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BGM1013

NXP Semiconductors

BGM1013 by NXP Semiconductors

The NXP Semiconductors BGM1013 is a wide band low power RF amplifier with 24 dB gain. It operates from 100 MHz to 3000 MHz, with -10 dBm CW input power and 5V supply voltage. Ideal for applications requiring surface mount components in RF & microwave systems.

Median Price

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Lifecycle Status

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6

In-Stock Inventory

1k+

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Chip Stock

USA . 91,000 parts In-Stock

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VNN

France . 938 parts In-Stock

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Anansix

USA . 868 parts In-Stock

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868

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Vyrian

USA . 650 parts In-Stock

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650

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Nova Conductors

Japan . 550 parts In-Stock

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550

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Digiode

USA . 546 parts In-Stock

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546

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Aztec Data Supply Inc.

USA . 3,485 parts In-Stock

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$1.270

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$1.270

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AZTECH Wire

Italy . 650 parts In-Stock

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$5.356

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650

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Ampacity Inc.

Singapore . 355 parts In-Stock

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$16.000

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Semicontronic

India . 1,072 parts In-Stock

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$27.000

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$26.325

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$26.190

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1,072

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One Stop Electronics

USA . 368 parts In-Stock

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$30.000

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368

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RC Electronics

USA . 57,258 parts In-Stock

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Kepictronics

USA . 31,033 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,828 parts In-Stock

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Speed Components Ltd (Excess)

Israel . 6,135 parts In-Stock

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Corphita

USA . 4,584 parts In-Stock

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Continental Prestige Electronics

USA . 2,339 parts In-Stock

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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UNI Independent Distributors

Spain . 1,951 parts In-Stock

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Argo Parts USA

USA . 1,527 parts In-Stock

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Alle Elektronik GmbH

Germany . 1,204 parts In-Stock

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Assy Fe

Spain . 1,000 parts In-Stock

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Bastille Electronics

Australia . 50 parts In-Stock

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Overview

Elevate your RF and microwave amplifier performance with the BGM1013 by NXP Semiconductors. Crafted with precision and expertise, this component offers unparalleled quality and reliability. Ideal for a wide range of applications, this product delivers exceptional value and benefits to customers seeking high-performance solutions. From its impressive gain of 24 dB to its wide operating frequency range, the BGM1013 is designed to exceed expectations and elevate your projects to the next level. Experience the difference with NXP Semiconductors.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the amplifier lightweight and durable, suitable for a wide range of applications.

Maximum Input Power (CW): -10 dBm

With a maximum input power of -10 dBm, this amplifier can handle moderate power levels while maintaining optimal performance.

Construction: COMPONENT

The use of component construction ensures reliability and stability in operation, making it a dependable choice for RF and microwave applications.

Power Supplies (V): 5

The amplifier operates at a standard 5V power supply, making it compatible with common power sources and easy to integrate into existing systems.

No. of Terminals: 6

Having 6 terminals allows for easy connection and integration into circuits, providing flexibility in system design.

Maximum Operating Temperature: 85 °C

The amplifier can operate at high temperatures up to 85°C, suitable for applications where heat dissipation may be a concern.

Minimum Operating Temperature: -40 °C

With a minimum operating temperature of -40°C, this amplifier can function reliably in cold environments without risking performance issues.

Terminal Finish: Tin (Sn)

The tin finish on the terminals ensures good conductivity and solderability, facilitating easy installation and maintenance of the amplifier.

Technology: BIPOLAR

The use of bipolar technology provides stable and low-noise amplification, making this amplifier suitable for high-performance RF and microwave applications.

Maximum Supply Current: 33 mA

With a maximum supply current of 33 mA, this amplifier is energy-efficient and can be used in portable or low-power applications.

RF or Microwave Device Type: WIDE BAND LOW POWER

This amplifier is designed for wideband applications while consuming low power, making it an efficient choice for various RF and microwave systems.

Characteristic Impedance: 50 ohm

The amplifier has a standard characteristic impedance of 50 ohms, ensuring compatibility with a wide range of RF components and systems.

Gain: 24 dB

With a gain of 24 dB, this amplifier provides significant signal amplification, improving the overall performance of RF and microwave systems.

Minimum Operating Frequency: 100 MHz

The amplifier can operate at frequencies as low as 100 MHz, suitable for a wide range of RF and microwave applications with low-frequency requirements.

Maximum Operating Frequency: 3000 MHz

With a maximum operating frequency of 3000 MHz, this amplifier is ideal for high-frequency RF and microwave applications, providing versatile performance.

Technical Specifications

RF & Microwave Amplifiers BGM1013 attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

Additional Features:

LOW NOISE

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

24 dB

Maximum Input Power (CW):

-10 dBm

JESD-609 Code:

e3

Mounting Feature:

No. of Functions:

1

No. of Terminals:

6

Maximum Operating Frequency:

3000 MHz

Minimum Operating Frequency:

100 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Package Equivalence Code:

TSSOP6,.08

Power Supplies (V):

5

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Amplifiers

Maximum Supply Current:

33 mA

Technology:

Terminal Finish:

Tin (Sn)

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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