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RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.

RF & Microwave Amplifiers

Available Parts 644

Part# Info Specs
Part RoHS Manufacturer Description Additional Features Characteristic Impedance Construction Gain Maximum Input Power (CW) JESD-609 Code Mounting Feature No. of Functions No. of Terminals Maximum Operating Frequency Minimum Operating Frequency Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Equivalence Code Power Supplies (V) RF or Microwave Device Type Screening Level Sub-Category Maximum Supply Current Maximum Supply Voltage Technology Terminal Finish Maximum Voltage Standing Wave Ratio
HMC907APM5E by Analog Devices

HMC907APM5E

Analog Devices

HMC907APM5E by Analog Devices is a wide band medium power RF amplifier with 12 dB gain and 25 dBm max input power. It operates from 200 MHz to 22 GHz, has a VSWR of 7, and requires a 10V supply. Ideal for RF & microwave applications requiring high performance in plastic/epoxy package.

50 ohm

COMPONENT

12 dB

25 dBm

SURFACE MOUNT

1

32

22000 MHz

200 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC32,.2SQ,20

10

WIDE BAND MEDIUM POWER

430 mA

7

HMC907A by Analog Devices

HMC907A

Analog Devices

HMC907A by Analog Devices is a RF & Microwave Amplifier with 25 dBm CW input power, 7 VSWR, and 12.5 dB gain. Ideal for wide band medium power applications, it operates from -55°C to 85°C within the frequency range of 200 MHz to 22 GHz.

50 ohm

COMPONENT

12.5 dB

25 dBm

22000 MHz

200 MHz

85 Cel

-55 Cel

WIDE BAND MEDIUM POWER

7

HMC994APM5E by Analog Devices

HMC994APM5E

Analog Devices

Analog Devices' HMC994APM5E is a wide band medium power RF amplifier with 13 dB gain and 25 dBm CW input power. With a VSWR of 7, it operates from -40°C to 85°C, covering frequencies from 0 MHz to 28 GHz. Ideal for RF and microwave applications requiring high performance amplification in various environments.

50 ohm

COMPONENT

13 dB

25 dBm

28000 MHz

0 MHz

85 Cel

-40 Cel

WIDE BAND MEDIUM POWER

7

HMC994A by Analog Devices

HMC994A

Analog Devices

Analog Devices' HMC994A is a wide band medium power RF amplifier with 12.5 dB gain, handling up to 25 dBm CW input power. With a VSWR of 7, it operates from -55°C to 85°C, making it ideal for various RF and microwave applications up to 30 GHz.

50 ohm

COMPONENT

12.5 dB

25 dBm

30000 MHz

0 MHz

85 Cel

-55 Cel

WIDE BAND MEDIUM POWER

7

HMC998APM5E by Analog Devices

HMC998APM5E

Analog Devices

HMC998APM5E by Analog Devices is a wide band medium power RF amplifier with 13 dB gain and 27 dBm max input power. It operates from 0 to 22000 MHz, suitable for various RF applications. With a VSWR of 7, it offers reliable performance in temperatures ranging from -40 to 85°C.

50 ohm

COMPONENT

13 dB

27 dBm

e4

22000 MHz

0 MHz

85 Cel

-40 Cel

WIDE BAND MEDIUM POWER

NICKEL PALLADIUM GOLD

7

HMC5805LS6TR by Analog Devices

HMC5805LS6TR

Analog Devices

Analog Devices' HMC5805LS6TR is a GAAS RF amplifier with 13.5 dB gain, operating up to 40 GHz. With a max input power of 17 dBm and VSWR of 7, it's ideal for wideband low-power applications in RF & microwave systems requiring high-frequency amplification. The ceramic package and surface-mounting feature make it suitable for various environments, from -40 °C to 85°C.

