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MMZ09312BT1

NXP Semiconductors

MMZ09312BT1 by NXP Semiconductors

The NXP Semiconductors MMZ09312BT1 is a wide band medium power RF amplifier with 29 dB gain, operating from 400 MHz to 1000 MHz. It has a max input power of 14 dBm and requires a 5V power supply with a max current draw of 83 mA. Ideal for applications requiring surface mount components in RF and microwave systems.

Median Price

$4.935

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

MMZ09312BT1 by NXP Semiconductors
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Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 208 parts In-Stock

1+ parts

$6.310

100+ parts

$3.560

1k+ parts

$3.360

10k+ parts

-

208

$6.310

$3.560

$3.360

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Verical

USA . 208 parts In-Stock

1+ parts

-

100+ parts

$3.560

1k+ parts

$3.360

10k+ parts

-

208

-

$3.560

$3.360

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 300 parts In-Stock

1+ parts

$3.747

100+ parts

-

1k+ parts

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300

$3.747

-

-

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NAC Semi

USA . 36 parts In-Stock

1+ parts

$4.250

100+ parts

-

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36

$4.250

-

-

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Digiode

USA . 1,999 parts In-Stock

1+ parts

$5.158

100+ parts

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1,999

$5.158

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-

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Vyrian

USA . 4,488 parts In-Stock

1+ parts

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4,488

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Anansix

USA . 2,770 parts In-Stock

1+ parts

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2,770

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Flip Electronics

USA . 710 parts In-Stock

1+ parts

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710

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Inventory MP

USA . 87 parts In-Stock

1+ parts

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87

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Bristol Electronics

USA . 87 parts In-Stock

1+ parts

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87

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 426 parts In-Stock

1+ parts

$1.933

100+ parts

-

1k+ parts

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426

$1.933

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-

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Aztec Data Supply Inc.

USA . 416 parts In-Stock

1+ parts

$2.313

100+ parts

-

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416

$2.313

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Advanced Electronics

New Zealand . 200 parts In-Stock

1+ parts

$2.808

100+ parts

$2.555

1k+ parts

$2.303

10k+ parts

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200

$2.808

$2.555

$2.303

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Ampacity Inc.

Singapore . 143 parts In-Stock

1+ parts

$3.030

100+ parts

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143

$3.030

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-

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Semicontronic

India . 143 parts In-Stock

1+ parts

$3.030

100+ parts

$2.954

1k+ parts

$2.939

10k+ parts

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143

$3.030

$2.954

$2.939

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Aranea Global

USA . 2,000 parts In-Stock

1+ parts

$3.672

100+ parts

-

1k+ parts

$3.525

10k+ parts

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2,000

$3.672

-

$3.525

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Continental Prestige Electronics

USA . 6,327 parts In-Stock

1+ parts

$3.747

100+ parts

-

1k+ parts

-

10k+ parts

$3.672

6,327

$3.747

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-

$3.672

Argo Parts USA

USA . 4,147 parts In-Stock

1+ parts

$3.747

100+ parts

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4,147

$3.747

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Corphita

USA . 2,902 parts In-Stock

1+ parts

$4.887

100+ parts

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2,902

$4.887

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AZTECH Wire

Italy . 855 parts In-Stock

1+ parts

$6.417

100+ parts

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855

$6.417

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iodParts Technologies Inc.

India . 10,000 parts In-Stock

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10,000

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Perfect Parts

USA . 6,831 parts In-Stock

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6,831

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A-Z Elektronik GmbH

Germany . 5,744 parts In-Stock

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5,744

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UNI Independent Distributors

Spain . 4,759 parts In-Stock

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4,759

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Lixinc

USA . 3,672 parts In-Stock

1+ parts

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3,672

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

1+ parts

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100+ parts

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3,000

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Overview

Elevate your RF and microwave amplifier performance with the MMZ09312BT1 by NXP Semiconductors. This wide band medium power device offers a gain of 29 dB, making it perfect for a variety of applications. With a maximum input power of 14 dBm and a construction that ensures durability, this component delivers outstanding quality and reliability. Whether you're looking to enhance communication systems or improve signal processing, the MMZ09312BT1 provides unparalleled value and benefits to customers seeking top-notch performance in their RF amplifiers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material makes the amplifier lightweight and durable, ideal for portable or rugged applications.

Maximum Input Power (CW): 14 dBm

With a high maximum input power, this amplifier can handle strong signals without distortion, ensuring reliable performance.

Power Supplies (V): 5

Operating at a low voltage of 5V, this amplifier is energy-efficient and suitable for a variety of power sources.

Technology: BIPOLAR

Utilizing bipolar technology, this amplifier offers stable performance and high linearity, making it suitable for a wide range of RF applications.

Characteristic Impedance: 50 ohm

With a standard impedance of 50 ohm, this amplifier can easily be integrated into existing RF systems or setups.

Gain: 29 dB

With a high gain of 29 dB, this amplifier can boost signal strength effectively, improving overall system performance.

Technical Specifications

RF & Microwave Amplifiers MMZ09312BT1 attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

29 dB

Maximum Input Power (CW):

14 dBm

JESD-609 Code:

e3

Mounting Feature:

No. of Functions:

1

No. of Terminals:

12

Maximum Operating Frequency:

1000 MHz

Minimum Operating Frequency:

400 MHz

Package Body Material:

Package Equivalence Code:

LCC12,.12SQ,20

Power Supplies (V):

5

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Amplifiers

Maximum Supply Current:

83 mA

Technology:

Terminal Finish:

MATTE TIN

Trade Compliance

MMZ09312BT1 RF & Microwave trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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