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BGY588C,112

NXP Semiconductors

BGY588C,112 by NXP Semiconductors

BGY588C,112 by NXP Semiconductors is a hybrid RF amplifier designed for high-performance applications. It operates at 24V with a max current of 345mA and withstands temperatures from -20 °C to 100 °C. Ideal for telecom and broadcasting systems, it ensures reliable signal amplification.

Median Price

$2.056

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 550 parts In-Stock

1+ parts

$2.056

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550

$2.056

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Vyrian

USA . 5,210 parts In-Stock

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5,210

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Digiode

USA . 2,550 parts In-Stock

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2,550

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Anansix

USA . 381 parts In-Stock

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381

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip USA

USA . 385 parts In-Stock

1+ parts

$3.084

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385

$3.084

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AZTECH Wire

Italy . 533 parts In-Stock

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$17.290

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533

$17.290

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One Stop Electronics

USA . 454 parts In-Stock

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$24.000

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454

$24.000

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QUARKTWIN TECHNOLOGY LTD

USA . 19,789 parts In-Stock

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19,789

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UNI Independent Distributors

Spain . 5,802 parts In-Stock

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Corphita

USA . 3,626 parts In-Stock

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3,626

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Northwest PG Solutions

USA . 1,691 parts In-Stock

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1,691

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Native Components

USA . 580 parts In-Stock

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580

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Overview

Elevate your RF applications with the BGY588C,112 from NXP Semiconductors—a leader in innovation and reliability. This high-performance amplifier combines robust design with exceptional thermal resilience, ensuring consistent operation in diverse environments. With its efficient power management and compact package, it delivers unparalleled value, empowering your projects with superior signal quality and enhanced performance, making it the ideal choice for demanding applications.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of a durable and lightweight plastic/epoxy package helps enhance the reliability and robustness of the amplifier in various environmental conditions.

Power Supplies (V): 24

A 24V power supply ensures compatibility with common RF applications, providing adequate power to achieve optimal performance and efficiency.

Maximum Operating Temperature: 100 °C

With a maximum operating temperature of 100 °C, this amplifier is suitable for high-temperature environments, ensuring stable performance under challenging conditions.

Minimum Operating Temperature: -20 °C

Operating effectively in temperatures as low as -20 °C makes this amplifier versatile for a range of applications, including outdoor and industrial settings.

Technology: HYBRID

The hybrid technology used in this amplifier combines the benefits of both discrete and integrated components, leading to improved performance, efficiency, and flexibility in design.

Maximum Supply Current: 345 mA

A maximum supply current of 345 mA provides sufficient headroom for high-performance operation, making this amplifier capable of driving demanding load requirements.

Technical Specifications

RF & Microwave Amplifiers BGY588C,112 attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

No. of Functions:

1

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-20 Cel

Package Body Material:

Package Equivalence Code:

SOT-115J

Power Supplies (V):

24

Sub-Category:

RF/Microwave Amplifiers

Maximum Supply Current:

345 mA

Technology:

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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