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2SA1385-AZ

Renesas Electronics

2SA1385-AZ by Renesas Electronics

2SA1385-AZ by Renesas Electronics is a PNP Power BJT with max. collector-emitter voltage of 60V and max. collector current of 5A. Ideal for switching applications, it has a min. DC current gain of 50 and can dissipate up to 10W power in a rectangular package style suitable for through-hole mounting.

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Overview

Discover the power and reliability of Renesas Electronics with the 2SA1385-AZ Power Bipolar Junction Transistor. Designed for switching applications, this PNP transistor offers a maximum collector-emitter voltage of 60V and a maximum collector current of 5A. With a minimum DC current gain of 50 and a nominal transition frequency of 140MHz, this transistor ensures high performance and efficiency. Trust in the quality and innovation of Renesas Electronics to meet your needs for reliable electronic components. Elevate your projects with the 2SA1385-AZ and experience the difference in quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the transistor, making it a reliable choice for various applications.

Polarity or Channel Type: PNP

The PNP configuration allows for efficient switching, enhancing the performance of the transistor in electronic circuits.

Configuration: SINGLE

The single configuration simplifies circuit design and installation, making this transistor easy to use for various projects.

Transistor Application: SWITCHING

Designed for switching purposes, this transistor offers fast response times and high reliability in electronic systems.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy mounting and placement, making it convenient to integrate into different devices.

Terminal Form: THROUGH-HOLE

The through-hole terminals provide secure connections and easy soldering, ensuring a stable and robust electrical connection.

Maximum Power Dissipation (Abs): 10 W

With a high maximum power dissipation, this transistor can handle heavy loads and operate efficiently in demanding conditions.

Package Style (Meter): IN-LINE

The in-line package style offers space-saving benefits and easy integration into compact electronic designs.

Minimum DC Current Gain (hFE): 50

With a minimum DC current gain of 50, this transistor provides consistent amplification of the input signal, ensuring stable performance.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows this transistor to function reliably in a wide range of environmental conditions.

Maximum Collector-Emitter Voltage: 60 V

The high maximum voltage rating of 60V ensures that this transistor can handle high voltage applications with ease.

Transistor Element Material: SILICON

Made of silicon, this transistor offers high performance and reliability, making it a suitable choice for various electronic applications.

Maximum Collector Current (IC): 5 A

With a maximum collector current of 5A, this transistor can handle high current loads efficiently without overheating.

Terminal Position: SINGLE

The single terminal position simplifies the installation process and ensures proper connectivity in electronic circuits.

Case Connection: COLLECTOR

The case connection at the collector terminal ensures efficient heat dissipation, prolonging the lifespan of the transistor.

Maximum Time At Peak Reflow Temperature (s): 10

With a maximum time at peak reflow temperature of 10 seconds, this transistor can withstand soldering processes without damage.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260°C ensures reliable soldering and secure connections during assembly.

Nominal Transition Frequency (fT): 140 MHz

With a nominal transition frequency of 140 MHz, this transistor offers high-speed performance and efficient signal processing capabilities.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SA1385-AZ attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Renesas Electronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

50

JESD-30 Code:

R-PSIP-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SA1385-AZ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Renesas Electronics

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