUM POWER

1400 mA

PHEMT

ADPA7006AEHZ-R7 by Analog Devices

ADPA7006AEHZ-R7

Analog Devices

ADPA7006AEHZ-R7 by Analog Devices is a wide band medium power RF amplifier with 20 dB gain, operating from 18-44 GHz. It has a max input power of 20 dBm and operates on a 5V power supply. Ideal for applications requiring high-frequency amplification in RF & microwave systems.

50 ohm

COMPONENT

20 dB

20 dBm

SURFACE MOUNT

1

16

44000 MHz

18000 MHz

85 Cel

-40 Cel

CERAMIC, METAL-SEALED COFIRED

5

WIDE BAND MEDIUM POWER

GAAS

ADPA7006AEHZ by Analog Devices

ADPA7006AEHZ

Analog Devices

ADPA7006AEHZ by Analog Devices is a RF & Microwave Amplifier with 20 dB gain, operating frequency range of 18-44 GHz. It has a max input power of 20 dBm and operates on a 5V power supply. Ideal for wide band medium power applications requiring high performance in surface mount configurations.

50 ohm

COMPONENT

20 dB

20 dBm

SURFACE MOUNT

1

16

44000 MHz

18000 MHz

85 Cel

-40 Cel

CERAMIC, METAL-SEALED COFIRED

5

WIDE BAND MEDIUM POWER

GAAS

CMPA801B025P by Wolfspeed

CMPA801B025P

Wolfspeed

RF/Microwave Amplifiers;

ADPA7007AEHZ-R7 by Analog Devices

ADPA7007AEHZ-R7

Analog Devices

ADPA7007AEHZ-R7 by Analog Devices is a wide band medium power RF amplifier with 18.5 dB gain, operating from 20-44 GHz. It features a max input power of 27 dBm and VSWR of 1.29, suitable for surface mount applications in RF & microwave systems requiring high performance amplification.

50 ohm

COMPONENT

18.5 dB

27 dBm

SURFACE MOUNT

1

18

44000 MHz

20000 MHz

85 Cel

-40 Cel

CERAMIC, METAL-SEALED COFIRED

5

WIDE BAND MEDIUM POWER

GAAS

1.29

ADPA7007AEHZ by Analog Devices

ADPA7007AEHZ

Analog Devices

ADPA7007AEHZ by Analog Devices is a RF amplifier with 27 dBm CW input power, 1.29 VSWR, and 18.5 dB gain. Ideal for wideband medium power applications in the frequency range of 20-44 GHz. Features GaAs technology, ceramic-metal package, and surface mounting option.

50 ohm

COMPONENT

18.5 dB

27 dBm

SURFACE MOUNT

1

18

44000 MHz

20000 MHz

85 Cel

-40 Cel

CERAMIC, METAL-SEALED COFIRED

5

WIDE BAND MEDIUM POWER

GAAS

1.29

MAAM-011252-DIE by M/a-com Technology Solutions

MAAM-011252-DIE

M/a-com Technology Solutions

MAAM-011252-DIE by M/a-com Technology Solutions is a wide band low power RF amplifier with 18 dB gain and 50 ohm impedance. It operates from 30 MHz to 8000 MHz, handling up to 24 dBm CW input power. Ideal for RF & microwave applications requiring high performance in compact designs.

50 ohm

COMPONENT

18 dB

24 dBm

SURFACE MOUNT

1

8

8000 MHz

30 MHz

85 Cel

-40 Cel

DIE OR CHIP

5

WIDE BAND LOW POWER

75 mA

1.67

ADL8104ACPZN by Analog Devices

ADL8104ACPZN

Analog Devices

ADL8104ACPZN by Analog Devices is a PHEMT RF amplifier with 10dB gain, 400-7500MHz frequency range, and 25dBm CW input power. Widely used in RF & microwave applications due to its wide band medium power capabilities and surface mounting feature.