50 ohm

COMPONENT

13.5 dB

17 dBm

SURFACE MOUNT

1

16

40000 MHz

85 Cel

-40 Cel

CERAMIC

LCC16,.24SQ,40/32

10

WIDE BAND LOW POWER

GAAS

7

HMC7885FH18 by Analog Devices

HMC7885FH18

Analog Devices

Analog Devices' HMC7885FH18 is a wide band high power RF module with 21 dB gain, operating from 2-6 GHz. It can handle up to 36 dBm CW input power and has a VSWR of 2. Ideal for applications requiring high power amplification in the RF & Microwave domain.

50 ohm

MODULE

21 dB

36 dBm

6000 MHz

2000 MHz

60 Cel

-30 Cel

WIDE BAND HIGH POWER

2

ADL7003CHIPS-SX by Analog Devices

ADL7003CHIPS-SX

Analog Devices

ADL7003CHIPS-SX by Analog Devices is a wide band low power RF amplifier with 11 dB gain, operating from 50-95 GHz. It can handle up to 15 dBm CW input power and operates in temperatures ranging from -55°C to 85°C. Ideal for applications requiring high frequency amplification in RF & microwave systems.

50 ohm

COMPONENT

11 dB

15 dBm

95000 MHz

50000 MHz

85 Cel

-55 Cel

WIDE BAND LOW POWER

ADL7003CHIPS by Analog Devices

ADL7003CHIPS

Analog Devices

ADL7003CHIPS by Analog Devices is a wide band low power RF amplifier with 11 dB gain. It operates b/w 50-95 GHz, handling up to 15 dBm CW input power. Ideal for applications requiring high frequency amplification in RF & microwave systems.

50 ohm

COMPONENT

11 dB

15 dBm

95000 MHz

50000 MHz

85 Cel

-55 Cel

WIDE BAND LOW POWER

HMC8325-SX by Analog Devices

HMC8325-SX

Analog Devices

Analog Devices' HMC8325-SX is a PHEMT RF amplifier with 22 terminals, operating from 71-86 GHz. It offers a gain of 19.5 dB and requires a 3V power supply, drawing a max current of 50 mA. Ideal for wideband low-power applications in RF and microwave systems.

50 ohm

COMPONENT

19.5 dB

SURFACE MOUNT

1

22

86000 MHz

71000 MHz

85 Cel

-55 Cel

DIE OR CHIP

3

WIDE BAND LOW POWER

50 mA

PHEMT

HMC8325 by Analog Devices

HMC8325

Analog Devices

HMC8325 by Analog Devices is a PHEMT RF amplifier with 19.5 dB gain, operating b/w 71-86 GHz. It has 22 terminals, requires 3V power supply at max current of 50 mA. Ideal for wideband low-power applications in RF & microwave systems due to its surface mount construction and characteristic impedance of 50 ohms.

50 ohm

COMPONENT

19.5 dB

SURFACE MOUNT

1

22

86000 MHz

71000 MHz

85 Cel

-55 Cel

DIE OR CHIP

3

WIDE BAND LOW POWER

50 mA

PHEMT

HMC8205BF10 by Analog Devices

HMC8205BF10

Analog Devices

Analog Devices' HMC8205BF10 is a wideband high-power RF amplifier with 25 dB gain and 35 dBm CW input power. Operating from 300 MHz to 6 GHz, it features a characteristic impedance of 50 ohms. Ideal for applications requiring high-power amplification in RF and microwave systems.

50 ohm

COMPONENT

25 dB

35 dBm

e4

6000 MHz

300 MHz

85 Cel

-40 Cel

WIDE BAND HIGH POWER

GOLD OVER NICKEL

HMC618ALP3E by Analog Devices

HMC618ALP3E

Analog Devices

HMC618ALP3E by Analog Devices is a PHEMT RF amplifier with 12.5 dB gain, operating b/w 1200-2200 MHz. It has a max input power of 10 dBm and requires a 5V power supply, making it ideal for narrowband low-power applications in RF and microwave systems. The component is housed in a plastic/epoxy package with surface mounting feature, suitable for temperatures ranging from -40 to 85°C.

