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HMC1099LP5DETR

Analog Devices

HMC1099LP5DETR by Analog Devices

HMC1099LP5DETR by Analog Devices is a GAN technology RF amplifier with 16.5 dB gain, operating from 10 MHz to 1100 MHz. It has a max input power of 33 dBm and VSWR of 6, suitable for wideband high-power applications in RF and microwave systems. The component is housed in a plastic/epoxy package with 32 terminals, designed for surface mount installation at temperatures ranging from -40 °C to 85°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,531 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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5,531

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Digiode

USA . 88 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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88

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 4,745 parts In-Stock

1+ parts

$1.601

100+ parts

-

1k+ parts

$1.488

10k+ parts

-

4,745

$1.601

-

$1.488

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IDEA Electronic Components Group

UK . 2,167 parts In-Stock

1+ parts

$1.721

100+ parts

-

1k+ parts

$1.635

10k+ parts

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2,167

$1.721

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$1.635

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DigiPath Technology Company

USA . 1,841 parts In-Stock

1+ parts

$2.685

100+ parts

$2.577

1k+ parts

-

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1,841

$2.685

$2.577

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One Stop Electronics

USA . 1,632 parts In-Stock

1+ parts

$4.000

100+ parts

-

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1,632

$4.000

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Ampacity Inc.

Singapore . 808 parts In-Stock

1+ parts

$5.000

100+ parts

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808

$5.000

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Semicontronic

India . 827 parts In-Stock

1+ parts

$11.000

100+ parts

$10.725

1k+ parts

$10.670

10k+ parts

-

827

$11.000

$10.725

$10.670

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AZTECH Wire

Italy . 534 parts In-Stock

1+ parts

$11.896

100+ parts

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534

$11.896

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Corphita

USA . 87 parts In-Stock

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87

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Overview

Elevate your RF & Microwave Amplifier performance with the HMC1099LP5DETR by Analog Devices. This wideband high-power component boasts a gain of 16.5 dB and a maximum input power of 33 dBm, delivering exceptional quality and reliability for your applications. With a construction technology of GaN and a maximum operating frequency of 1100 MHz, this amplifier offers superior value and benefits to customers seeking top-notch performance in their projects. Trust Analog Devices to provide innovative solutions that elevate your RF & Microwave capabilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the amplifier easy to handle and resistant to damage during operation.

Maximum Input Power (CW): 33 dBm

With a high maximum input power, this amplifier can handle strong signals without distortion or loss of performance.

Maximum Voltage Standing Wave Ratio: 6

Having a maximum VSWR of 6 ensures efficient power transfer and minimal signal reflections in the system.

Construction: COMPONENT

Being a component-level device allows for flexibility in system integration and customization according to specific requirements.

Power Supplies (V): 28

Operating at 28V allows for high power output and efficiency in amplification.

No. of Terminals: 32

Having 32 terminals provides ample connectivity options for various input and output configurations.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this amplifier can withstand harsh environmental conditions without compromising performance.

Minimum Operating Temperature: -40 °C

Operating down to -40 °C ensures reliability and stability in extreme cold environments.

Technology: GAN

Using Gallium Nitride technology enables high efficiency, power density, and linearity in amplification.

Maximum Supply Current: 100 mA

Requiring low supply current helps in reducing power consumption and heat dissipation in the system.

RF or Microwave Device Type: WIDE BAND HIGH POWER

Being a wideband high-power amplifier allows for versatile use across a broad frequency range with high output capability.

Characteristic Impedance: 50 ohm

Having a standard 50 ohm impedance ensures compatibility with most RF systems and components.

Gain: 16.5 dB

With a high gain of 16.5 dB, this amplifier boosts signal strength effectively for improved overall performance.

Minimum Operating Frequency: 10 MHz

Operating at a low frequency of 10 MHz allows for amplification of signals across a wide range of applications.

Mounting Feature: SURFACE MOUNT

The surface mount feature makes installation and integration of the amplifier easy and efficient in various electronic systems.

Maximum Operating Frequency: 1100 MHz

This amplifier can operate at high frequencies up to 1100 MHz, making it suitable for demanding RF and microwave applications.

Technical Specifications

RF & Microwave Amplifiers HMC1099LP5DETR attributes and parameters. Explore more RF & Microwave Amplifiers devices from Analog Devices

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

16.5 dB

Maximum Input Power (CW):

33 dBm

Mounting Feature:

No. of Functions:

1

No. of Terminals:

32

Maximum Operating Frequency:

1100 MHz

Minimum Operating Frequency:

10 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Package Equivalence Code:

LCC32,.2SQ,20

Power Supplies (V):

28

RF or Microwave Device Type:

Maximum Supply Current:

100 mA

Technology:

GAN

Maximum Voltage Standing Wave Ratio:

6

Trade Compliance

HMC1099LP5DETR RF & Microwave trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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