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BGE788C,112

NXP Semiconductors

BGE788C,112 by NXP Semiconductors

BGE788C,112 by NXP Semiconductors is a hybrid RF amplifier designed for high-performance applications. It operates at 24V with a max current of 325mA and withstands temperatures from -20 °C to 100 °C. Ideal for telecommunications and broadcasting systems.

Median Price

$23.028

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 27,551 parts In-Stock

1+ parts

-

100+ parts

$20.470

1k+ parts

$18.320

10k+ parts

$17.240

27,551

-

$20.470

$18.320

$17.240

Verical

USA . 14,292 parts In-Stock

1+ parts

-

100+ parts

$25.587

1k+ parts

$22.900

10k+ parts

$21.550

14,292

-

$25.587

$22.900

$21.550

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 406 parts In-Stock

1+ parts

$21.670

100+ parts

-

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406

$21.670

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Vyrian

USA . 6,273 parts In-Stock

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6,273

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Anansix

USA . 2,090 parts In-Stock

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2,090

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 621 parts In-Stock

1+ parts

$1.271

100+ parts

-

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621

$1.271

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Northwest PG Solutions

USA . 2,256 parts In-Stock

1+ parts

$1.398

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2,256

$1.398

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AZTECH Wire

Italy . 217 parts In-Stock

1+ parts

$16.910

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217

$16.910

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Corphita

USA . 2,144 parts In-Stock

1+ parts

$20.529

100+ parts

-

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2,144

$20.529

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Component Stockers USA

USA . 47,748 parts In-Stock

1+ parts

$23.160

100+ parts

$21.760

1k+ parts

$19.680

10k+ parts

$19.680

47,748

$23.160

$21.760

$19.680

$19.680

Microchip USA

USA . 7,571 parts In-Stock

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7,571

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UNI Independent Distributors

Spain . 848 parts In-Stock

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848

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Overview

Elevate your RF applications with the BGE788C,112 from NXP Semiconductors—your trusted partner in high-quality semiconductor solutions. This cutting-edge microwave amplifier delivers superior performance across a range of temperatures, ensuring reliable operation when it matters most. Designed for versatility, it's perfect for telecommunications, broadcasting, and industrial uses. Experience enhanced signal clarity and efficiency that drives innovation, making your projects not just feasible but exceptional.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material enhances durability and reduces weight, making the amplifier suitable for various applications without compromising structural integrity.

Power Supplies (V): 24

Operating at 24V allows for compatibility with a wide range of systems, ensuring efficient power management and stable performance.

Maximum Operating Temperature: 100 °C

The high maximum operating temperature of 100 °C means this amplifier can function reliably in demanding environments, making it ideal for industrial and outdoor applications.

Minimum Operating Temperature: -20 °C

With the ability to operate as low as -20 °C, this product is suitable for use in colder climates and ensures consistent performance in varying temperature conditions.

Technology: HYBRID

The hybrid technology combines the benefits of various amplification techniques, resulting in improved performance, higher efficiency, and versatility across applications.

Maximum Supply Current: 325 mA

A maximum supply current of 325 mA provides ample power for high-demand applications, ensuring optimal performance without risking damage to the amplifier.

Technical Specifications

RF & Microwave Amplifiers BGE788C,112 attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

No. of Functions:

1

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-20 Cel

Package Body Material:

Package Equivalence Code:

SOT-115J

Power Supplies (V):

24

Sub-Category:

RF/Microwave Amplifiers

Maximum Supply Current:

325 mA

Technology:

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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