Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 10; Package Body Material: PLASTIC/EPOXY; Screening Level: IEC-60134; Characteristic Impedance: 50 ohm;
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RF & Microwave Amplifiers BGU8062J attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors
Characteristic Impedance:
Construction:
Maximum Input Power (CW):
JESD-609 Code:
Mounting Feature:
No. of Functions:
No. of Terminals:
Maximum Operating Frequency:
Minimum Operating Frequency:
Package Body Material:
Package Equivalence Code:
Power Supplies (V):
RF or Microwave Device Type:
Screening Level:
Maximum Supply Current:
Terminal Finish:
Maximum Voltage Standing Wave Ratio:
BGU8062J RF & Microwave trade compliance attributes, and parameters.
HTS
8542.33.00.01
SB
8542.33.00.00
PCN Obsolescence/ EOL - BGU8062J
PCN Packaging - All Dev Label Update 15/Dec/2020
NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.
Executive Director, President, CEO
Kurt Sievers
Executive VP, CFO
Bill Betz
Executive VP, Chief Sales Officer
Ron Martino
ICN8
Fabrication
Fab Initiation
1996
Netherlands
Nijmegen
Wafer Capacity
55,000
ATMC (Austin Tech & Mfg Center)
1995
USA
Austin
30,000
N/A
1989
Germany
Boeblingen
CHD
1993
Chandler
OHTC
1991
24,000
New Expansion Fab
2026
ECHO
2020
10,000
LL4148
First Components International
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
LM555CM
Renesas Electronics
Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
1N4148
Semitron
RECTIFIER DIODE; Surface Mount: NO; JESD-609 Code: e0; Maximum Output Current: .15 A; Maximum Operating Temperature: 200 Cel; Maximum Reverse Recovery Time: .004 us;
INA826AIDGKR
Texas Instruments
INA826AIDGKR by Texas Instruments is an instrumentation amplifier with 150uV max input offset voltage, 0.095uA max average bias current, and 1MHz nominal bandwidth. Ideal for automotive applications due to its -40 to 125 °C operating temperature range and high common mode rejection ratio of 120dB.
BSS138PS,115
Nexperia
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 2; No. of Terminals: 6; Minimum DS Breakdown Voltage: 60 V;
2N7002
Unisonic Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Package Body Material: PLASTIC/EPOXY; Package Shape: RECTANGULAR;
Silicon Standard
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .225 W; Maximum Drain-Source On Resistance: 7.5 ohm; Transistor Element Material: SILICON;
SMBJ18CA
Forward International Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Nominal Breakdown Voltage: 21.05 V; Maximum Clamping Voltage: 29.2 V; Maximum Repetitive Peak Reverse Voltage: 18 V; Polarity: BIDIRECTIONAL;
Bytesonic Electronics
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Jiangsu Changjiang Electronics Technology
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Operating Mode: ENHANCEMENT MODE; Transistor Application: SWITCHING;
OPA2227UA
OPA2227UA by Texas Instruments is a dual operational amplifier with low-offset voltage of 200 uV and bias current of 0.01 uA. It operates at temperatures ranging from -40 to 85 °C, making it suitable for industrial applications requiring precise signal amplification. With a unity gain bandwidth of 8000 kHz, this op amp is ideal for high-frequency circuit designs.
Good-ark Electronics
RECTIFIER DIODE; Surface Mount: NO; No. of Elements: 1; Maximum Non Repetitive Peak Forward Current: .5 A; Maximum Forward Voltage (VF): 1 V; No. of Phases: 1;
Jgd Semiconductors
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Polarity: BIDIRECTIONAL; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.2 V; Maximum Repetitive Peak Reverse Voltage: 18 V;
U.FL-R-SMT-1(10)
Hirose Electric
U.FL-R-SMT-1(10) by Hirose Electric is a RF connector with 50 ohm impedance, 0.05 dB insertion loss, and 8 GHz operating frequency. Ideal for board mounting in commercial applications, it features gold termination finish, liquid crystal polymer insulator, and 200VAC dielectric voltage resistance.
BSS138
Siemens
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Drain-Source On Resistance: 3.5 ohm; Terminal Finish: Tin/Lead (Sn/Pb);
1N4148WS
Eic Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
MBR130T1G
Onsemi
MBR130T1G by Onsemi is a Schottky rectifier diode with max output current of 1A and max repetitive peak reverse voltage of 30V. It operates b/w -65 to 125°C, suitable for surface mount applications in electronics requiring low forward voltage drop.
