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HMC8415LP6GETR

Analog Devices

HMC8415LP6GETR by Analog Devices

Analog Devices' HMC8415LP6GETR is a wideband high-power RF amplifier with 25.5 dB gain, operating from 9-10.5 GHz. It can handle up to 30 dBm CW input power and operates in temperatures ranging from -40 °C to 85°C. Ideal for RF and microwave applications requiring high power amplification in a compact component design.

Median Price

$624.007

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 100 parts In-Stock

1+ parts

-

100+ parts

$624.007

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-

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100

-

$624.007

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,544 parts In-Stock

1+ parts

-

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3,544

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Digiode

USA . 36 parts In-Stock

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36

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,358 parts In-Stock

1+ parts

$1.838

100+ parts

-

1k+ parts

$1.709

10k+ parts

-

2,358

$1.838

-

$1.709

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IDEA Electronic Components Group

UK . 453 parts In-Stock

1+ parts

$1.976

100+ parts

-

1k+ parts

$1.877

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-

453

$1.976

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$1.877

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DigiPath Technology Company

USA . 2,299 parts In-Stock

1+ parts

$3.083

100+ parts

$2.959

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-

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2,299

$3.083

$2.959

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Semicontronic

India . 301 parts In-Stock

1+ parts

$4.000

100+ parts

$3.900

1k+ parts

$3.880

10k+ parts

-

301

$4.000

$3.900

$3.880

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AZTECH Wire

Italy . 451 parts In-Stock

1+ parts

$8.354

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451

$8.354

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One Stop Electronics

USA . 441 parts In-Stock

1+ parts

$21.000

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441

$21.000

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Ampacity Inc.

Singapore . 167 parts In-Stock

1+ parts

$30.000

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167

$30.000

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Corphita

USA . 308 parts In-Stock

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308

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Overview

Elevate your RF and microwave amplifier game with the HMC8415LP6GETR from Analog Devices. Known for their top-notch quality and reliability, Analog Devices delivers cutting-edge solutions for a wide range of applications. With a maximum input power of 30 dBm and a gain of 25.5 dB, this wideband high-power device offers unparalleled performance in extreme temperatures. Whether you're in the aerospace, defense, or telecommunications industry, this component ensures optimal signal integrity and efficiency. Trust Analog Devices to provide you with the best-in-class technology that empowers your projects to reach new heights.

Feature Benefit Bullets

Maximum Input Power (CW): 30 dBm

With a high maximum input power of 30 dBm, this amplifier can handle high power signals without distortion, making it suitable for demanding RF and microwave applications.

Construction: COMPONENT

Being a component-based amplifier allows for easy integration into existing systems, providing flexibility and customization options.

Maximum Operating Temperature: 85 °C

The wide operating temperature range of up to 85 °C ensures reliable performance even in extreme environmental conditions.

Minimum Operating Temperature: -40 °C

The ability to operate at temperatures as low as -40 °C makes this amplifier suitable for outdoor and harsh environments.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides good solderability and corrosion resistance, ensuring a reliable electrical connection.

RF or Microwave Device Type: WIDE BAND HIGH POWER

As a wide band high power amplifier, this product offers a broad frequency range and high gain, making it versatile for various applications requiring high power outputs.

Characteristic Impedance: 50 ohm

The standard 50 ohm impedance allows for easy matching with other RF components, ensuring efficient signal transfer and minimal signal loss.

Gain: 25.5 dB

A high gain of 25.5 dB amplifies the input signal significantly, providing a strong output signal for better system performance.

Minimum Operating Frequency: 9000 MHz

With a low minimum operating frequency of 9000 MHz, this amplifier is suitable for applications requiring amplification at lower frequencies.

Maximum Operating Frequency: 10500 MHz

The high maximum operating frequency of 10500 MHz makes this amplifier ideal for applications that require amplification at higher frequencies.

Technical Specifications

RF & Microwave Amplifiers HMC8415LP6GETR attributes and parameters. Explore more RF & Microwave Amplifiers devices from Analog Devices

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

25.5 dB

Maximum Input Power (CW):

30 dBm

JESD-609 Code:

e3

Maximum Operating Frequency:

10500 MHz

Minimum Operating Frequency:

9000 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

RF or Microwave Device Type:

Terminal Finish:

MATTE TIN

Trade Compliance

HMC8415LP6GETR RF & Microwave trade compliance attributes, and parameters.

ECCN

3A001.B.2.B.2

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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