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2SA1962O(Q)

Toshiba

2SA1962O(Q) by Toshiba

Toshiba's 2SA1962O(Q) is a PNP BJT transistor with max. power dissipation of 130W, max. collector-emitter voltage of 230V, and max. collector current of 15A. Ideal for amplifier applications due to its single configuration and silicon element material, it operates at up to 150°C temperature with a nominal transition frequency of 30MHz.

Median Price

$1.918

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$0.957

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$0.917

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Verical

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Overview

Elevate your electronic projects with the 2SA1962O(Q) by Toshiba, a high-quality Power Bipolar Junction Transistor designed for amplification applications. With a maximum power dissipation of 130W and a collector-emitter voltage of 230V, this PNP transistor offers exceptional performance and reliability. Whether you're a hobbyist or a professional, you'll appreciate the value and benefits that Toshiba brings to the table. Trust in Toshiba's reputation for excellence and choose the 2SA1962O(Q) for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good insulation and protection for the transistor, ensuring durability and reliability in various operating conditions.

Polarity or Channel Type: PNP

PNP configuration allows for easy integration into circuits where PNP transistors are required, making this transistor versatile for different applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring high performance and efficiency in amplifying signals.

Maximum Power Dissipation (Abs): 130 W

High maximum power dissipation allows for the transistor to handle large power levels without overheating, making it suitable for high-power applications.

Maximum Collector-Emitter Voltage: 230 V

High maximum collector-emitter voltage rating provides a wide voltage range for operation, making this transistor suitable for various voltage levels in circuits.

Nominal Transition Frequency (fT): 30 MHz

High nominal transition frequency indicates fast switching speeds, which is ideal for applications requiring rapid signal processing.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SA1962O(Q) attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

230 V

Configuration:

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SA1962O(Q) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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