ERJ2RKF1002X
Panasonic
Panasonic's ERJ2RKF1002X is a fixed resistor with 10000 ohm resistance, 1% tolerance, and 0.1 W power dissipation. Ideal for surface mount applications in automotive electronics due to AEC-Q200 compliance and operating temperature range of -55 to 155 °C.
Goodwork Semiconductor
Diotec Electronics
MMG3H21NT1
Freescale Semiconductor
WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Package Equivalence Code: TO-243; Maximum Supply Current: 110 mA;
AMMP-6220-BLK
Broadcom
AMMP-6220-BLK by Broadcom is a wide band low power RF amplifier with a gain of 22 dB. It operates at frequencies ranging from 6 GHz to 20 GHz and has a max input power of 15 dBm. This surface mount component is commonly used in RF and microwave applications.
ERA-3SM
Mini-circuits
The Mini-circuits ERA-3SM is a wide band low power RF amplifier with 16 dB gain, operating from 0 to 3000 MHz. It has a max input power of 13 dBm and VSWR of 1.5, suitable for applications requiring high frequency amplification in RF & microwave systems. The component is designed for surface mount installation and operates within a temperature range of -45 to 85°C.
HMC414MS8GETR
Hittite Microwave
NARROW BAND MEDIUM POWER; JESD-609 Code: e3; Maximum Operating Frequency: 2800 MHz; Maximum Input Power (CW): 17 dBm; Characteristic Impedance: 50 ohm; Terminal Finish: Matte Tin (Sn);
MGA-86576-TR1G
Agilent Technologies
WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: METAL; Technology: GAAS; JESD-609 Code: e3;
SGA-6286Z
Sirenza Microdevices
SGA-6286Z by Sirenza Microdevices is a wide band low power RF amplifier with 12.5 dB gain and 50 ohm impedance. It operates from 0 to 5500 MHz, with a max input power of 18 dBm. Ideal for applications requiring surface mount components in the RF & Microwave field.
GALI-6
The Mini-circuits GALI-6 is a wide band low power RF amplifier with 10 dB gain and 50 ohm impedance. It operates from 0 to 4000 MHz, handling up to 20 dBm CW input power. Ideal for surface mount applications in RF & microwave systems, it offers VSWR of 2 and operates b/w -45°C to +85°C.
HMC1040LP3CETR
Analog Devices
Analog Devices' HMC1040LP3CETR is a wide band low power RF amplifier with 17 dB gain, operating from 24-43.5 GHz. It has a max input power of 5 dBm and operates on a 2.5 V supply, making it ideal for high-frequency communication systems in various applications.
MGA-31689-BLKG
Broadcom's MGA-31689-BLKG is a GAAS RF amplifier with 16.6 dB gain, operating from 1500 to 3000 MHz. It has a max input power of 15 dBm and requires a 5V power supply. This wide band medium power device is ideal for applications requiring surface mount construction in RF & microwave systems.
HMC752LC4
WIDE BAND LOW POWER; Maximum Operating Frequency: 28000 MHz; Characteristic Impedance: 50 ohm; JESD-609 Code: e4; Maximum Input Power (CW): -5 dBm; Maximum Operating Temperature: 85 Cel;
RF3827
Rf Micro Devices
WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 8;
HMC634LC4TR
WIDE BAND LOW POWER; Minimum Operating Frequency: 5000 MHz; Characteristic Impedance: 50 ohm; Maximum Input Power (CW): 10 dBm; Construction: COMPONENT; Maximum Operating Frequency: 20000 MHz;
CMPA5585030F
Wolfspeed
WIDE BAND LOW POWER;
BGU8009,115
NXP Semiconductors
NXP Semiconductors' BGU8009,115 is a RF & Microwave Amplifier with 6 terminals and PLASTIC/EPOXY package. It operates b/w -40 to 85 °C with power supplies of 1.8/2.85 V. Ideal for surface mount applications in various electronic devices.
MGA-62563-TR1G
Broadcom's MGA-62563-TR1G is a GAAS RF amplifier with 20.4 dB gain, operating from 100 MHz to 3 GHz. It has a max input power of 21 dBm and VSWR of 2, suitable for wideband low-power applications in RF and microwave systems. The component features a plastic/epoxy package, surface mounting, and requires 3-5V power supply with a max current draw of 77 mA.
RF6886TR13
Qorvo
Qorvo's RF6886TR13 is a wide band high power amplifier with 31dB gain, operating from 433MHz to 470MHz. It has a max input power of 12dBm and VSWR of 5, suitable for RF applications requiring high power amplification in the frequency range. The component is designed for surface mount installation in various electronic systems.