50 ohm

COMPONENT

12.5 dB

10 dBm

e3

SURFACE MOUNT

1

16

2200 MHz

1200 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC16,.12SQ,20

5

NARROW BAND LOW POWER

65 mA

PHEMT

MATTE TIN

HMC907APM5ETR by Analog Devices

HMC907APM5ETR

Analog Devices

HMC907APM5ETR by Analog Devices is a RF & Microwave Amplifier with 25 dBm CW input power, 7 VSWR, and 12 dB gain. Ideal for wide band medium power applications, it operates from -40 to 85°C with a frequency range of 200 MHz to 22 GHz.

50 ohm

COMPONENT

12 dB

25 dBm

SURFACE MOUNT

1

32

22000 MHz

200 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC32,.2SQ,20

10

WIDE BAND MEDIUM POWER

430 mA

7

BGA614E6327HTSA1 by Infineon Technologies

BGA614E6327HTSA1

Infineon Technologies

WIDE BAND LOW POWER; Minimum Operating Frequency: 0 MHz; Minimum Operating Temperature: -65 Cel; Construction: COMPONENT; Characteristic Impedance: 50 ohm; Maximum Operating Temperature: 150 Cel;

50 ohm

COMPONENT

17.5 dB

10 dBm

2400 MHz

0 MHz

150 Cel

-65 Cel

WIDE BAND LOW POWER

PTMA080152MV1AUMA1 by Infineon Technologies

PTMA080152MV1AUMA1

Infineon Technologies

Infineon's PTMA080152MV1AUMA1 is a wide band high power RF amplifier with 29 dB gain, 42 dBm CW input power, and VSWR of 10. Ideal for applications requiring amplification in the frequency range of 700-1000 MHz.

50 ohm

COMPONENT

29 dB

42 dBm

e3

1000 MHz

700 MHz

WIDE BAND HIGH POWER

Tin (Sn)

10

PTMA210452ELV1XWSA1 by Infineon Technologies

PTMA210452ELV1XWSA1

Infineon Technologies

NARROW BAND HIGH POWER; Maximum Input Power (CW): 25 dBm; Construction: MODULE; Gain: 26.5 dB; Minimum Operating Frequency: 1900 MHz; Characteristic Impedance: 50 ohm;

50 ohm

MODULE

26.5 dB

25 dBm

2200 MHz

1900 MHz

NARROW BAND HIGH POWER

10

BGA748N16E6327 by Infineon Technologies

BGA748N16E6327

Infineon Technologies

NARROW BAND LOW POWER; Characteristic Impedance: 50 ohm; Minimum Operating Frequency: 2110 MHz; Gain: 18 dB; Additional Features: LOW NOISE, IT CAN ALSO OPERATE AT 925-960 MHZ,1930-1990 MHZ AND 2110-2170 MHZ; Minimum Operating Temperature: -30 Cel;

LOW NOISE, IT CAN ALSO OPERATE AT 925-960 MHZ,1930-1990 MHZ AND 2110-2170 MHZ

50 ohm

COMPONENT

18 dB

4 dBm

2170 MHz

2110 MHz

85 Cel

-30 Cel

NARROW BAND LOW POWER

HMC1049-SX by Analog Devices

HMC1049-SX

Analog Devices

Analog Devices' HMC1049-SX is a wide band low power RF amplifier with 11 dB gain and 18 dBm CW input power. Operating from 300 MHz to 20 GHz, it's ideal for RF & microwave applications requiring components with a characteristic impedance of 50 ohms. Temperature range: -55 °C to +85°C.

50 ohm

COMPONENT

11 dB

18 dBm

20000 MHz

300 MHz

85 Cel

-55 Cel

WIDE BAND LOW POWER

HMC565LC5TR-R5 by Analog Devices

HMC565LC5TR-R5

Analog Devices

Analog Devices' HMC565LC5TR-R5 is a wide band low power RF amplifier with 16 dB gain, operating from 6-20 GHz. It can handle up to 10 dBm CW input power and operates b/w -40°C to +85°C. Ideal for applications requiring high frequency amplification in RF & microwave systems.

