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2SA1943O

Inchange Semiconductor

2SA1943O by Inchange Semiconductor

2SA1943O by Inchange Semiconductor is a PNP BJT transistor with max VCEsat of 3V, IC of 15A, and Ptot of 150W. Ideal for amplifier applications due to its high power dissipation capability and low collector-emitter saturation voltage. Suitable for use in various electronic circuits requiring high current amplification.

Median Price

$1.014

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Nova Conductors

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Vyrian

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Micros sp.j. W. Kędra i J. Lic

Poland . 100 parts In-Stock

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Pegasus Components GmbH

Germany . 68 parts In-Stock

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LittleDiode

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GES GmbH

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Aztec Data Supply Inc.

USA . 4,763 parts In-Stock

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Corohmni

South Africa . 677 parts In-Stock

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AZTECH Wire

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Ampacity Inc.

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Semicontronic

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GreenTree Electronics

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ChipstoGo Electronic ltd

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Overview

Looking for a reliable and high-quality Power BJT? Look no further than the 2SA1943O by Inchange Semiconductor! With a maximum power dissipation of 150W and a maximum collector-emitter voltage of 230V, this PNP transistor is ideal for amplifier applications. The 2SA1943O offers superior performance and durability, making it a valuable choice for customers seeking top-notch electronic components. Trust in Inchange Semiconductor's reputation for excellence and choose the 2SA1943O for all your power transistor needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes the transistor lightweight and cost-effective.

Polarity or Channel Type: PNP

PNP transistors are known for their high current amplification capabilities, making this product suitable for amplifier applications.

Configuration: SINGLE

The single configuration simplifies the circuit design and makes it easier to use in various amplifier setups.

Maximum VCEsat: 3 V

The low VCEsat value indicates minimal voltage drop across the collector-emitter junction, resulting in high efficiency and reduced power dissipation.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting and fitting into compact spaces within electronic devices.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a secure and reliable connection to the circuit board, enhancing the overall stability and performance of the transistor.

Maximum Power Dissipation (Abs): 150 W

With a high maximum power dissipation rating of 150 W, this transistor can handle large amounts of power without overheating or damage.

Package Style (Meter): FLANGE MOUNT

The flange mount package style allows for easy mounting on heatsinks or other cooling elements, improving the thermal characteristics of the transistor.

Minimum DC Current Gain (hFE): 55

The high minimum DC current gain ensures consistent and reliable amplification of signals within the circuit.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature rating of 150°C ensures reliable operation even in demanding thermal conditions.

Maximum Collector-Base Capacitance: 360 pF

The low collector-base capacitance minimizes the chances of signal distortion and improves the high-frequency response of the transistor.

Maximum Collector-Emitter Voltage: 230 V

With a high maximum collector-emitter voltage rating of 230 V, this transistor can withstand high voltage applications without breakdown.

Transistor Element Material: SILICON

Silicon material provides good temperature stability and high reliability, making this transistor suitable for a wide range of operating conditions.

Maximum Collector Current (IC): 15 A

The high maximum collector current rating of 15 A allows for handling of large current loads, making it suitable for power amplifier applications.

Terminal Position: SINGLE

The single terminal position simplifies the connection and integration of the transistor into the circuit, reducing complexity and ensuring a more straightforward design.

Nominal Transition Frequency (fT): 30 MHz

The high nominal transition frequency of 30 MHz indicates good high-frequency performance, making this transistor suitable for high-speed amplifier applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SA1943O attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Inchange Semiconductor

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

360 pF

Maximum Collector-Emitter Voltage:

230 V

Configuration:

Minimum DC Current Gain (hFE):

55

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

3 V

Trade Compliance

2SA1943O Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Inchange Semiconductor

Our ISC has been committed to the localization of power semiconductor devices for a long time. The product series include: bipolar transistor BJT Field Effect Transistor MOSFET SCR Thyristor Schottky rectifier diode fast recovery diode High Power Thyristors and Rectifiers and Modules RF Small Signal Transistor RF Transistor voltage regulator integrated circuit Our business started in 1991. We continue to strengthen the four advantages of "specialization, specialization and innovation", insist on the pursuit of quality and independent intellectual property rights, own two brands of isc and iscsemi, and have won more than 3,000 customers at home and abroad. We design chips, tape them out in multiple fabs, and package, test, package, and sell them ourselves. We offer over 56,000 part numbers in industry standard, specialty and custom parts. Voltage from 5V to 6000V, current from 5mA to 5000A. We continue to develop new products and have dozens of patents and high-tech products. Our products are widely used in small mobile devices to large industrial systems: automobiles and motorcycles, electronic speed control modules, medical, portable equipment, industrial equipment, consumer products, LED drivers, power switches, motor drives, rail transit, metallurgy Engineering, wind power generation, solar energy, power facilities, steelmaking, etc. In addition, we continue to manufacture and supply discontinued, hard-to-find, unpopular, and dwindling product models. Our factory is located in the innovative Wuxi New District, with complete production, testing, testing, aging, and assessment equipment. We are a high-tech enterprise in Jiangsu Province and have obtained RoHS certification, REACH certification and GB/T 19001-2016/ISO 9001: 2015 quality management system certification. We have an experienced production, design, quality and service team, and continue to provide technical support services for customers.

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