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BGU7005/Z/N2115

NXP Semiconductors

BGU7005/Z/N2115 by NXP Semiconductors

The NXP Semiconductors BGU7005/Z/N2115 is a RF & Microwave Amplifier with 14 dB Gain, operating b/w 1559-1610 MHz. It has a Max Input Power of 0 dBm and VSWR of 1.22, suitable for narrow band low power applications. This component is constructed with plastic/epoxy material and features surface mounting for easy integration in various electronic devices.

Median Price

$0.240

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 245,000 parts In-Stock

1+ parts

$0.240

100+ parts

$0.240

1k+ parts

$0.230

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245,000

$0.240

$0.240

$0.230

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 15 parts In-Stock

1+ parts

$0.242

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15

$0.242

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Digiode

USA . 179 parts In-Stock

1+ parts

$0.270

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179

$0.270

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Vyrian

USA . 208,460 parts In-Stock

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208,460

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VNN

France . 4,220 parts In-Stock

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4,220

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Anansix

USA . 1,885 parts In-Stock

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1,885

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 4,351 parts In-Stock

1+ parts

$0.256

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4,351

$0.256

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QUARKTWIN TECHNOLOGY LTD

USA . 20,444 parts In-Stock

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20,444

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UNI Independent Distributors

Spain . 4,502 parts In-Stock

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4,502

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Overview

Enhance your RF and microwave applications with the BGU7005/Z/N2115 by NXP Semiconductors. With a focus on quality and innovation, NXP Semiconductors is a trusted manufacturer in the industry. This component offers a wide range of benefits, from its narrow band low power design to its compact surface mount package. Whether you're in need of amplification or signal processing, this product provides exceptional performance and reliability. Elevate your projects with the superior value and advantages that only NXP Semiconductors can deliver.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for various applications.

Maximum Input Power (CW): 0 dBm

With a maximum input power of 0 dBm, this amplifier can handle low power signals efficiently, ensuring reliable performance.

Screening Level: IEC-60134

Compliance with IEC-60134 screening level ensures high quality and reliability of the product, making it a dependable choice for RF and microwave applications.

Maximum Voltage Standing Wave Ratio: 1.22

The low VSWR of 1.22 indicates efficient power transfer and minimal signal loss, ensuring optimal performance of the amplifier.

Construction: COMPONENT

The component-based construction allows for easy integration into existing systems, making it a versatile choice for various setups.

Power Supplies (V): 1.8

Operating at 1.8V, this amplifier is efficient in terms of power consumption, making it suitable for low power applications.

No. of Terminals: 6

With 6 terminals, this amplifier offers flexibility in connection options, allowing for versatile usage in different circuit configurations.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85°C ensures the amplifier can withstand harsh environmental conditions, enhancing its durability.

Minimum Operating Temperature: -40 °C

With a minimum operating temperature of -40°C, this amplifier can be used in a wide range of temperature environments without compromising performance.

Maximum Supply Current: 14.4 mA

The low maximum supply current of 14.4 mA indicates efficient power usage, making it an energy-efficient choice for RF and microwave systems.

RF or Microwave Device Type: NARROW BAND LOW POWER

Being a narrow band low power device, this amplifier is specifically designed for applications requiring focused frequency range and low power consumption.

Characteristic Impedance: 50 ohm

The 50 ohm characteristic impedance is a standard in RF and microwave applications, ensuring compatibility and reliable signal transmission.

Gain: 14 dB

With a gain of 14 dB, this amplifier boosts the strength of incoming signals, improving overall performance and signal clarity.

Minimum Operating Frequency: 1559 MHz

The low minimum operating frequency of 1559 MHz allows for compatibility with a wide range of RF and microwave devices, making it a versatile choice.

Mounting Feature: SURFACE MOUNT

The surface mounting feature offers easy installation and space-saving benefits, making it suitable for compact and crowded PCB layouts.

Maximum Operating Frequency: 1610 MHz

The high maximum operating frequency of 1610 MHz provides versatility in terms of frequency range, making it suitable for various RF and microwave applications.

Technical Specifications

RF & Microwave Amplifiers BGU7005/Z/N2115 attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

14 dB

Maximum Input Power (CW):

0 dBm

Mounting Feature:

No. of Functions:

1

No. of Terminals:

6

Maximum Operating Frequency:

1610 MHz

Minimum Operating Frequency:

1559 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Package Equivalence Code:

SOLCC6,.04,20

Power Supplies (V):

1.8

RF or Microwave Device Type:

Screening Level:

Maximum Supply Current:

14.4 mA

Maximum Voltage Standing Wave Ratio:

1.22

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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