50 ohm

COMPONENT

16 dB

10 dBm

20000 MHz

6000 MHz

85 Cel

-40 Cel

WIDE BAND LOW POWER

HMC637BPM5E by Analog Devices

HMC637BPM5E

Analog Devices

Analog Devices' HMC637BPM5E is a GAAS RF amplifier with 12.5 dB gain, operating from 0 to 7500 MHz. It has a max input power of 25 dBm and VSWR of 7, suitable for wideband medium-power applications in RF & microwave systems. With a compact surface-mount construction and operating temperatures from -55°C to 85°C, it offers reliable performance in various environments.

50 ohm

COMPONENT

12.5 dB

25 dBm

e4

SURFACE MOUNT

1

32

7500 MHz

0 MHz

85 Cel

-55 Cel

LCC32,.2SQ,20

12

WIDE BAND MEDIUM POWER

GAAS

Nickel/Palladium/Gold (Ni/Pd/Au)

7

HMC788ACPSZ-EP-PT by Analog Devices

HMC788ACPSZ-EP-PT

Analog Devices

Analog Devices' HMC788ACPSZ-EP-PT is a wide band low power RF amplifier with 9 dB gain, 10-10000 MHz frequency range, and 20 dBm CW input power. Ideal for RF & microwave applications requiring high performance in temperatures ranging from -55 to 105°C.

50 ohm

COMPONENT

9 dB

20 dBm

e4

10000 MHz

10 MHz

105 Cel

-55 Cel

WIDE BAND LOW POWER

NICKEL PALLADIUM GOLD

HMC788ACPSZ-EP-R7 by Analog Devices

HMC788ACPSZ-EP-R7

Analog Devices

Analog Devices' HMC788ACPSZ-EP-R7 is a wide band low power RF amplifier with 9 dB gain and 20 dBm CW input power. It operates from 10 MHz to 10 GHz, suitable for RF applications requiring high performance in extreme temperatures (-55 °C to 105°C).

50 ohm

COMPONENT

9 dB

20 dBm

e4

10000 MHz

10 MHz

105 Cel

-55 Cel

WIDE BAND LOW POWER

NICKEL PALLADIUM GOLD

HMC902-SX by Analog Devices

HMC902-SX

Analog Devices

Analog Devices' HMC902-SX is a wide band low power RF amplifier with 17 dB gain, operating from 5-11 GHz. With a max input power of 10 dBm and temperature range of -55 to 85 °C, it's ideal for RF & microwave applications requiring high performance in harsh environments.

50 ohm

COMPONENT

17 dB

10 dBm

11000 MHz

5000 MHz

85 Cel

-55 Cel

WIDE BAND LOW POWER

HMC906A by Analog Devices

HMC906A

Analog Devices

WIDE BAND MEDIUM POWER; Characteristic Impedance: 50 ohm; Gain: 25 dB; Minimum Operating Temperature: -55 Cel; Maximum Input Power (CW): 20 dBm; Minimum Operating Frequency: 27300 MHz;

50 ohm

COMPONENT

25 dB

20 dBm

33500 MHz

27300 MHz

85 Cel

-55 Cel

WIDE BAND MEDIUM POWER

HMC1126-SX by Analog Devices

HMC1126-SX

Analog Devices

WIDE BAND LOW POWER; Characteristic Impedance: 50 ohm; Minimum Operating Frequency: 2000 MHz; Maximum Input Power (CW): 22 dBm; Minimum Operating Temperature: -55 Cel; Maximum Operating Temperature: 85 Cel;

50 ohm

COMPONENT

8 dB

22 dBm

50000 MHz

2000 MHz

85 Cel

-55 Cel

WIDE BAND LOW POWER

HMC564LC4TR-R5 by Analog Devices

HMC564LC4TR-R5

Analog Devices

Analog Devices' HMC564LC4TR-R5 is a wide band low power RF amplifier with 14 dB gain and 20 dBm CW input power. Operating from -40 to 85°C, it covers frequencies from 7-14 GHz. Ideal for RF & microwave applications requiring high performance in a compact component package.

