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BGU7003W

NXP Semiconductors

BGU7003W by NXP Semiconductors

BGU7003W by NXP Semiconductors is a wideband low-power RF amplifier with a gain of 9 dB, operating b/w 40 MHz and 6000 MHz. It withstands temperatures from -40 °C to 85 °C and features pure tin terminals. Ideal for RF applications requiring compact, efficient amplification.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,440 parts In-Stock

1+ parts

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4,440

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Vyrian

USA . 3,593 parts In-Stock

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3,593

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Anansix

USA . 853 parts In-Stock

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853

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 41 parts In-Stock

1+ parts

$1.925

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41

$1.925

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Northwest PG Solutions

USA . 2,215 parts In-Stock

1+ parts

$2.117

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2,215

$2.117

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One Stop Electronics

USA . 1,571 parts In-Stock

1+ parts

$16.000

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1,571

$16.000

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UNI Independent Distributors

Spain . 6,010 parts In-Stock

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6,010

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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Alle Elektronik GmbH

Germany . 3,690 parts In-Stock

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3,690

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Corphita

USA . 1,724 parts In-Stock

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1,724

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Overview

Unlock powerful performance with the BGU7003W from NXP Semiconductors, a leader in innovative RF solutions. This wide-band low-power amplifier delivers exceptional gain and operates seamlessly across a vast frequency range, making it ideal for diverse applications—from telecommunications to broadcasting. With NXP's commitment to quality and reliability, enjoy enhanced efficiency and longevity in your designs, ensuring you stay ahead in a competitive market.

Feature Benefit Bullets

Construction: COMPONENT

The component construction indicates a durable design, ensuring reliable performance in various applications.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this amplifier can perform well in demanding environments, making it suitable for industrial applications.

Minimum Operating Temperature: -40 °C

The wide temperature range allows this product to operate effectively in extreme cold conditions, ideal for outdoor and harsh operating environments.

Terminal Finish: PURE TIN

The pure tin terminal finish provides excellent corrosion resistance and ensures reliable connectivity over time.

RF or Microwave Device Type: WIDE BAND LOW POWER

The wideband low power design makes this amplifier versatile for a variety of RF and microwave applications, expanding its usability across different technologies.

Characteristic Impedance: 50 ohm

The standard 50 ohm impedance ensures compatibility with a wide range of RF systems, simplifying integration into existing setups.

Gain: 9 dB

A gain of 9 dB provides sufficient amplification for many applications, effectively improving signal strength without introducing significant distortion.

Minimum Operating Frequency: 40 MHz

Starting from 40 MHz, this amplifier can handle lower frequency signals, making it suitable for various communication and broadcasting needs.

Maximum Operating Frequency: 6000 MHz

With a maximum frequency of 6000 MHz, this product can support high-frequency applications, enhancing its performance in advanced RF technologies.

Technical Specifications

RF & Microwave Amplifiers BGU7003W attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

9 dB

Maximum Operating Frequency:

6000 MHz

Minimum Operating Frequency:

40 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

RF or Microwave Device Type:

Terminal Finish:

PURE TIN

Trade Compliance

BGU7003W RF & Microwave trade compliance attributes, and parameters.

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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