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BGU7008

NXP Semiconductors

BGU7008 by NXP Semiconductors

BGU7008 by NXP Semiconductors is a narrow band low power RF amplifier with a gain of 16 dB, operating b/w 1559 MHz and 1610 MHz. It withstands temperatures from -40 °C to 125 °C and handles up to 0 dBm input power. Ideal for RF applications in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,834 parts In-Stock

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2,834

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Anansix

USA . 1,038 parts In-Stock

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1,038

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Digiode

USA . 569 parts In-Stock

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569

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 344 parts In-Stock

1+ parts

$0.447

100+ parts

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$0.430

344

$0.447

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$0.430

Northwest PG Solutions

USA . 2,155 parts In-Stock

1+ parts

$0.492

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$0.434

2,155

$0.492

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$0.434

One Stop Electronics

USA . 1,521 parts In-Stock

1+ parts

$16.000

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1,521

$16.000

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Infinite Electronics LLP (Excess)

. 5,757 parts In-Stock

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5,757

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UNI Independent Distributors

Spain . 4,003 parts In-Stock

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4,003

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Corphita

USA . 1,657 parts In-Stock

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1,657

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Overview

Unlock superior communication performance with the BGU7008 from NXP Semiconductors. Renowned for quality and innovation, NXP delivers this narrowband low-power RF amplifier that thrives in extreme temperatures, ensuring reliable operation wherever your application takes you. Enjoy robust signal gain and efficiency across vital frequencies, making it ideal for satellite communications and IoT devices. Elevate your projects with a trusted partner that puts precision at the forefront!

Feature Benefit Bullets

Maximum Input Power (CW): 0 dBm

This amplifier is designed to handle a maximum input power of 0 dBm, making it suitable for low-power applications where signal integrity is paramount.

Construction: COMPONENT

Being a component type amplifier, it allows for easier integration into various systems and customization options for different applications.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125 °C, this amplifier is capable of functioning in high-temperature environments, ensuring reliability in demanding conditions.

Minimum Operating Temperature: -40 °C

A minimum operating temperature of -40 °C ensures this amplifier can operate reliably in extreme cold, making it suitable for harsh outdoor applications.

Terminal Finish: TIN

The TIN terminal finish provides good corrosion resistance and ensures excellent electrical conductivity, contributing to the overall performance and durability of the amplifier.

RF or Microwave Device Type: NARROW BAND LOW POWER

As a narrow band low power device, it is ideal for applications that require focused frequency performance without the interference of wideband signals.

Characteristic Impedance: 50 ohm

With a characteristic impedance of 50 ohms, this amplifier is optimized for standard RF and microwave applications, ensuring compatibility with a wide range of systems.

Gain: 16 dB

A gain of 16 dB provides substantial amplification for weak signals, making this amplifier effective in extending signal range and improving communication reliability.

Minimum Operating Frequency: 1559 MHz

Operating at a minimum frequency of 1559 MHz, this amplifier is tailored for specific frequency applications, ensuring minimal signal loss and optimal performance.

Maximum Operating Frequency: 1610 MHz

With a maximum frequency of 1610 MHz, it covers a critical range of signals, making it perfect for applications in telemetry and communication systems.

Technical Specifications

RF & Microwave Amplifiers BGU7008 attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

16 dB

Maximum Input Power (CW):

0 dBm

JESD-609 Code:

e3

Maximum Operating Frequency:

1610 MHz

Minimum Operating Frequency:

1559 MHz

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

RF or Microwave Device Type:

Terminal Finish:

TIN

Trade Compliance

BGU7008 RF & Microwave trade compliance attributes, and parameters.

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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