50 ohm

COMPONENT

14 dB

20 dBm

14000 MHz

7000 MHz

85 Cel

-40 Cel

WIDE BAND LOW POWER

HMC606LC5TR-R5 by Analog Devices

HMC606LC5TR-R5

Analog Devices

Analog Devices' HMC606LC5TR-R5 is a wide band low power RF amplifier with 9.5 dB gain, suitable for frequencies ranging from 2-18 GHz. It can handle up to 15 dBm CW input power and operates in temperatures from -40 to 85°C. Ideal for RF and microwave applications requiring high performance in a compact component design.

50 ohm

COMPONENT

9.5 dB

15 dBm

18000 MHz

2000 MHz

85 Cel

-40 Cel

WIDE BAND LOW POWER

HMC903-SX by Analog Devices

HMC903-SX

Analog Devices

Analog Devices' HMC903-SX is a wide band low power RF amplifier with 17 dB gain and 50 ohm impedance. It operates from 6-18 GHz, handles up to 20 dBm CW input power, and can be used in various RF & microwave applications.

50 ohm

COMPONENT

17 dB

20 dBm

18000 MHz

6000 MHz

85 Cel

-55 Cel

WIDE BAND LOW POWER

HMC637BPM5ETR by Analog Devices

HMC637BPM5ETR

Analog Devices

Analog Devices' HMC637BPM5ETR is a GAAS RF amplifier with 12.5 dB gain, 50 ohm impedance, and 25 dBm CW input power. It operates from 0 to 7500 MHz, suitable for wideband medium-power applications in RF & microwave systems. With a compact surface-mount design and high VSWR tolerance of 7, it's ideal for various communication and radar systems.

50 ohm

COMPONENT

12.5 dB

25 dBm

e4

SURFACE MOUNT

1

32

7500 MHz

0 MHz

85 Cel

-55 Cel

LCC32,.2SQ,20

12

WIDE BAND MEDIUM POWER

GAAS

Nickel/Palladium/Gold (Ni/Pd/Au)

7

MMZ25332B4T1 by NXP Semiconductors

MMZ25332B4T1

NXP Semiconductors

NXP Semiconductors' MMZ25332B4T1 is a wide band medium power RF amplifier with 23.5 dB gain, operating from 1500 MHz to 2700 MHz. It has a max input power of 30 dBm and requires a 5V power supply, making it suitable for various RF and microwave applications. The component features a hybrid technology construction in a surface mount package with 24 terminals.

50 ohm

COMPONENT

23.5 dB

30 dBm

e3

SURFACE MOUNT

1

24

2700 MHz

1500 MHz

PLASTIC/EPOXY

LCC24,.16SQ,20

5

WIDE BAND MEDIUM POWER

415 mA

HYBRID

TIN

MAAL-011129-TR3000 by M/a-com Technology Solutions

MAAL-011129-TR3000

M/a-com Technology Solutions

MAAL-011129-TR3000 by M/a-com Technology Solutions is a wide band low power RF amplifier with 20 dB gain. It operates b/w 18-31.5 GHz, handling up to 10 dBm CW input power. Ideal for RF applications requiring high performance in temperature range of -40 to 85°C.

50 ohm

COMPONENT

20 dB

10 dBm

e3

31500 MHz

18000 MHz

85 Cel

-40 Cel

WIDE BAND LOW POWER

Matte Tin (Sn)

HMC1040CHIPS by Analog Devices

HMC1040CHIPS

Analog Devices

Analog Devices' HMC1040CHIPS is a wide band low power RF amplifier with 19 dB gain, suitable for frequencies ranging from 20-44 GHz. It can handle up to 5 dBm CW input power and operates in temperatures from -55 to 85°C. Ideal for RF and microwave applications requiring high performance amplification.