50 ohm

COMPONENT

10 dB

25 dBm

SURFACE MOUNT

1

16

7500 MHz

400 MHz

85 Cel

-40 Cel

LCC16,.12SQ,20

5

WIDE BAND MEDIUM POWER

PHEMT

1.58

ADL8104ACPZN-R7 by Analog Devices

ADL8104ACPZN-R7

Analog Devices

ADL8104ACPZN-R7 by Analog Devices is a PHEMT RF amplifier with 10 dB gain, operating from 400 MHz to 7500 MHz. It has a max input power of 25 dBm and VSWR of 1.58, suitable for wideband medium-power applications. With a compact surface-mount construction and operating temperatures from -40 °C to 85°C, it's ideal for RF and microwave systems.

50 ohm

COMPONENT

10 dB

25 dBm

SURFACE MOUNT

1

16

7500 MHz

400 MHz

85 Cel

-40 Cel

LCC16,.12SQ,20

5

WIDE BAND MEDIUM POWER

PHEMT

1.58

ADPA1105ACGZN by Analog Devices

ADPA1105ACGZN

Analog Devices

ADPA1105ACGZN by Analog Devices is a GAN RF amplifier with 30.5 dB gain, operating from 900 MHz to 1600 MHz. It has a max input power of 30 dBm and VSWR of 1.5, suitable for narrowband high-power applications in RF & microwave systems. With surface mounting feature and operating temperatures from -40°C to 85°C, it offers reliable performance in various environments.

50 ohm

COMPONENT

30.5 dB

30 dBm

e4

SURFACE MOUNT

1

32

1600 MHz

900 MHz

85 Cel

-40 Cel

LCC32,.2SQ,20

50

NARROW BAND HIGH POWER

GAN

NICKEL PALLADIUM GOLD

1.5

ADPA1105ACGZN-R7 by Analog Devices

ADPA1105ACGZN-R7

Analog Devices

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Technology: GAN; Characteristic Impedance: 50 ohm; Maximum Input Power (CW): 30 dBm;

50 ohm

COMPONENT

30.5 dB

30 dBm

e4

SURFACE MOUNT

1

32

1600 MHz

900 MHz

85 Cel

-40 Cel

LCC32,.2SQ,20

50

NARROW BAND HIGH POWER

GAN

NICKEL PALLADIUM GOLD

1.5

AFSC5G40E38T2 by NXP Semiconductors

AFSC5G40E38T2

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 26; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Power Supplies (V): 28;

50 ohm

COMPONENT

27.1 dB

SURFACE MOUNT

1

26

4000 MHz

3700 MHz

125 Cel

PLASTIC/EPOXY

LCC26,.24X.4,40

28

NARROW BAND HIGH POWER

LDMOS

AFSC5G35E38T2 by NXP Semiconductors

AFSC5G35E38T2

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 26; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Package Equivalence Code: LCC26,.24X.4,40;

50 ohm

COMPONENT

29.3 dB

e4

SURFACE MOUNT

1

26

3700 MHz

3400 MHz

125 Cel

PLASTIC/EPOXY

LCC26,.24X.4,40

30

NARROW BAND HIGH POWER

LDMOS

NICKEL PALLADIUM GOLD

ADCA3952AMLZ by Analog Devices

ADCA3952AMLZ

Analog Devices

ADCA3952AMLZ by Analog Devices is a wide band high power RF amplifier with 25 dB gain and max input power of 75 dBm. Operating from 45 MHz to 1218 MHz, it has a construction as a module with PHEMT technology. Ideal for applications requiring high power amplification in RF and microwave systems.

75 ohm

MODULE

25 dB

75 dBm

PANEL MOUNT

1

8

1218 MHz

45 MHz

85 Cel

-30 Cel

24

WIDE BAND HIGH POWER

490 mA

PHEMT

A3M35TL039T2 by NXP Semiconductors

A3M35TL039T2

NXP Semiconductors

NXP Semiconductors A3M35TL039T2 is a 26V LDMOS RF amplifier with 26 terminals, operating from 3300-3700 MHz. It offers 26.5 dB gain and is ideal for narrowband high-power applications at temperatures up to 125°C. This surface-mount component has a characteristic impedance of 50 ohms, making it suitable for various RF and microwave systems.

