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BGU7005

NXP Semiconductors

BGU7005 by NXP Semiconductors

The NXP Semiconductors BGU7005 is a narrow band low power RF amplifier with 14 dB gain. Operating b/w -40°C to 85°C, it has a frequency range of 1713-1851 MHz and impedance of 50 ohm. Ideal for RF & microwave applications requiring compact components with high performance.

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Greenchips

USA . 8,727 parts In-Stock

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Anansix

USA . 2,416 parts In-Stock

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Vyrian

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Digiode

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Cyclops Electronics Ltd

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Cogito LLC

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Nova Conductors

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One Stop Electronics

USA . 1,020 parts In-Stock

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Ampacity Inc.

Singapore . 409 parts In-Stock

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AZTECH Wire

Italy . 468 parts In-Stock

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Kepictronics

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Formix International (Excess)

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S.R.D Solutions

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A-Z Elektronik GmbH

Germany . 2,520 parts In-Stock

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Alle Elektronik GmbH

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Corphita

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Aranea Global

USA . 50 parts In-Stock

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GreenTree Electronics

Israel . 50 parts In-Stock

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Overview

Elevate your RF and microwave amplifier game with the BGU7005 by NXP Semiconductors. Crafted with precision and expertise, this component offers unparalleled quality and performance. Ideal for narrow band low power applications, this amplifier boasts a gain of 14 dB and operates within a frequency range of 1713 MHz to 1851 MHz. Experience seamless connectivity and enhanced signal strength with the BGU7005, a must-have for any RF enthusiast looking to elevate their projects to new heights.

Feature Benefit Bullets

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85°C ensures stable performance even in high temperature environments, making this amplifier suitable for use in a variety of conditions.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40°C allows this amplifier to function in cold environments without any issues, ensuring reliability and performance in a wide range of temperatures.

Terminal Finish: TIN

The TIN terminal finish provides good conductivity and corrosion resistance, enhancing the durability and longevity of the amplifier.

Characteristic Impedance: 50 ohm

The 50 ohm characteristic impedance matches common RF systems, allowing for easy integration and compatibility with existing equipment.

Gain: 14 dB

With a gain of 14 dB, this amplifier can boost the input signal by a significant amount, improving the overall signal strength and quality in the RF or microwave system.

Minimum Operating Frequency: 1713 MHz

The low minimum operating frequency of 1713 MHz makes this amplifier suitable for applications requiring signal amplification in the lower frequency range, providing flexibility and versatility in system design.

Maximum Operating Frequency: 1851 MHz

The high maximum operating frequency of 1851 MHz allows this amplifier to amplify signals in the higher frequency range, making it ideal for a wide range of RF and microwave applications.

Technical Specifications

RF & Microwave Amplifiers BGU7005 attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

Additional Features:

LOW NOISE

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

14 dB

JESD-609 Code:

e3

Maximum Operating Frequency:

1851 MHz

Minimum Operating Frequency:

1713 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

RF or Microwave Device Type:

Terminal Finish:

TIN

Trade Compliance

BGU7005 RF & Microwave trade compliance attributes, and parameters.

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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