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BGA612H6327XTSA1

Infineon Technologies

BGA612H6327XTSA1 by Infineon Technologies

Infineon's BGA612H6327XTSA1 is a wide band low power RF amplifier with 16.3 dB gain and 10 dBm max input power. Operating from -65 to 150°C, it covers frequencies from 0 to 2800 MHz. Ideal for RF & microwave applications requiring high gain in a compact form factor.

Median Price

$1.435

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 97 parts In-Stock

1+ parts

$0.620

100+ parts

-

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97

$0.620

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Bristol Electronics

USA . 31 parts In-Stock

1+ parts

$2.250

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31

$2.250

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Semi Source

USA . 39,000 parts In-Stock

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39,000

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Vyrian

USA . 9,693 parts In-Stock

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9,693

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VNN

France . 4,524 parts In-Stock

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4,524

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Chip Stock

USA . 2,920 parts In-Stock

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2,920

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Digiode

USA . 340 parts In-Stock

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340

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Bastille Electronics

Australia . 800 parts In-Stock

1+ parts

$0.620

100+ parts

$0.589

1k+ parts

$0.560

10k+ parts

$0.552

800

$0.620

$0.589

$0.560

$0.552

Argo Parts USA

USA . 2,324 parts In-Stock

1+ parts

$0.620

100+ parts

-

1k+ parts

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10k+ parts

$0.601

2,324

$0.620

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-

$0.601

Continental Prestige Electronics

USA . 486 parts In-Stock

1+ parts

$0.620

100+ parts

-

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10k+ parts

$0.608

486

$0.620

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-

$0.608

Advanced Electronics

New Zealand . 500 parts In-Stock

1+ parts

$1.240

100+ parts

$1.128

1k+ parts

$1.017

10k+ parts

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500

$1.240

$1.128

$1.017

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Corohmni

South Africa . 537 parts In-Stock

1+ parts

$1.756

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537

$1.756

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Modulus Dynamics

Lithuania . 4,234 parts In-Stock

1+ parts

$2.919

100+ parts

$2.802

1k+ parts

$2.685

10k+ parts

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4,234

$2.919

$2.802

$2.685

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Ampacity Inc.

Singapore . 583 parts In-Stock

1+ parts

$6.000

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583

$6.000

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AZTECH Wire

Italy . 523 parts In-Stock

1+ parts

$16.088

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523

$16.088

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Component Stockers USA

USA . 690 parts In-Stock

1+ parts

$99.990

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690

$99.990

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Perfect Parts

USA . 21,772 parts In-Stock

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21,772

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Corphita

USA . 24 parts In-Stock

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24

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Overview

Unlock the full potential of your RF and microwave applications with the BGA612H6327XTSA1 by Infineon Technologies. Known for their high-quality products, Infineon Technologies brings you a wide band low power amplifier that offers a gain of 16.3 dB and a maximum input power of 10 dBm. With a temperature range from -65°C to 150°C, this component is designed to deliver reliable performance in extreme conditions. Whether you're working on communications, aerospace, or industrial projects, this amplifier provides the value, benefits, and advantages you need to take your designs to the next level. Trust Infineon Technologies to elevate your RF and microwave amplification needs.

Feature Benefit Bullets

Maximum Input Power (CW): 10 dBm

With a high maximum input power of 10 dBm, this amplifier can handle strong input signals without getting damaged, making it a reliable choice for various applications.

Construction: COMPONENT

Being a component-based amplifier allows for easy integration into existing systems or circuits, increasing versatility and flexibility in design.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C ensures that this amplifier can operate effectively even in extreme temperature conditions, making it suitable for a wide range of environments.

Minimum Operating Temperature: -65 °C

With a low minimum operating temperature of -65°C, this amplifier can function reliably in cold environments without any performance degradation.

Terminal Finish: Tin (Sn)

The tin terminal finish provides excellent solderability and corrosion resistance, ensuring secure connections and long-term reliability in various applications.

RF or Microwave Device Type: WIDE BAND LOW POWER

Being a wide band low power amplifier, this product offers a broad frequency range of operation while consuming minimal power, making it suitable for diverse RF and microwave applications.

Characteristic Impedance: 50 ohm

The 50 ohm characteristic impedance ensures compatibility with a wide range of RF systems and components, allowing for easy integration and improved signal transmission efficiency.

Gain: 16.3 dB

With a high gain of 16.3 dB, this amplifier can significantly boost the strength of input signals, improving overall system performance and signal quality.

Minimum Operating Frequency: 0 MHz

The ability to operate at a minimum frequency of 0 MHz makes this amplifier suitable for a wide range of applications, including those requiring low-frequency signal amplification.

Maximum Operating Frequency: 2800 MHz

With a high maximum operating frequency of 2800 MHz, this amplifier can handle a wide range of RF and microwave signals, making it a versatile choice for various communication and signal processing applications.

Technical Specifications

RF & Microwave Amplifiers BGA612H6327XTSA1 attributes and parameters. Explore more RF & Microwave Amplifiers devices from Infineon Technologies

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

16.3 dB

Maximum Input Power (CW):

10 dBm

JESD-609 Code:

e3

Maximum Operating Frequency:

2800 MHz

Minimum Operating Frequency:

0 MHz

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

RF or Microwave Device Type:

Terminal Finish:

Tin (Sn)

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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