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BGU7004

NXP Semiconductors

BGU7004 by NXP Semiconductors

BGU7004 by NXP Semiconductors is a narrow band low power RF amplifier with a gain of 13 dB, operating b/w 1559 MHz and 1610 MHz. It withstands temperatures from -40 °C to 125 °C and handles up to 0 dBm input power. Ideal for RF applications in harsh environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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Flip Electronics

USA . 205,000 parts In-Stock

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Anansix

USA . 1,683 parts In-Stock

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ACDS - Activité Composants Distribution Service

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Bristol Electronics

USA . 1,443 parts In-Stock

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Dan-Mar Components

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Digiode

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Vyrian

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One Stop Electronics

USA . 948 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Microchip USA

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Formix International (Excess)

India . 5,000 parts In-Stock

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Authorized Procurement Solutions

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Northwest PG Solutions

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Corphita

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Native Components

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Kepictronics

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Overview

Elevate your wireless communication projects with the BGU7004 from NXP Semiconductors, a trusted leader in RF technology. This narrow band low power amplifier ensures exceptional signal clarity and reliability, even in extreme conditions. With its broad operating temperature range and robust design, it’s perfect for applications in IoT, satellite communications, and more. Unlock unparalleled performance and efficiency, enhancing your devices' connectivity like never before!

Feature Benefit Bullets

Maximum Input Power (CW): 0 dBm

This low maximum input power makes the amplifier ideal for sensitive applications, ensuring minimal signal distortion.

Construction: COMPONENT

As a component-level device, this amplifier offers flexibility in design integration for various RF and microwave applications.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature indicates robust thermal performance, suitable for demanding environments.

Minimum Operating Temperature: -40 °C

With a wide operating temperature range, this product can function reliably in extreme conditions, making it versatile for outdoor use.

Terminal Finish: PURE TIN

The pure tin finish ensures excellent solderability and corrosion resistance, enhancing the longevity of the device.

RF or Microwave Device Type: NARROW BAND LOW POWER

Designed for narrow band applications, this amplifier minimizes interference and increases signal clarity for specific frequency ranges.

Characteristic Impedance: 50 ohm

The standard 50 ohm impedance guarantees compatibility with common RF and microwave systems, simplifying integration.

Gain: 13 dB

A gain of 13 dB provides significant amplification, making it effective for low-power signal boosting in communication systems.

Minimum Operating Frequency: 1559 MHz

Starting from 1559 MHz, this amplifier is tailored for applications in higher frequency bands, ensuring reliable performance.

Maximum Operating Frequency: 1610 MHz

With a maximum operating frequency of 1610 MHz, this amplifier is suitable for various narrow band communication systems.

Technical Specifications

RF & Microwave Amplifiers BGU7004 attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

13 dB

Maximum Input Power (CW):

0 dBm

Maximum Operating Frequency:

1610 MHz

Minimum Operating Frequency:

1559 MHz

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

RF or Microwave Device Type:

Terminal Finish:

PURE TIN

Trade Compliance

BGU7004 RF & Microwave trade compliance attributes, and parameters.

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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