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2SA1943OTU

Onsemi

2SA1943OTU by Onsemi

2SA1943OTU by Onsemi is a PNP BJT transistor with 150W power dissipation, 250V max collector-emitter voltage, and 30MHz transition frequency. Ideal for amplifier applications due to its single configuration and high collector current of 17A.

Median Price

$3.941

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 20 parts In-Stock

1+ parts

$3.400

100+ parts

$2.360

1k+ parts

$2.350

10k+ parts

$2.060

20

$3.400

$2.360

$2.350

$2.060

Arrow

USA . 138 parts In-Stock

1+ parts

$3.557

100+ parts

$2.398

1k+ parts

$2.372

10k+ parts

-

138

$3.557

$2.398

$2.372

-

Mouser Electronics

USA . 3,378 parts In-Stock

1+ parts

$5.220

100+ parts

$2.880

1k+ parts

$2.570

10k+ parts

$2.420

3,378

$5.220

$2.880

$2.570

$2.420

Element14

Singapore . 13,542 parts In-Stock

1+ parts

$5.625

100+ parts

$3.200

1k+ parts

$2.842

10k+ parts

-

13,542

$5.625

$3.200

$2.842

-

Farnell

UK . 4,547 parts In-Stock

1+ parts

$5.692

100+ parts

$3.241

1k+ parts

$2.878

10k+ parts

-

4,547

$5.692

$3.241

$2.878

-

Newark

USA . 3,688 parts In-Stock

1+ parts

$5.870

100+ parts

$2.840

1k+ parts

-

10k+ parts

-

3,688

$5.870

$2.840

-

-

DigiKey

USA . 198 parts In-Stock

1+ parts

$5.980

100+ parts

$2.884

1k+ parts

$2.326

10k+ parts

-

198

$5.980

$2.884

$2.326

-

Verical

USA . 375 parts In-Stock

1+ parts

-

100+ parts

$3.259

1k+ parts

$3.247

10k+ parts

-

375

-

$3.259

$3.247

-

Master Electronics

USA . 375 parts In-Stock

1+ parts

-

100+ parts

$2.770

1k+ parts

$2.270

10k+ parts

$2.240

375

-

$2.770

$2.270

$2.240

RS (Exports)

UK . 215 parts In-Stock

1+ parts

-

100+ parts

$3.941

1k+ parts

$3.259

10k+ parts

-

215

-

$3.941

$3.259

-

Rochester

USA . 18 parts In-Stock

1+ parts

-

100+ parts

$2.320

1k+ parts

$2.070

10k+ parts

$1.950

18

-

$2.320

$2.070

$1.950

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$2.850

100+ parts

-

1k+ parts

-

10k+ parts

-

100

$2.850

-

-

-

Digiode

USA . 2,274 parts In-Stock

1+ parts

$3.230

100+ parts

-

1k+ parts

-

10k+ parts

-

2,274

$3.230

-

-

-

Chip Stock

USA . 51,460 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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51,460

-

-

-

-

Flip Electronics

USA . 2,996 parts In-Stock

1+ parts

-

100+ parts

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2,996

-

-

-

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Vyrian

USA . 2,965 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,965

-

-

-

-

IBS Electronics

USA . 375 parts In-Stock

1+ parts

-

100+ parts

$3.885

1k+ parts

$3.184

10k+ parts

$3.142

375

-

$3.885

$3.184

$3.142

VNN

France . 25 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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25

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 997 parts In-Stock

1+ parts

$0.410

100+ parts

-

1k+ parts

-

10k+ parts

-

997

$0.410

-

-

-

Semicontronic

India . 2,813 parts In-Stock

1+ parts

$1.850

100+ parts

$1.804

1k+ parts

$1.794

10k+ parts

-

2,813

$1.850

$1.804

$1.794

-

Corohmni

South Africa . 275 parts In-Stock

1+ parts

$2.223

100+ parts

-

1k+ parts

-

10k+ parts

-

275

$2.223

-

-

-

Continental Prestige Electronics

USA . 1,087 parts In-Stock

1+ parts

$2.720

100+ parts

$2.000

1k+ parts

-

10k+ parts

-

1,087

$2.720

$2.000

-

-

Aranea Global

USA . 500 parts In-Stock

1+ parts

$2.793

100+ parts

-

1k+ parts

$2.681

10k+ parts

-

500

$2.793

-

$2.681

-

Argo Parts USA

USA . 970 parts In-Stock

1+ parts

$2.850

100+ parts

-

1k+ parts

-

10k+ parts

-

970

$2.850

-

-

-

Advanced Electronics

New Zealand . 2,402 parts In-Stock

1+ parts

$2.907

100+ parts

$2.907

1k+ parts

$2.907

10k+ parts

-

2,402

$2.907

$2.907

$2.907

-

Corphita

USA . 2,523 parts In-Stock

1+ parts

$3.060

100+ parts

-

1k+ parts

-

10k+ parts

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2,523

$3.060

-

-

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Ampacity Inc.

