Loading...

STD724T4

STMicroelectronics

STD724T4 by STMicroelectronics

STD724T4 by STMicroelectronics is an NPN BJT designed for switching applications. It features a max power dissipation of 15W, a collector current of 3A, and operates up to 150 °C. Its compact surface mount design ensures efficient performance in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,750 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,750

-

-

-

-

Tectiva GmbH

Germany . 4,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,500

-

-

-

-

Digiode

USA . 2,540 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,540

-

-

-

-

Anansix

USA . 662 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

662

-

-

-

-

Chip Stock

USA . 225 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

225

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,681 parts In-Stock

1+ parts

$1.015

100+ parts

-

1k+ parts

$0.913

10k+ parts

-

1,681

$1.015

-

$0.913

-

MKK Technologies

India . 662 parts In-Stock

1+ parts

$1.908

100+ parts

-

1k+ parts

-

10k+ parts

-

662

$1.908

-

-

-

DigiPath Technology Company

USA . 662 parts In-Stock

1+ parts

$1.908

100+ parts

-

1k+ parts

-

10k+ parts

-

662

$1.908

-

-

-

AZTECH Wire

Italy . 289 parts In-Stock

1+ parts

$18.810

100+ parts

-

1k+ parts

-

10k+ parts

-

289

$18.810

-

-

-

Kepictronics

USA . 20,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

20,000

-

-

-

-

Corphita

USA . 4,282 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,282

-

-

-

-

Alle Elektronik GmbH

Germany . 1,072 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,072

-

-

-

-

Parana Technologies

USA . 531 parts In-Stock

1+ parts

-

100+ parts

$1.213

1k+ parts

-

10k+ parts

-

531

-

$1.213

-

-

Overview

Elevate your designs with the STD724T4 from STMicroelectronics, a leader in innovative semiconductor solutions. This powerful NPN transistor is engineered for exceptional switching performance, making it perfect for various applications, from consumer electronics to industrial automation. With a robust design and high reliability, you can trust STMicroelectronics to deliver quality that enhances efficiency and longevity, ensuring your projects shine with unparalleled performance and value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package material ensures durability and resistance to environmental factors, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are preferred for high-speed switching and amplification, providing efficient performance in electronic circuits.

Configuration: SINGLE

Single configuration simplifies design and integration into circuits, making it an ideal choice for compact applications.

Transistor Application: SWITCHING

Designed for switching applications, this transistor provides fast switching speeds, enhancing the efficiency of electronic systems.

Surface Mount: YES

Surface mount capability allows for high-density circuit designs and automated assembly processes, reducing overall production costs.

Package Shape: RECTANGULAR

The rectangular shape enables efficient use of PCB space and facilitates easier handling during assembly.

Terminal Form: GULL WING

Gull wing terminals provide good mechanical strength and reliable electrical connections, ensuring long-term performance.

No. of Terminals: 2

With only two terminals, this transistor is easy to integrate into simple circuits, making it suitable for novice and expert applications alike.

Maximum Power Dissipation (Abs): 15 W

A maximum power dissipation of 15 W allows for robust performance in demanding applications without overheating.

Package Style (Meter): SMALL OUTLINE

The small outline package style increases component density on PCBs, making it suitable for space-constrained applications.

Minimum DC Current Gain (hFE): 30

A minimum hFE of 30 ensures sufficient gain for amplifying weak signals, making it effective for various amplification tasks.

Maximum Operating Temperature: 150 °C

This high maximum operating temperature allows the transistor to function reliably in harsh environments.

Maximum Collector-Emitter Voltage: 30 V

A collector-emitter voltage rating of 30 V supports a wide range of applications, enhancing its versatility.

Transistor Element Material: SILICON

Silicon is a widely-used semiconductor material that ensures consistent performance and reliability in electronic components.

Maximum Collector Current (IC): 3 A

With a collector current rating of 3 A, this transistor can handle significant load, making it suitable for power applications.

Terminal Finish: Matte Tin (Sn)

Matte tin terminal finish enhances solderability and corrosion resistance, ensuring reliable connections over time.

Terminal Position: SINGLE

Single terminal positioning simplifies circuit design and layout, enhancing ease of use during assembly.

Nominal Transition Frequency (fT): 100 MHz

A transition frequency of 100 MHz allows for high-speed operation, making this transistor suitable for RF applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) STD724T4 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

30

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

STD724T4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 2