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ULN2803AP

Toshiba

ULN2803AP by Toshiba

Toshiba's ULN2803AP is an 8-bank NPN Darlington transistor array with built-in diode and resistor, ideal for switching applications. Features include VCEsat of 1.6V, hFE min of 1000, and IC max of 0.5A. With a max operating temp of 85°C and VCE max of 50V, it offers reliable performance in various electronic circuits.

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Zilex Electronics Inc.

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Nova Conductors

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LIBRA Elektronik GmbH

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LittleDiode

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Advanced Electronics

New Zealand . 233 parts In-Stock

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Aztec Data Supply Inc.

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AZTECH Wire

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Overview

Enhance your electronic projects with the ULN2803AP by Toshiba, a high-quality Power Bipolar Junction Transistor that brings reliability and efficiency to your designs. With 8 banks of Darlington transistors, built-in diodes, and resistors, this versatile component is perfect for switching applications. Toshiba's reputation for excellence shines through in this product, offering customers outstanding value, benefits, and advantages. Elevate your creations with the ULN2803AP and experience seamless performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used and versatile, allowing for easy integration into circuits.

Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration offers high current gain and built-in diode and resistor components provide added functionality.

Transistor Application: SWITCHING

Designed for switching applications, providing efficient and reliable operation.

Maximum VCEsat: 1.6 V

Low saturation voltage helps in minimizing power losses and improving efficiency.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and placement in circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a secure and reliable connection in circuit boards.

No. of Elements: 8

Multiple elements allow for versatility and flexibility in circuit design.

No. of Terminals: 18

Higher number of terminals provide more connectivity options in circuit layouts.

Package Style (Meter): IN-LINE

In-line package style makes it easy to integrate into existing circuits or designs.

Minimum DC Current Gain (hFE): 1000

High minimum DC current gain ensures stable and consistent performance in various operating conditions.

Maximum Operating Temperature: 85 °C

Can operate at relatively high temperatures, suitable for a wide range of environments.

Maximum Collector-Emitter Voltage: 50 V

A moderate maximum collector-emitter voltage rating provides flexibility in circuit design.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability for the transistor.

Maximum Collector Current (IC): 0.5 A

Allows for moderate current handling capabilities, suitable for various applications.

Terminal Position: DUAL

Dual terminal position provides additional options for connectivity and mounting.

Technical Specifications

Power Bipolar Junction Transistors (BJT) ULN2803AP attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE, BUILT-IN BIAS RESISTOR RATIO IS 1.11

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

1000

JESD-30 Code:

R-PDIP-T18

No. of Elements:

8

No. of Terminals:

18

Maximum Operating Temperature:

85 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

1.6 V

Trade Compliance

ULN2803AP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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