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BGA2012,115

NXP Semiconductors

BGA2012,115 by NXP Semiconductors

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Supply Current: 10 mA;

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,181 parts In-Stock

1+ parts

-

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1k+ parts

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8,181

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Anansix

USA . 2,774 parts In-Stock

1+ parts

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1k+ parts

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2,774

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Digiode

USA . 1,673 parts In-Stock

1+ parts

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100+ parts

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10k+ parts

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1,673

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 1,000 parts In-Stock

1+ parts

$1.921

100+ parts

$1.748

1k+ parts

$1.575

10k+ parts

-

1,000

$1.921

$1.748

$1.575

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Native Components

USA . 282 parts In-Stock

1+ parts

$7.630

100+ parts

-

1k+ parts

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282

$7.630

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AZTECH Wire

Italy . 344 parts In-Stock

1+ parts

$10.540

100+ parts

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344

$10.540

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One Stop Electronics

USA . 767 parts In-Stock

1+ parts

$22.000

100+ parts

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767

$22.000

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Ampacity Inc.

Singapore . 793 parts In-Stock

1+ parts

$23.000

100+ parts

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793

$23.000

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UNI Independent Distributors

Spain . 5,580 parts In-Stock

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5,580

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Corphita

USA . 3,950 parts In-Stock

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3,950

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Northwest PG Solutions

USA . 1,892 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$7.477

10k+ parts

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1,892

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$7.477

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Technical Specifications

RF & Microwave Amplifiers BGA2012,115 attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

14 dB

JESD-609 Code:

e3

Mounting Feature:

No. of Functions:

1

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

Package Equivalence Code:

TSSOP6,.08

Power Supplies (V):

3

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Amplifiers

Maximum Supply Current:

10 mA

Technology:

Terminal Finish:

Tin (Sn)

Trade Compliance

BGA2012,115 RF & Microwave trade compliance attributes, and parameters.

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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