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HMC8113

Analog Devices

HMC8113 by Analog Devices

Analog Devices' HMC8113 is a wide band high power RF module with 85 dB gain, operating from 2-6 GHz. It can handle up to 5 dBm CW input power and has a VSWR of 2. Ideal for RF & microwave applications requiring high power amplification in the temperature range of -10 °C to +50°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,139 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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1,139

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Digiode

USA . 752 parts In-Stock

1+ parts

-

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-

1k+ parts

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752

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,545 parts In-Stock

1+ parts

$0.817

100+ parts

-

1k+ parts

$0.760

10k+ parts

-

1,545

$0.817

-

$0.760

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IDEA Electronic Components Group

UK . 1,839 parts In-Stock

1+ parts

$0.879

100+ parts

-

1k+ parts

$0.835

10k+ parts

-

1,839

$0.879

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$0.835

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DigiPath Technology Company

USA . 1,621 parts In-Stock

1+ parts

$1.371

100+ parts

$1.316

1k+ parts

-

10k+ parts

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1,621

$1.371

$1.316

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One Stop Electronics

USA . 935 parts In-Stock

1+ parts

$14.000

100+ parts

-

1k+ parts

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935

$14.000

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Ampacity Inc.

Singapore . 244 parts In-Stock

1+ parts

$14.000

100+ parts

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244

$14.000

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Semicontronic

India . 290 parts In-Stock

1+ parts

$17.000

100+ parts

$16.575

1k+ parts

$16.490

10k+ parts

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290

$17.000

$16.575

$16.490

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AZTECH Wire

Italy . 770 parts In-Stock

1+ parts

$19.247

100+ parts

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770

$19.247

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Corphita

USA . 174 parts In-Stock

1+ parts

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174

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Overview

Elevate your RF and microwave amplification with the HMC8113 by Analog Devices. Renowned for their superior quality and cutting-edge technology, Analog Devices delivers exceptional performance in the field of RF & Microwave Amplifiers. The HMC8113 boasts a wide band high power design with a remarkable gain of 85 dB, offering unmatched reliability and efficiency. Perfect for applications requiring high power input, this module operates seamlessly between frequencies of 2000 MHz to 6000 MHz, making it versatile and adaptable to various industries. Experience the difference with the HMC8113, where innovation meets excellence.

Feature Benefit Bullets

Maximum Input Power (CW): 5 dBm

With a maximum input power of 5 dBm, this amplifier can handle high power levels without getting damaged, making it suitable for demanding applications.

Maximum Voltage Standing Wave Ratio: 2

A maximum VSWR of 2 indicates good impedance matching and minimal signal reflection, ensuring efficient power transfer and signal integrity.

Construction: MODULE

The modular construction allows for easy integration into existing systems and enables scalability for different power levels and frequency bands.

Maximum Operating Temperature: 50 °C

With a maximum operating temperature of 50 °C, this amplifier can withstand higher temperatures, providing reliable performance in varied environments.

Minimum Operating Temperature: 10 °C

The amplifier can operate at temperatures as low as 10 °C, making it suitable for both indoor and outdoor applications in different climates.

RF or Microwave Device Type: WIDE BAND HIGH POWER

This amplifier is designed for wideband applications and high power requirements, making it versatile and capable of handling a broad range of frequencies and power levels.

Characteristic Impedance: 50 ohm

The 50 ohm impedance matches standard RF components, ensuring compatibility and efficient signal transmission without losses.

Gain: 85 dB

With a gain of 85 dB, this amplifier provides substantial signal amplification, improving the signal-to-noise ratio and enhancing overall system performance.

Minimum Operating Frequency: 2000 MHz

With a minimum operating frequency of 2000 MHz, this amplifier is suitable for a wide range of RF and microwave applications, including high-frequency communications and radar systems.

Maximum Operating Frequency: 6000 MHz

The amplifier can operate at frequencies up to 6000 MHz, making it ideal for a variety of applications requiring high-frequency signals and wide bandwidth.

Technical Specifications

RF & Microwave Amplifiers HMC8113 attributes and parameters. Explore more RF & Microwave Amplifiers devices from Analog Devices

Specs

Additional Features:

TTL COMPATIBLE

Characteristic Impedance:

50 ohm

Construction:

MODULE

Gain:

85 dB

Maximum Input Power (CW):

5 dBm

Maximum Operating Frequency:

6000 MHz

Minimum Operating Frequency:

2000 MHz

Maximum Operating Temperature:

50 Cel

Minimum Operating Temperature:

10 Cel

RF or Microwave Device Type:

Maximum Voltage Standing Wave Ratio:

2

Trade Compliance

HMC8113 RF & Microwave trade compliance attributes, and parameters.

ECCN

3A001.B.4.A.4

ECCN Governance

EAR

HTS

8543.90.68.00

PCN

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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