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2SA1943-O

Toshiba

2SA1943-O by Toshiba

The Toshiba 2SA1943-O is a PNP BJT transistor with max VCEsat of 3V, IC of 15A, and hFE of 80. Ideal for amplifier applications due to its high power dissipation of 150W and max collector-emitter voltage of 230V. With a package style of flange mount and operating temp up to 150°C, it offers reliable performance in various electronic circuits.

Median Price

$1.014

Lifecycle Status

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Vyrian

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Micros sp.j. W. Kędra i J. Lic

Poland . 100 parts In-Stock

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Pegasus Components GmbH

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Ampacity Inc.

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Overview

Experience superior quality and performance with the Toshiba 2SA1943-O Power Bipolar Junction Transistor. As a trusted manufacturer in the industry, Toshiba delivers top-of-the-line products that exceed expectations. This PNP transistor is ideal for amplifier applications, offering a maximum power dissipation of 150W and a collector-emitter voltage of 230V. With a minimum current gain of 80hFE and a maximum operating temperature of 150°C, this transistor ensures reliable and efficient operation. Upgrade your electronics with the 2SA1943-O and discover the value and benefits it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the transistor.

Polarity or Channel Type: PNP

Suitable for use in applications where PNP transistors are required, providing flexibility in circuit design.

Configuration: SINGLE

Simplifies circuit design and integration, making it easier to use in various amplifier applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplifying signals.

Maximum VCEsat: 3 V

Low VCEsat value minimizes power loss and improves efficiency in amplifier circuits.

Package Shape: RECTANGULAR

Allows for easy integration into circuit boards and systems with rectangular package specifications.

Terminal Form: THROUGH-HOLE

Enables easy and secure mounting on circuit boards, providing reliable connections for optimal performance.

Maximum Power Dissipation (Abs): 150 W

High power dissipation capability allows the transistor to handle large amounts of power without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount package style provides a secure attachment method and heat dissipation for the transistor.

Maximum Collector-Emitter Voltage: 230 V

With a high VCEO rating, this transistor can handle high voltage applications with ease.

Transistor Element Material: SILICON

Silicon material ensures high performance and reliability in various operating conditions.

Maximum Collector Current (IC): 15 A

High collector current rating allows the transistor to handle large current loads in amplifier circuits.

Nominal Transition Frequency (fT): 30 MHz

High transition frequency ensures fast response times in amplifier applications, making it suitable for high-frequency signals.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SA1943-O attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

230 V

Configuration:

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

150 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

3 V

Trade Compliance

2SA1943-O Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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