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ADPA1107ACPZN-R7

Analog Devices

ADPA1107ACPZN-R7 by Analog Devices

ADPA1107ACPZN-R7 by Analog Devices is a GAN technology RF amplifier with 27dB gain, 50 ohm impedance, and 31dBm CW input power. It operates b/w 4800-6000MHz, suitable for wideband high-power applications in RF & microwave systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,888 parts In-Stock

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5,888

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Digiode

USA . 514 parts In-Stock

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514

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Distributors (Availability)

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Parana Technologies

USA . 3,956 parts In-Stock

1+ parts

$2.414

100+ parts

-

1k+ parts

$2.245

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3,956

$2.414

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$2.245

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IDEA Electronic Components Group

UK . 985 parts In-Stock

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$2.596

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-

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$2.466

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985

$2.596

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$2.466

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DigiPath Technology Company

USA . 1,976 parts In-Stock

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$4.050

100+ parts

$3.888

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1,976

$4.050

$3.888

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One Stop Electronics

USA . 1,315 parts In-Stock

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$7.000

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1,315

$7.000

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Ampacity Inc.

Singapore . 775 parts In-Stock

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$10.000

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775

$10.000

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AZTECH Wire

Italy . 842 parts In-Stock

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$13.730

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842

$13.730

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Semicontronic

India . 1,471 parts In-Stock

1+ parts

$39.000

100+ parts

$38.025

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$37.830

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1,471

$39.000

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$37.830

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QUARKTWIN TECHNOLOGY LTD

USA . 12,656 parts In-Stock

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Northwest PG Solutions

USA . 1,370 parts In-Stock

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$3.425

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1,370

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$3.425

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Native Components

USA . 863 parts In-Stock

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$3.390

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863

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$3.390

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Corphita

USA . 244 parts In-Stock

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244

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Overview

Unlock unparalleled performance with the ADPA1107ACPZN-R7 by Analog Devices, a cutting-edge RF & Microwave Amplifier designed for wide band high power applications. With a gain of 27 dB and maximum input power of 31 dBm, this GAN technology-powered component ensures superior signal quality and reliability. Ideal for demanding environments, this surface mount device operates seamlessly between -40 °C to 85°C, offering customers unmatched value and versatility in their RF amplification needs. Trust Analog Devices for top-tier quality and innovation in RF & Microwave technology.

Feature Benefit Bullets

Maximum Input Power (CW): 31 dBm

With the ability to handle high power inputs up to 31 dBm, this amplifier is suitable for applications that require high power handling capabilities without risking damage to the device.

Maximum Voltage Standing Wave Ratio: 1.54

The low VSWR value of 1.54 ensures efficient power transfer and minimal signal reflection, resulting in improved overall performance of the amplifier.

Construction: COMPONENT

Being a component-level amplifier allows for flexibility in integration with existing systems and customization according to specific project requirements.

No. of Terminals: 40

The high number of terminals allows for versatile connectivity options and facilitates complex circuit designs for advanced applications.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85 °C, this amplifier can withstand harsh environmental conditions and maintain performance reliability.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40 °C ensures the amplifier can operate in cold environments without compromising its functionality.

Technology: GAN

Utilizing Gallium Nitride technology provides high efficiency, power density, and frequency capabilities, making this amplifier ideal for demanding RF and microwave applications.

RF or Microwave Device Type: WIDE BAND HIGH POWER

As a wideband high-power amplifier, this device offers broad frequency coverage and high output power, making it suitable for a range of applications requiring high performance.

Characteristic Impedance: 50 ohm

The 50 ohm impedance matches standard RF systems, ensuring optimal power transfer and signal integrity, making this amplifier compatible with a wide range of systems.

Gain: 27 dB

With a gain of 27 dB, this amplifier can boost the power of input signals significantly, enhancing signal strength and overall system performance.

Minimum Operating Frequency: 4800 MHz

The ability to operate at frequencies as low as 4800 MHz makes this amplifier suitable for a variety of applications requiring lower frequency ranges.

Mounting Feature: SURFACE MOUNT

The surface mount configuration allows for easy installation and integration into circuit boards, making it a convenient choice for compact and densely populated systems.

Maximum Operating Frequency: 6000 MHz

Capable of operating at frequencies up to 6000 MHz, this amplifier is ideal for high-frequency applications that demand wider bandwidth and extended coverage.

Technical Specifications

RF & Microwave Amplifiers ADPA1107ACPZN-R7 attributes and parameters. Explore more RF & Microwave Amplifiers devices from Analog Devices

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

27 dB

Maximum Input Power (CW):

31 dBm

Mounting Feature:

No. of Functions:

1

No. of Terminals:

40

Maximum Operating Frequency:

6000 MHz

Minimum Operating Frequency:

4800 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Equivalence Code:

LCC40,.24SQ,20

RF or Microwave Device Type:

Technology:

GAN

Maximum Voltage Standing Wave Ratio:

1.54

Trade Compliance

ADPA1107ACPZN-R7 RF & Microwave trade compliance attributes, and parameters.

ECCN

3A001.B.2.A.4

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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