I/P POWER-MAX (PEAK)=25DBM

50 ohm

COMPONENT

26.5 dB

SURFACE MOUNT

1

26

3700 MHz

3300 MHz

125 Cel

PLASTIC/EPOXY

LCC26,.24X.4,40

26

NARROW BAND HIGH POWER

LDMOS

A3M37TL039T2 by NXP Semiconductors

A3M37TL039T2

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 26; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Construction: COMPONENT;

I/P POWER-MAX (PEAK)=25DBM

50 ohm

COMPONENT

26.1 dB

e4

SURFACE MOUNT

1

26

3800 MHz

3600 MHz

125 Cel

PLASTIC/EPOXY

LCC26,.24X.4,40

26

NARROW BAND HIGH POWER

LDMOS

NICKEL PALLADIUM GOLD

ADCA3950AMLZ by Analog Devices

ADCA3950AMLZ

Analog Devices

ADCA3950AMLZ by Analog Devices is a wide band high power RF amplifier with 25 dB gain, operating from 45 MHz to 1218 MHz. It has a max input power of 75 dBm and operates on a 24V supply with a max current draw of 490 mA. Ideal for applications requiring high power amplification in RF and microwave systems.

75 ohm

MODULE

25 dB

75 dBm

PANEL MOUNT

1

7

1218 MHz

45 MHz

85 Cel

-30 Cel

24

WIDE BAND HIGH POWER

490 mA

PHEMT

ADL9005ACPZN-R7 by Analog Devices

ADL9005ACPZN-R7

Analog Devices

ADL9005ACPZN-R7 by Analog Devices is a wide band low power RF amplifier with 17 dB gain and 1.49 VSWR. Operating from 10 MHz to 26.5 GHz, it has a max input power of 22 dBm and operates on a 5V supply. Ideal for RF and microwave applications requiring high performance in a compact surface mount package.

50 ohm

COMPONENT

17 dB

22 dBm

SURFACE MOUNT

1

24

26500 MHz

10 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC24,.16SQ,20

5

WIDE BAND LOW POWER

PHEMT

1.49

MAAM-011290-DIE by M/a-com Technology Solutions

MAAM-011290-DIE

M/a-com Technology Solutions

MAAM-011290-DIE by M/a-com Technology Solutions is a wide band medium power RF amplifier with 16.5 dB gain, operating from 5-20 GHz. It has a max input power of 10 dBm and VSWR of 1.58, suitable for surface mount applications in RF & microwave systems.

50 ohm

COMPONENT

16.5 dB

10 dBm

SURFACE MOUNT

1

8

20000 MHz

5000 MHz

85 Cel

-40 Cel

DIE OR CHIP

5

WIDE BAND MEDIUM POWER

140 mA

1.58

HMC717ALP3ETR by Analog Devices

HMC717ALP3ETR

Analog Devices

HMC717ALP3ETR by Analog Devices is a wide band low power RF amplifier with a gain of 11 dB. It operates at frequencies ranging from 4800 MHz to 6000 MHz and can handle a max input power of 20 dBm. This component, made of plastic/epoxy, is suitable for surface mount applications in the RF and microwave field.

50 ohm

COMPONENT

11 dB

20 dBm

e3

SURFACE MOUNT

1

16

6000 MHz

4800 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC12,.12SQ,20

3/5

WIDE BAND LOW POWER

100 mA

PHEMT

Matte Tin (Sn) - annealed

1.43

AFSC5G23E37T2 by NXP Semiconductors

AFSC5G23E37T2

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 26; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Maximum Operating Frequency: 2400 MHz;

I/P POWER-MAX (PEAK)=25DBM

50 ohm

COMPONENT

32 dB

SURFACE MOUNT

1

26

2400 MHz

2300 MHz

125 Cel

PLASTIC/EPOXY

LCC26,.24X.4,20

28

NARROW BAND HIGH POWER

LDMOS