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CGD1046HI,112

NXP Semiconductors

CGD1046HI,112 by NXP Semiconductors

CGD1046HI,112 by NXP Semiconductors is a hybrid RF amplifier designed for high-performance applications. It operates with a supply voltage of 24V and supports temperatures from -20 °C to 100 °C, drawing up to 465mA. Ideal for demanding RF systems, it ensures reliability in various environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Digiode

USA . 4,662 parts In-Stock

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4,662

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ACDS - Activité Composants Distribution Service

France . 4,646 parts In-Stock

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Vyrian

USA . 3,490 parts In-Stock

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3,490

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Anansix

USA . 186 parts In-Stock

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186

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AZTECH Wire

Italy . 465 parts In-Stock

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$13.510

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465

$13.510

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One Stop Electronics

USA . 744 parts In-Stock

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$17.000

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744

$17.000

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Native Components

USA . 703 parts In-Stock

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$50.732

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$48.703

703

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$48.703

Northwest PG Solutions

USA . 172 parts In-Stock

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$55.805

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172

$55.805

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Microchip USA

USA . 496 parts In-Stock

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$1,102.906

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496

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Kepictronics

USA . 63,550 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 19,289 parts In-Stock

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Authorized Procurement Solutions

USA . 4,648 parts In-Stock

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GreenTree Electronics

Israel . 4,470 parts In-Stock

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Corphita

USA . 3,875 parts In-Stock

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3,875

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UNI Independent Distributors

Spain . 1,204 parts In-Stock

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Metaverse IC Inc.

Canada . 600 parts In-Stock

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600

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Overview

Unlock superior performance with the CGD1046HI,112 from NXP Semiconductors. Designed for RF & microwave applications, this amplifier ensures exceptional signal fidelity in demanding environments. With robust temperature resilience and efficient power consumption, it’s perfect for diverse industrial uses. Rely on NXP’s renowned engineering expertise to elevate your projects, driving innovation while enhancing reliability and efficiency. Experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body material ensures a lightweight design while providing good durability and protection against environmental factors, making this amplifier ideal for various applications.

Power Supplies (V): 24

Operating at a standard 24V power supply makes this amplifier compatible with a wide range of systems and applications, simplifying integration into existing setups.

Maximum Operating Temperature: 100 °C

With a maximum operating temperature of 100 °C, this amplifier is capable of functioning effectively in high-temperature environments, enhancing its reliability in demanding applications.

Minimum Operating Temperature: -20 °C

The ability to operate at temperatures as low as -20 °C ensures that this amplifier can function in cold environments, widening its range of potential applications.

Technology: HYBRID

Hybrid technology combines the benefits of both discrete and integrated designs, offering superior performance, compactness, and efficiency, making this amplifier an excellent choice for high-performance applications.

Maximum Supply Current: 465 mA

A maximum supply current of 465 mA allows for a powerful output while still being energy-efficient, making this amplifier suitable for both portable and stationary applications.

Technical Specifications

RF & Microwave Amplifiers CGD1046HI,112 attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

No. of Functions:

1

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-20 Cel

Package Body Material:

Package Equivalence Code:

SOT-115J

Power Supplies (V):

24

Sub-Category:

RF/Microwave Amplifiers

Maximum Supply Current:

465 mA

Technology:

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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