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CGD1040HI,112

NXP Semiconductors

CGD1040HI,112 by NXP Semiconductors

CGD1040HI,112 by NXP Semiconductors is a hybrid RF amplifier designed for high-performance applications. It operates at 24V with a max current of 460mA and withstands temperatures from -20 °C to 100 °C. Ideal for demanding RF and microwave tasks, it ensures reliability in various environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Anansix

USA . 2,435 parts In-Stock

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2,435

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Vyrian

USA . 2,400 parts In-Stock

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2,400

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Digiode

USA . 1,829 parts In-Stock

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1,829

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AZTECH Wire

Italy . 1,168 parts In-Stock

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$13.170

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$13.170

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One Stop Electronics

USA . 945 parts In-Stock

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$19.000

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945

$19.000

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Component Stockers USA

USA . 403 parts In-Stock

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$99.990

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403

$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 19,593 parts In-Stock

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19,593

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Microchip USA

USA . 7,134 parts In-Stock

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7,134

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UNI Independent Distributors

Spain . 6,119 parts In-Stock

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Northwest PG Solutions

USA . 2,173 parts In-Stock

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Corphita

USA . 831 parts In-Stock

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831

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Native Components

USA . 78 parts In-Stock

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78

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Overview

Unlock superior performance with the CGD1040HI,112 RF & Microwave Amplifier from NXP Semiconductors. Renowned for excellence and innovation, NXP delivers unmatched reliability and cutting-edge technology in every component. Designed for demanding environments, this amplifier excels in efficiency and thermal stability, making it ideal for telecommunications, industrial applications, and more. Experience enhanced signal integrity and robust operation that elevate your projects to new heights!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body provides durability and resistance to environmental factors, making it suitable for various applications in RF and microwave technology.

Power Supplies (V): 24

A power supply requirement of 24V allows for compatibility with standard RF systems and equipment, providing efficient operation across a wide range of applications.

Maximum Operating Temperature: 100 °C

With a maximum operating temperature of 100 °C, this amplifier can reliably function in high-temperature environments, ensuring long-term performance and stability.

Minimum Operating Temperature: -20 °C

The ability to operate at temperatures as low as -20 °C makes this product suitable for outdoor and cold-environment applications, enhancing its versatility.

Technology: HYBRID

Utilizing hybrid technology, this amplifier combines the benefits of different materials and designs, resulting in improved performance, efficiency, and miniaturization.

Maximum Supply Current: 460 mA

A maximum supply current of 460 mA provides sufficient power for high-performance applications, ensuring the amplifier delivers strong and consistent signal amplification.

Technical Specifications

RF & Microwave Amplifiers CGD1040HI,112 attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

No. of Functions:

1

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-20 Cel

Package Body Material:

Package Equivalence Code:

SOT-115J

Power Supplies (V):

24

Sub-Category:

RF/Microwave Amplifiers

Maximum Supply Current:

460 mA

Technology:

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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