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BGU7041

NXP Semiconductors

BGU7041 by NXP Semiconductors

BGU7041 from NXP Semiconductors is a wideband low-power RF amplifier with a gain of 10 dB and operates b/w 40 MHz and 1000 MHz. It supports a max input power of 10 dBm and functions effectively in temperatures from -10 °C to 70 °C. Ideal for RF applications, it features a characteristic impedance of 75 ohm.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Anansix

USA . 1,852 parts In-Stock

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Digiode

USA . 1,286 parts In-Stock

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Vyrian

USA . 478 parts In-Stock

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478

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One Stop Electronics

USA . 1,342 parts In-Stock

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$15.000

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Corphita

USA . 1,570 parts In-Stock

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Northwest PG Solutions

USA . 848 parts In-Stock

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UNI Independent Distributors

Spain . 710 parts In-Stock

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Native Components

USA . 681 parts In-Stock

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Kepictronics

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Overview

Unleash the potential of your RF applications with the BGU7041 from NXP Semiconductors, a trusted leader in innovative technology. This wideband low-power amplifier delivers exceptional performance across a range of frequencies, ensuring crystal-clear signal quality for diverse applications. With robust construction and reliable operation from -10 °C to 70 °C, it empowers engineers to design high-quality solutions that enhance connectivity and efficiency, making it an invaluable asset in any project.

Feature Benefit Bullets

Maximum Input Power (CW): 10 dBm

This product's maximum input power allows for robust handling of signal levels, making it suitable for a variety of RF applications without distortion.

Construction: COMPONENT

Designed as a component, this amplifier is versatile and can be easily integrated into different RF systems or setups.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70 °C, this amplifier is reliable for extended use in high-temperature environments.

Minimum Operating Temperature: -10 °C

The ability to function in temperatures as low as -10 °C ensures performance across a wide range of environmental conditions.

Terminal Finish: Tin (Sn)

The tin finish on terminals enhances corrosion resistance, ensuring long-term durability and stable connectivity.

RF or Microwave Device Type: WIDE BAND LOW POWER

As a wideband low power device, it is excellent for applications requiring operation over a broad frequency range with minimal power consumption.

Characteristic Impedance: 75 ohm

With a characteristic impedance of 75 ohms, this amplifier is ideal for matching with standard RF systems, minimizing signal reflections.

Gain: 10 dB

A gain of 10 dB provides sufficient amplification for weak signals, enhancing overall system performance and reliability.

Minimum Operating Frequency: 40 MHz

Starting from a minimum operating frequency of 40 MHz, this amplifier caters to a wide range of communication applications, including broadcasting.

Maximum Operating Frequency: 1000 MHz

The ability to function up to 1000 MHz makes this product suitable for modern RF applications, including those used in telecommunications.

Technical Specifications

RF & Microwave Amplifiers BGU7041 attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

Characteristic Impedance:

75 ohm

Construction:

COMPONENT

Gain:

10 dB

Maximum Input Power (CW):

10 dBm

JESD-609 Code:

e3

Maximum Operating Frequency:

1000 MHz

Minimum Operating Frequency:

40 MHz

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-10 Cel

RF or Microwave Device Type:

Terminal Finish:

Tin (Sn)

Trade Compliance

BGU7041 RF & Microwave trade compliance attributes, and parameters.

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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