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BGU7052,118

NXP Semiconductors

BGU7052,118 by NXP Semiconductors

BGU7052,118 by NXP Semiconductors is a surface mount RF amplifier designed for robust performance in various applications. It operates b/w -40 °C and 85 °C with a supply voltage of 3.3V and a max current of 95mA. Ideal for enhancing signal strength in communication systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,301 parts In-Stock

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6,301

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Digiode

USA . 4,285 parts In-Stock

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4,285

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Anansix

USA . 2,023 parts In-Stock

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2,023

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Distributors (Availability)

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AZTECH Wire

Italy . 366 parts In-Stock

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$15.610

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366

$15.610

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One Stop Electronics

USA . 1,204 parts In-Stock

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$28.000

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1,204

$28.000

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UNI Independent Distributors

Spain . 7,620 parts In-Stock

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7,620

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Northwest PG Solutions

USA . 1,296 parts In-Stock

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Native Components

USA . 844 parts In-Stock

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844

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Corphita

USA . 389 parts In-Stock

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389

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Perfect Parts

USA . 22 parts In-Stock

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Overview

Unlock superior performance in your RF applications with the BGU7052,118 from NXP Semiconductors. Renowned for their innovation and reliability, NXP delivers unmatched quality in every component. This versatile amplifier enhances signal clarity while operating efficiently across a wide temperature range, making it ideal for demanding environments. Elevate your projects with a trusted partner committed to excellence—experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body ensures durability and resilience, making this amplifier suitable for various applications in harsh environments.

Power Supplies: 3.3V

Operating at a standard voltage of 3.3V enhances compatibility with a wide range of devices, simplifying integration in various RF and microwave systems.

Number of Terminals: 10

Having 10 terminals provides flexibility for connections, allowing for diverse configuration options and making it easier to interface with other components.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, this amplifier can function reliably in elevated thermal environments, ensuring stability and performance in demanding applications.

Minimum Operating Temperature: -40 °C

This amplifier can operate in extreme cold conditions down to -40 °C, making it ideal for outdoor and extreme climate applications.

Maximum Supply Current: 95 mA

A maximum supply current of 95 mA ensures efficient power consumption, optimizing performance without compromising battery life in portable devices.

Mounting Feature: SURFACE MOUNT

The surface mount design facilitates compact PCB layouts and automated production processes, making it suitable for high-density applications and reducing assembly costs.

Technical Specifications

RF & Microwave Amplifiers BGU7052,118 attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

Mounting Feature:

No. of Functions:

1

No. of Terminals:

10

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Package Equivalence Code:

SOLCC10,.12,20

Power Supplies (V):

3.3

Sub-Category:

RF/Microwave Amplifiers

Maximum Supply Current:

95 mA

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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