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Toshiba Power Bipolar Junction Transistors (BJT) 7

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Fall Time (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
TTC3710B by Toshiba

TTC3710B

Toshiba

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 12 A;

ISOLATED

12 A

80 V

SINGLE

40

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

30 W

Other Transistors

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

80 MHz

2SA1962O(Q) by Toshiba

2SA1962O(Q)

Toshiba

Toshiba's 2SA1962O(Q) is a PNP BJT transistor with max. power dissipation of 130W, max. collector-emitter voltage of 230V, and max. collector current of 15A. Ideal for amplifier applications due to its single configuration and silicon element material, it operates at up to 150°C temperature with a nominal transition frequency of 30MHz.

COLLECTOR

15 A

230 V

SINGLE

80

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

130 W

Other Transistors

NO

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

30 MHz

2SC5242O(Q) by Toshiba

2SC5242O(Q)

Toshiba

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 30 MHz; Maximum Power Dissipation (Abs): 130 W; Maximum Collector Current (IC): 15 A;

COLLECTOR

15 A

230 V

SINGLE

80

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

130 W

Other Transistors

NO

THROUGH-HOLE

SINGLE

30

AMPLIFIER

SILICON

30 MHz

TTC5460B,Q(S by Toshiba

TTC5460B,Q(S

Toshiba

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 5.5 MHz; Maximum Collector Current (IC): .05 A; Package Body Material: PLASTIC/EPOXY;

.05 A

800 V

SINGLE

15

TO-126

R-PSFM-T3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

5.5 MHz

2SC5171,Q(J by Toshiba

2SC5171,Q(J

Toshiba

2SC5171,Q(J by Toshiba is a NPN BJT transistor with max. Vce of 180V and max. Ic of 2A. It has hFE of 50, ideal for amplifier applications due to its high transition frequency of 200MHz. The package style is flange mount with through-hole terminals in a rectangular shape, making it suitable for various electronic designs.

ISOLATED

2 A

180 V

SINGLE

50

R-PSFM-T3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

NO

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

200 MHz

TTA004B,Q by Toshiba

TTA004B,Q

Toshiba

TTA004B,Q by Toshiba is a PNP BJT transistor with 160V VCE, 0.5V VCEsat, and 1.5A IC. Ideal for amplifier applications, it has a max power dissipation of 10W and hFE of 140. With a package style of FLANGE MOUNT and operating temp up to 150°C, it offers high performance in through-hole configuration.

1.5 A

17 pF

160 V

SINGLE

140

TO-126

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

1.5 W

10 W

NO

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

100 MHz

.5 V

2SA1943N(S1,E,S) by Toshiba

2SA1943N(S1,E,S)

Toshiba

Toshiba's 2SA1943N(S1,E,S) is a PNP BJT with max VCEsat of 3V, ideal for amplifier applications. With a max power dissipation of 150W and max collector-emitter voltage of 230V, it offers high performance in audio amplifiers. Featuring a min hFE of 35 and fT of 30MHz, this transistor ensures efficient signal processing in various electronic circuits.

COLLECTOR

15 A

360 pF

230 V

SINGLE

35

R-XSFM-T3

1

3

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

PNP

150 W

NO

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

30 MHz

3 V