Singapore . 3,018 parts In-Stock

1+ parts

$4.030

100+ parts

-

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-

10k+ parts

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3,018

$4.030

-

-

-

Microchip USA

USA . 3,483 parts In-Stock

1+ parts

$14.280

100+ parts

-

1k+ parts

-

10k+ parts

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3,483

$14.280

-

-

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QUARKTWIN TECHNOLOGY LTD

USA . 14,154 parts In-Stock

1+ parts

-

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14,154

-

-

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Problanco Electronics

Mexico . 6,189 parts In-Stock

1+ parts

-

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-

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6,189

-

-

-

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SupplyDigital Components

Austria . 5,924 parts In-Stock

1+ parts

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100+ parts

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5,924

-

-

-

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TANS Electronics

Latvia . 5,411 parts In-Stock

1+ parts

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5,411

-

-

-

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Kulean Microsystems

USA . 3,135 parts In-Stock

1+ parts

-

100+ parts

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3,135

-

-

-

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Perfect Parts

USA . 1,375 parts In-Stock

1+ parts

-

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-

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-

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1,375

-

-

-

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Supply Digital

USA . 601 parts In-Stock

1+ parts

-

100+ parts

-

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601

-

-

-

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UHIMA Technologies

Türkiye . 376 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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376

-

-

-

-

Authorized Procurement Solutions

USA . 350 parts In-Stock

1+ parts

-

100+ parts

-

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-

10k+ parts

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350

-

-

-

-

Overview

Unleash the power of innovation with the 2SA1943OTU by Onsemi, a top-of-the-line Power Bipolar Junction Transistor that guarantees superior quality and performance. Designed for amplifiers, this PNP transistor offers unrivaled efficiency and reliability, making it an essential component for any project. With Onsemi's renowned expertise and cutting-edge technology, you can trust that this transistor will exceed your expectations in every way, providing unmatched value and benefits for all your electronic needs. Elevate your creations with the 2SA1943OTU and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into circuits requiring this specific type of transistor.

Configuration: SINGLE

The single configuration simplifies circuit design and installation, making it a user-friendly choice.

Transistor Application: AMPLIFIER

Designed for amplifier applications, this transistor delivers reliable and consistent performance in amplifying signals.

Package Shape: RECTANGULAR

The rectangular shape allows for easy placement and mounting in various electronic devices and systems.

Terminal Form: THROUGH-HOLE

The through-hole terminals provide a secure and sturdy connection to the circuit board.

No. of Terminals: 3

With three terminals, this transistor offers flexibility in circuit configurations and connections.

Maximum Power Dissipation (Abs): 150 W

The high power dissipation capability makes this transistor suitable for handling heavy loads and high temperatures.

Package Style (Meter): FLANGE MOUNT

The flange mount style ensures secure mounting and reliable performance in various applications.

Minimum DC Current Gain (hFE): 80

With a minimum DC current gain of 80, this transistor provides consistent amplification of input signals.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows for reliable performance in harsh environments and high-temperature applications.

Maximum Collector-Emitter Voltage: 250 V

The high collector-emitter voltage rating ensures compatibility with a wide range of circuits and systems.

Transistor Element Material: SILICON

The silicon material of the transistor element offers high performance, reliability, and efficiency.

Minimum Operating Temperature: -50 °C

The low minimum operating temperature range allows for use in cold environments without compromising performance.

Maximum Collector Current (IC): 17 A

With a high collector current rating, this transistor can handle heavy loads and currents effectively.

Terminal Finish: MATTE TIN

The matte tin finish provides a corrosion-resistant coating for enhanced durability and longevity.

Terminal Position: SINGLE

The single terminal position simplifies installation and connection to the circuit.

Nominal Transition Frequency (fT): 30 MHz

The high nominal transition frequency allows for efficient signal amplification and performance in high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SA1943OTU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

250 V

Configuration:

Minimum DC Current Gain (hFE):

80

JEDEC-95 Code:

TO-264AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-50 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SA1943OTU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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