50 ohm

COMPONENT

19 dB

5 dBm

44000 MHz

20000 MHz

85 Cel

-55 Cel

WIDE BAND LOW POWER

ADMV7710CHIPS by Analog Devices

ADMV7710CHIPS

Analog Devices

Analog Devices' ADMV7710CHIPS is a wide band medium power RF amplifier with 21 dB gain, operating from 71-76 GHz. Ideal for applications requiring high-frequency amplification in temperatures ranging from -55 to 85 °C.

50 ohm

COMPONENT

21 dB

76000 MHz

71000 MHz

85 Cel

-55 Cel

WIDE BAND MEDIUM POWER

ADMV7810CHIPS by Analog Devices

ADMV7810CHIPS

Analog Devices

Analog Devices' ADMV7810CHIPS is a wide band medium power RF amplifier with 18 dB gain. Operating from -55 °C to 85°C, it covers frequencies from 81-86 GHz. Ideal for RF & microwave applications requiring high performance in a compact component form factor.

50 ohm

COMPONENT

18 dB

86000 MHz

81000 MHz

85 Cel

-55 Cel

WIDE BAND MEDIUM POWER

AFIC31025NR1 by NXP Semiconductors

AFIC31025NR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 17; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; No. of Functions: 2;

50 ohm

COMPONENT

30.5 dB

20 dBm

e3

SURFACE MOUNT

2

17

3100 MHz

2400 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

28

NARROW BAND HIGH POWER

LDMOS

TIN

10

MMZ38333BT1 by NXP Semiconductors

MMZ38333BT1

NXP Semiconductors

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Power Supplies (V): 5;

50 ohm

COMPONENT

36.3 dB

30 dBm

e3

SURFACE MOUNT

1

24

3800 MHz

3400 MHz

PLASTIC/EPOXY

LCC24,.16SQ,20

5

NARROW BAND LOW POWER

1200 mA

HYBRID

TIN

1.58

HMC1099PM5ETR by Analog Devices

HMC1099PM5ETR

Analog Devices

HMC1099PM5ETR by Analog Devices is a GAN technology RF amplifier with 16.5 dB gain, operating from 10 MHz to 1100 MHz. It has a max input power of 33 dBm and VSWR of 6, suitable for wideband high-power applications in RF and microwave systems. The component is housed in a plastic/epoxy package with 32 terminals, designed for surface mount installation at temperatures ranging from -40°C to 85°C.

50 ohm

COMPONENT

16.5 dB

33 dBm

SURFACE MOUNT

1

32

1100 MHz

10 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC32,.2SQ,20

28

WIDE BAND HIGH POWER

100 mA

GAN

6

HMC1099PM5E by Analog Devices

HMC1099PM5E

Analog Devices

HMC1099PM5E by Analog Devices is a GAN technology RF amplifier with 16.5 dB gain, operating from 10 MHz to 1100 MHz. It has a max input power of 33 dBm and VSWR of 6, suitable for wideband high-power applications in temperatures ranging from -40°C to 85°C. The component features a plastic/epoxy package body material and surface mounting feature.

50 ohm

COMPONENT

16.5 dB

33 dBm

SURFACE MOUNT

1

32

1100 MHz

10 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC32,.2SQ,20

28

WIDE BAND HIGH POWER

100 mA

GAN

6

HMC8500PM5ETR by Analog Devices

HMC8500PM5ETR

Analog Devices

Analog Devices' HMC8500PM5ETR is a GaN wide band high power RF amplifier with 12 dB gain, operating from 10 MHz to 2800 MHz. It has a max input power of 33 dBm and VSWR of 6, suitable for applications requiring high power amplification in RF and microwave systems. The component is housed in a plastic/epoxy package with 32 terminals, designed for surface mount installation at temperatures ranging from -40°C to 85°C.

50 ohm

COMPONENT

12 dB

33 dBm

e4

SURFACE MOUNT

1

32

2800 MHz

10 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC32,.2SQ,20

28

WIDE BAND HIGH POWER

100 mA

GAN

NICKEL PALLADIUM GOLD

6

HMC8500PM5E by Analog Devices

HMC8500PM5E

Analog Devices

Analog Devices' HMC8500PM5E is a GAN RF amplifier with 12dB gain, operating from 10MHz to 2800MHz. It has a max input power of 33dBm and VSWR of 6, suitable for wideband high-power applications. The component features a plastic/epoxy package, surface mounting, and operates at temperatures ranging from -40°C to 85°C.