AC1226
Teledyne Technologies
WIDE BAND LOW POWER; Minimum Operating Frequency: 10 MHz; Additional Features: I/P POWER-MAX (PEAK)=27DBM; Maximum Operating Frequency: 1200 MHz; Minimum Operating Temperature: -55 Cel; Characteristic Impedance: 50 ohm;
XF1001-SC-0G00
Mimix Broadband
WIDE BAND MEDIUM POWER; Maximum Operating Temperature: 85 Cel; Terminal Finish: Matte Tin (Sn); Minimum Operating Frequency: 0 MHz; Gain: 10.1 dB; Maximum Input Power (CW): 24 dBm;
HMC342LC4TR
HMC342LC4TR by Analog Devices is a wide band low power RF amplifier with 1 function and 24 terminals. It operates at temperatures ranging from -40 to 85°C and requires a power supply of 3V. This ceramic package surface mount device is suitable for RF and microwave applications.
QPA2611TR7
Qorvo's QPA2611TR7 is a GAN technology RF amplifier with 35.5 dB gain, operating from 8-12 GHz. It offers 21 dBm CW input power handling and VSWR of 3, suitable for wideband high-power applications in RF & microwave systems. The component has 24 terminals, surface-mountable on plastic/epoxy package body.
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BGU8007,115
NXP Semiconductors' BGU8007,115 is a RF & Microwave Amplifier with 6 terminals and Tin finish. It operates b/w -40 to 85°C, powered by 1.8V supply at max current of 14.7mA. Ideal for surface mount applications in various electronic devices.
BGU8052X
BGU8019X
NARROW BAND LOW POWER; Additional Features: IEC-60134; Gain: 16 dB; Characteristic Impedance: 50 ohm; Minimum Operating Temperature: -40 Cel; Maximum Input Power (CW): 10 dBm;
BGU8009
The NXP Semiconductors BGU8009 is a narrow band low power RF amplifier with a gain of 17.6 dB, operating b/w 1559-1610 MHz. It can handle up to 10 dBm CW input power and has an impedance of 50 ohm. Ideal for RF and microwave applications requiring high gain amplification in a compact form factor.
BGU8103
The NXP Semiconductors BGU8103 is a narrow band low power RF amplifier with a gain of 14.5 dB. It operates at frequencies b/w 1559 MHz and 1610 MHz, making it suitable for applications in the RF and microwave field. Its compact surface mount package and low power consumption of 1.6 mA make it an ideal choice for various wireless communication systems.
BGU8103X
The NXP Semiconductors BGU8103X is a RF & Microwave Amplifier with 10 dBm CW input power, 1.78 max VSWR, and 14.5 dB gain. It operates b/w -40 to 85°C, has a characteristic impedance of 50 ohm, and is suitable for narrow band low power applications in the frequency range of 1559-1610 MHz.
BGU8011X
RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BICMOS; Power Supplies (V): 1.8/2.85;
BGU8L1X
WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Screening Level: IEC-60134; Gain: 12.5 dB;
BGU8053
WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Screening Level: IEC-60134; Maximum Operating Frequency: 6000 MHz;
BGU8019
NARROW BAND LOW POWER; Minimum Operating Temperature: -40 Cel; Gain: 18.5 dB; Construction: COMPONENT; Maximum Operating Temperature: 85 Cel; Minimum Operating Frequency: 1559 MHz;
BGU8061
NARROW BAND LOW POWER;
BGU8011X,115
RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BICMOS; Package Equivalence Code: SOLCC6,.04,16;
BGU8053X
WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Screening Level: IEC-60134; Maximum Supply Current: 85 mA;
BGU8007
NARROW BAND LOW POWER; Terminal Finish: Pure Tin (Sn); Minimum Operating Temperature: -40 Cel; Characteristic Impedance: 50 ohm; Construction: COMPONENT; Maximum Input Power (CW): 0 dBm;
BGU8061J
BGU8051
WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Maximum Input Power (CW): 20 dBm; Maximum Supply Current: 60 mA;
BGU8051,118
WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Characteristic Impedance: 50 ohm; Maximum Input Power (CW): 20 dBm;
BGU8011
NARROW BAND LOW POWER; JESD-609 Code: e3; Terminal Finish: Tin (Sn);
BGU8051X
WIDE BAND LOW POWER; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 1500 MHz; Maximum Operating Temperature: 85 Cel; Minimum Operating Frequency: 300 MHz; Minimum Operating Temperature: -40 Cel;
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