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BGM1013,115

NXP Semiconductors

BGM1013,115 by NXP Semiconductors

NXP Semiconductors' BGM1013,115 is a wide band low power RF amplifier with 24 dB gain and 100-3000 MHz frequency range. It operates at -40 to 85°C, draws 33 mA at 5V, and has a max input power of -10 dBm. This component is ideal for applications requiring surface mount amplifiers in the RF & Microwave field.

Median Price

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5

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1k+

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Vyrian

USA . 4,603 parts In-Stock

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Digiode

USA . 4,350 parts In-Stock

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Anansix

USA . 850 parts In-Stock

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VNN

France . 626 parts In-Stock

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Nova Conductors

Japan . 60 parts In-Stock

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Aztec Data Supply Inc.

USA . 2,338 parts In-Stock

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$1.330

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AZTECH Wire

Italy . 210 parts In-Stock

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$10.358

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One Stop Electronics

USA . 847 parts In-Stock

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$12.000

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847

$12.000

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Ampacity Inc.

Singapore . 926 parts In-Stock

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$17.000

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Semicontronic

India . 3,132 parts In-Stock

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$33.000

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$32.175

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$32.010

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QUARKTWIN TECHNOLOGY LTD

USA . 20,689 parts In-Stock

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Perfect Parts

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Lixinc

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Authorized Procurement Solutions

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Continental Prestige Electronics

USA . 3,709 parts In-Stock

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UNI Independent Distributors

Spain . 3,102 parts In-Stock

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Corphita

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Corohmni

South Africa . 880 parts In-Stock

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Argo Parts USA

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Bastille Electronics

Australia . 300 parts In-Stock

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Overview

Enhance your RF and microwave applications with the BGM1013,115 from NXP Semiconductors. With a reputation for quality and reliability, NXP Semiconductors delivers superior components that guarantee top-notch performance. This wideband low power amplifier offers a gain of 24 dB, making it ideal for a range of applications. From improved signal strength to enhanced communication capabilities, the BGM1013,115 provides value, benefits, and advantages that will take your projects to the next level. Elevate your designs with NXP Semiconductors today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the internal components of the amplifier, making it suitable for various environments.

Maximum Input Power (CW): -10 dBm

Can handle moderate input power levels without distortion or damage, ensuring reliable performance.

Power Supplies (V): 5

Requires a standard and easily available 5V power supply, making it convenient for integration into existing systems.

Minimum Operating Frequency: 100 MHz

Capable of operating at lower frequencies, suitable for applications that require amplification in that range.

Maximum Operating Frequency: 3000 MHz

Covers a wide frequency range, making it versatile for different RF and microwave applications.

Gain: 24 dB

Provides a significant amplification factor, boosting the signal strength effectively.

Technical Specifications

RF & Microwave Amplifiers BGM1013,115 attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

Additional Features:

LOW NOISE

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

24 dB

Maximum Input Power (CW):

-10 dBm

JESD-609 Code:

e3

Mounting Feature:

No. of Functions:

1

No. of Terminals:

6

Maximum Operating Frequency:

3000 MHz

Minimum Operating Frequency:

100 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Package Equivalence Code:

TSSOP6,.08

Power Supplies (V):

5

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Amplifiers

Maximum Supply Current:

33 mA

Technology:

Terminal Finish:

Tin (Sn)

Trade Compliance

BGM1013,115 RF & Microwave trade compliance attributes, and parameters.

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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