50 ohm

COMPONENT

12 dB

33 dBm

e4

SURFACE MOUNT

1

32

2800 MHz

10 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC32,.2SQ,20

28

WIDE BAND HIGH POWER

100 mA

GAN

NICKEL PALLADIUM GOLD

6

HMC943APM5ETR by Analog Devices

HMC943APM5ETR

Analog Devices

HMC943APM5ETR by Analog Devices is a wide band medium power RF amplifier with 20.5 dB gain, operating from 24-34 GHz. It can handle up to 20 dBm CW input power and has a max VSWR of 7. Ideal for applications requiring high frequency amplification in RF & microwave systems.

50 ohm

COMPONENT

20.5 dB

20 dBm

34000 MHz

24000 MHz

85 Cel

-40 Cel

WIDE BAND MEDIUM POWER

7

HMC943APM5E by Analog Devices

HMC943APM5E

Analog Devices

HMC943APM5E by Analog Devices is a wide band medium power RF amplifier with 20.5 dB gain, operating frequency range of 24-34 GHz, and max input power of 20 dBm. It has a VSWR of 7 and operates b/w -40 to +85°C. Ideal for RF & microwave applications requiring high gain and broad frequency coverage.

50 ohm

COMPONENT

20.5 dB

20 dBm

34000 MHz

24000 MHz

85 Cel

-40 Cel

WIDE BAND MEDIUM POWER

7

A3I35D025WGNR1 by NXP Semiconductors

A3I35D025WGNR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 17; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Maximum Operating Temperature: 150 Cel;

50 ohm

COMPONENT

26.5 dB

28 dBm

SURFACE MOUNT

1

17

4000 MHz

3200 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

28

NARROW BAND HIGH POWER

LDMOS

10

A3I35D025WNR1 by NXP Semiconductors

A3I35D025WNR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 17; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Minimum Operating Frequency: 3200 MHz;

50 ohm

COMPONENT

26.5 dB

28 dBm

e3

SURFACE MOUNT

1

17

4000 MHz

3200 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

28

NARROW BAND HIGH POWER

LDMOS

TIN

10

BGU8062J by NXP Semiconductors

BGU8062J

NXP Semiconductors

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 10; Package Body Material: PLASTIC/EPOXY; Screening Level: IEC-60134; Characteristic Impedance: 50 ohm;

50 ohm

COMPONENT

20 dBm

e4

SURFACE MOUNT

1

10

2700 MHz

1500 MHz

PLASTIC/EPOXY

SOLCC10,.12SQ,20

5

WIDE BAND LOW POWER

IEC-60134

85 mA

NICKEL PALLADIUM GOLD

1.43

BGU8051,118 by NXP Semiconductors

BGU8051,118

NXP Semiconductors

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Characteristic Impedance: 50 ohm; Maximum Input Power (CW): 20 dBm;

50 ohm

COMPONENT

17 dB

20 dBm

SURFACE MOUNT

1

8

1500 MHz

300 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

SOLCC8,.08,20

5

WIDE BAND LOW POWER

60 mA

1.07

HMC1132PM5ETR by Analog Devices

HMC1132PM5ETR

Analog Devices

Analog Devices' HMC1132PM5ETR is a wide band medium power RF amplifier with 21 dB gain, 50 ohm impedance, and 18 dBm CW input power. It operates b/w 27-32 GHz, making it ideal for high-frequency applications in RF and microwave systems. With a VSWR of 7 and operating temperatures from -55 to 85°C, it ensures reliable performance in various environments.

50 ohm

COMPONENT

21 dB

18 dBm

32000 MHz

27000 MHz

85 Cel

-55 Cel

WIDE BAND MEDIUM POWER

7