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TIP115G

Onsemi

TIP115G by Onsemi

TIP115G by Onsemi is a PNP power BJT with 50W max power dissipation, hFE of 500, and 60V max collector-emitter voltage. Ideal for amplifier applications due to its Darlington configuration with built-in diode and resistor. Package style is flange mount with through-hole terminals.

Median Price

$0.661

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 668 parts In-Stock

1+ parts

$1.560

100+ parts

$0.657

1k+ parts

$0.432

10k+ parts

$0.426

668

$1.560

$0.657

$0.432

$0.426

DigiKey

USA . 303 parts In-Stock

1+ parts

$1.560

100+ parts

$0.658

1k+ parts

$0.471

10k+ parts

$0.372

303

$1.560

$0.658

$0.471

$0.372

Adafruit Industries

USA . 1,000 parts In-Stock

1+ parts

$1.827

100+ parts

$1.663

1k+ parts

$1.498

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-

1,000

$1.827

$1.663

$1.498

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Rochester

USA . 2,863 parts In-Stock

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-

100+ parts

$0.506

1k+ parts

$0.420

10k+ parts

$0.374

2,863

-

$0.506

$0.420

$0.374

Avnet

USA . 1,750 parts In-Stock

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1,750

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Arrow

USA . 1,302 parts In-Stock

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-

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$0.446

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$0.374

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$0.370

1,302

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$0.446

$0.374

$0.370

Verical

USA . 1,300 parts In-Stock

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$0.370

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1,300

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$0.370

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Chip1Stop

Japan . 950 parts In-Stock

1+ parts

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100+ parts

$0.661

1k+ parts

$0.467

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950

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$0.661

$0.467

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Flip Electronics (Authorized)

USA . 42 parts In-Stock

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42

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Distributors (In-Stock)

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Digiode

USA . 1,138 parts In-Stock

1+ parts

$0.393

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-

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1,138

$0.393

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Nova Conductors

Japan . 150 parts In-Stock

1+ parts

$0.459

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150

$0.459

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TME

Poland . 199 parts In-Stock

1+ parts

$1.300

100+ parts

$0.652

1k+ parts

$0.466

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199

$1.300

$0.652

$0.466

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Chip Stock

USA . 21,000 parts In-Stock

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NAC Semi

USA . 7,000 parts In-Stock

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$0.974

10k+ parts

$0.876

7,000

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$0.974

$0.876

Vyrian

USA . 3,282 parts In-Stock

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3,282

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Flip Electronics

USA . 64 parts In-Stock

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64

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 1,162 parts In-Stock

1+ parts

$0.309

100+ parts

$0.301

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$0.300

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1,162

$0.309

$0.301

$0.300

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Corphita

USA . 355 parts In-Stock

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$0.373

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355

$0.373

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Corohmni

South Africa . 133 parts In-Stock

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$0.374

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133

$0.374

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Component Stockers USA

USA . 7,702 parts In-Stock

1+ parts

$0.430

100+ parts

$0.400

1k+ parts

$0.360

10k+ parts

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7,702

$0.430

$0.400

$0.360

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Argo Parts USA

USA . 4,185 parts In-Stock

1+ parts

$0.441

100+ parts

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$0.428

4,185

$0.441

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$0.428

Modulus Dynamics

Lithuania . 18 parts In-Stock

1+ parts

$0.502

100+ parts

$0.497

1k+ parts

$0.482

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18

$0.502

$0.497

$0.482

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Ampacity Inc.

Singapore . 1,064 parts In-Stock

1+ parts

$0.660

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1,064

$0.660

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Aztec Data Supply Inc.

USA . 267 parts In-Stock

1+ parts

$1.006

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267

$1.006

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Advanced Electronics

New Zealand . 1,000 parts In-Stock

1+ parts

$1.827

100+ parts

$1.663

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$1.498

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1,000

$1.827

$1.663

$1.498

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QUARKTWIN TECHNOLOGY LTD

USA . 13,343 parts In-Stock

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Kulean Microsystems

USA . 6,658 parts In-Stock

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SupplyDigital Components

Austria . 4,967 parts In-Stock

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TANS Electronics

Latvia . 4,305 parts In-Stock

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Perfect Parts

USA . 4,012 parts In-Stock

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4,012

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Continental Prestige Electronics

USA . 3,821 parts In-Stock

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$0.490

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3,821

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$0.490

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Problanco Electronics

Mexico . 3,691 parts In-Stock

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3,691

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Robosynatics

Brazil . 450 parts In-Stock

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$61.935

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$61.935

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$61.935

450

-

$61.935

$61.935

$61.935

Lucentia Tech

USA . 450 parts In-Stock

1+ parts

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100+ parts

$61.935

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$61.935

10k+ parts

$61.935

450

-

$61.935

$61.935

$61.935

UHIMA Technologies

Türkiye . 307 parts In-Stock

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307

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Overview

Unleash the power of innovation with the TIP115G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Power Bipolar Junction Transistors that are designed for maximum performance and reliability. The TIP115G is a versatile PNP transistor with a built-in diode and resistor, making it ideal for amplifier applications. With a high DC current gain and impressive power dissipation capabilities, this product offers exceptional value and benefits to customers seeking superior electronic components. Upgrade your projects with the TIP115G and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the transistor lightweight and durable, ideal for use in various electronic applications.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration with other PNP transistors in a circuit, enhancing its compatibility.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration with built-in diode and resistor simplifies circuit design and saves space, making it a cost-effective solution.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring high performance and reliability in amplification tasks.

Package Shape: RECTANGULAR

The rectangular shape of the package facilitates easy mounting and soldering onto circuit boards, offering convenience during assembly.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides strong mechanical connections, making it suitable for rugged environments and ensuring reliable operation.

No. of Terminals: 3

The 3 terminals offer straightforward connections in a circuit, simplifying installation and reducing the chances of wiring errors.

Maximum Power Dissipation (Abs): 50 W

With a high maximum power dissipation of 50W, this transistor can handle demanding applications without the risk of overheating.

Package Style (Meter): FLANGE MOUNT

The flange mount package style enhances thermal performance and provides a secure mounting option for efficient heat dissipation.

Minimum DC Current Gain (hFE): 500

The high minimum DC current gain of 500 ensures stable and consistent amplification, improving the overall performance of the transistor.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150°C, this transistor can withstand elevated temperatures, suitable for industrial and automotive applications.

Maximum Collector-Emitter Voltage: 60 V

The high maximum collector-emitter voltage of 60V allows for safe operation within a wide range of voltage levels, increasing versatility.

Transistor Element Material: SILICON

The use of silicon as the transistor element material ensures high performance, reliability, and durability in demanding electronic applications.

Maximum Collector Current (IC): 2 A

With a maximum collector current of 2A, this transistor can handle high current loads, making it suitable for power amplification tasks.

Terminal Finish: TIN

The tin terminal finish provides good solderability and corrosion resistance, ensuring long-term reliability in varied environmental conditions.

Terminal Position: SINGLE

The single terminal position simplifies circuit connections and prevents confusion during installation, ensuring proper alignment in the circuit.

Case Connection: COLLECTOR

The collector case connection allows for easy integration into the circuit and provides a secure electrical connection for efficient signal transmission.

Technical Specifications

Power Bipolar Junction Transistors (BJT) TIP115G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

60 V

Minimum DC Current Gain (hFE):

500

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

TIP115G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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