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TGM2635-CP

Qorvo

TGM2635-CP by Qorvo

TGM2635-CP by Qorvo is a wide band high power RF amplifier with 26 dB gain, operating from 7900 MHz to 11000 MHz. It has a max input power of 33 dBm and VSWR of 3, suitable for surface mount applications in RF & microwave systems. Operating temperature ranges from -40°C to 85°C.

Median Price

$2,379.010

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 5 parts In-Stock

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$2,379.010

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5

$2,379.010

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Distributors (In-Stock)

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Nova Conductors

Japan . 66 parts In-Stock

1+ parts

$2,163.000

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66

$2,163.000

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Vyrian

USA . 3,199 parts In-Stock

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3,199

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Distributors (Availability)

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Corohmni

South Africa . 42 parts In-Stock

1+ parts

$1.741

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42

$1.741

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Aztec Data Supply Inc.

USA . 3,541 parts In-Stock

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$2.350

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3,541

$2.350

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AZTECH Wire

Italy . 474 parts In-Stock

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$19.069

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$19.069

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Aranea Global

USA . 2,000 parts In-Stock

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$2,119.740

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$2,034.950

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2,000

$2,119.740

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$2,034.950

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Continental Prestige Electronics

USA . 6,612 parts In-Stock

1+ parts

$2,163.000

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$2,119.740

6,612

$2,163.000

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$2,119.740

Argo Parts USA

USA . 3,653 parts In-Stock

1+ parts

$2,163.000

100+ parts

$2,141.370

1k+ parts

$2,119.740

10k+ parts

$2,098.110

3,653

$2,163.000

$2,141.370

$2,119.740

$2,098.110

Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Overview

TriQuint leads the market in developing gallium nitride (GaN) products and processes. TriQuint's GaN technology supports RF requirements up to 40GHz with drain bias up to 48V. GaN-based solutions offer greater power density, efficiency, frequency range and ruggedness. These qualities enable RF systems to use less electricity, operate with less input voltage and deliver greater RF output power while reducing amplifier size and part counts. TriQuint GaN technology enables a wide range of MMIC amplifiers, discrete transistors and switches for commercial and defense applications. TriQuint is redefining what is possible, helping customers reach further while bringing designs to market faster than ever before. TriQuint narrowband amplifiers provide higher power with smaller form factors compared to previous generations. TriQuint wideband amplifiers and discrete transistors deliver record-setting power and efficiency levels. TriQuint switches support next-generation radar, electronic warfare (EW) and instrumentation systems with greater efficiency in smaller packages or as die-level components.

Feature Benefit Bullets

Maximum Input Power (CW): 33 dBm

With a high maximum input power, this amplifier can handle strong input signals without distortion, ensuring reliable performance.

Maximum Voltage Standing Wave Ratio: 3

A low VSWR of 3 indicates good matching between input and output, minimizing signal reflections and maximizing power transfer efficiency.

Construction: MODULE

The modular construction of this amplifier allows for easy integration into existing systems and simplifies maintenance and troubleshooting.

No. of Terminals: 10

With 10 terminals, this amplifier offers flexibility in connectivity options and can support various input and output configurations.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature range ensures stable performance even in harsh environmental conditions, making it suitable for a wide range of applications.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows this amplifier to operate reliably in cold environments without compromising performance.

RF or Microwave Device Type: WIDE BAND HIGH POWER

As a wide band high power device, this amplifier can handle a broad range of frequencies and deliver high output power, making it versatile for different applications.

Characteristic Impedance: 50 ohm

With a standard impedance of 50 ohm, this amplifier can easily interface with other RF components and systems, ensuring proper signal transmission.

Gain: 26 dB

The high gain of 26 dB amplifies the input signal effectively, providing a strong output signal for improved system performance.

Minimum Operating Frequency: 7900 MHz

With a low minimum operating frequency, this amplifier is suitable for applications that require amplification of signals in the lower frequency range.

Mounting Feature: SURFACE MOUNT

The surface mount design allows for easy installation on circuit boards or other surfaces, simplifying the integration of this amplifier into electronic systems.

Maximum Operating Frequency: 11000 MHz

With a high maximum operating frequency, this amplifier can amplify signals in the GHz range, making it suitable for high-frequency applications such as telecommunications and radar.

Technical Specifications

RF & Microwave Amplifiers TGM2635-CP attributes and parameters. Explore more RF & Microwave Amplifiers devices from Qorvo

Specs

Characteristic Impedance:

50 ohm

Construction:

MODULE

Gain:

26 dB

Maximum Input Power (CW):

33 dBm

Mounting Feature:

No. of Functions:

1

No. of Terminals:

10

Maximum Operating Frequency:

11000 MHz

Minimum Operating Frequency:

7900 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

RF or Microwave Device Type:

Maximum Voltage Standing Wave Ratio:

3

PCN

Manufacturer Highlights

Qorvo

Your car. Your smartphone. Your wrist. Your heart. Even outer space. Qorvo products are at work connecting, protecting and powering the planet. We bring core radio frequency (RF) and power technologies and solutions to mobile, infrastructure, the IoT, defense/aerospace and power management markets. Transforming the way you live, work, play and communicate — that's what inspires us. Innovation. Product Leadership. Scale. Speed. At Qorvo, we are driven by the possibility of discovery — of new RF and power technologies and advancements in design, manufacturing and communications that make the world a better, cleaner and more connected place. We've been working on that for more than 30 years, both as innovators and as stewards of our planet. And we are just getting started.

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