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2SA1943RTU

Onsemi

2SA1943RTU by Onsemi

The Onsemi 2SA1943RTU is a PNP BJT transistor with max. power dissipation of 150W, max. collector-emitter voltage of 250V, and max. collector current of 17A. It is used in amplifier applications due to its single configuration and silicon element material for high performance amplification at temperatures ranging from -50°C to 150°C.

Median Price

$3.160

Lifecycle Status

EOL

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 483 parts In-Stock

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$6.120

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$4.160

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$3.160

10k+ parts

$2.860

483

$6.120

$4.160

$3.160

$2.860

Rochester

USA . 1,825 parts In-Stock

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-

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$2.400

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$2.150

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$2.020

1,825

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$2.400

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$2.020

Flip Electronics (Authorized)

USA . 1,003 parts In-Stock

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DigiKey

USA . 137 parts In-Stock

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$3.160

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Digiode

USA . 1,889 parts In-Stock

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$2.527

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$2.527

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Nova Conductors

Japan . 150 parts In-Stock

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$3.150

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$3.150

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Flip Electronics

USA . 1,003 parts In-Stock

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Vyrian

USA . 748 parts In-Stock

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DigiKey Marketplace

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VNN

France . 85 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 2,737 parts In-Stock

1+ parts

$1.218

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$1.218

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Ampacity Inc.

Singapore . 603 parts In-Stock

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$2.260

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$2.260

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Semicontronic

India . 491 parts In-Stock

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$2.260

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$2.204

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$2.192

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491

$2.260

$2.204

$2.192

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Corphita

USA . 2,346 parts In-Stock

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$2.394

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$2.394

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Corohmni

South Africa . 196 parts In-Stock

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$2.660

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$2.660

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Advanced Electronics

New Zealand . 3,000 parts In-Stock

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$3.142

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$3.142

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$3.142

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$3.142

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$3.142

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Argo Parts USA

USA . 3,872 parts In-Stock

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$3.150

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Netroflash

USA . 2,000 parts In-Stock

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$3.150

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$3.150

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Continental Prestige Electronics

USA . 97 parts In-Stock

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$3.150

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$3.087

97

$3.150

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$3.087

Microchip USA

USA . 3,108 parts In-Stock

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$18.004

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$18.004

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QUARKTWIN TECHNOLOGY LTD

USA . 10,157 parts In-Stock

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Metaverse IC Inc.

Canada . 4,563 parts In-Stock

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SupplyDigital Components

Austria . 3,007 parts In-Stock

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Authorized Procurement Solutions

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Problanco Electronics

Mexico . 2,582 parts In-Stock

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Glotronic Ltd.

UK . 1,970 parts In-Stock

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TANS Electronics

Latvia . 1,918 parts In-Stock

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Supply Digital

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Assy Fe

Spain . 1,000 parts In-Stock

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UHIMA Technologies

Türkiye . 741 parts In-Stock

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Perfect Parts

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Kulean Microsystems

USA . 425 parts In-Stock

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Overview

Unleash the power of high-quality amplification with the 2SA1943RTU by Onsemi! This Power Bipolar Junction Transistor (BJT) offers unparalleled performance and reliability for your amplifier applications. Manufactured by Onsemi, a trusted leader in semiconductor technology, this PNP transistor boasts a maximum power dissipation of 150W and a maximum collector-emitter voltage of 250V. With a minimum DC current gain of 55 and a nominal transition frequency of 30MHz, this transistor delivers exceptional value and efficiency. Upgrade your amplifier designs with the 2SA1943RTU and experience superior quality like never before!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into existing circuit designs that require a PNP transistor.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces the complexity of the overall system.

Transistor Application: AMPLIFIER

Designed specifically for amplification purposes, this transistor is ideal for use in audio and other amplifier circuits.

Package Shape: RECTANGULAR

The rectangular shape offers efficient utilization of space on a circuit board, allowing for more compact designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals make it easy to securely solder the transistor in place, ensuring stable connections.

No. of Terminals: 3

With 3 terminals, this transistor can easily be connected in a circuit, making it versatile for different applications.

Maximum Power Dissipation (Abs): 150 W

The high power dissipation capacity of 150W allows for the handling of large amounts of power, making it suitable for high-power applications.

Package Style (Meter): FLANGE MOUNT

The flange mount style provides a secure mounting option, ideal for applications where stability is key.

Minimum DC Current Gain (hFE): 55

A minimum DC current gain of 55 ensures the transistor can amplify signals effectively, making it a reliable choice for amplifier circuits.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150°C, this transistor can withstand elevated temperatures without malfunctioning.

Maximum Collector-Emitter Voltage: 250 V

The high collector-emitter voltage rating of 250V allows for the transistor to handle high voltage levels, making it versatile for various applications.

Transistor Element Material: SILICON

The use of silicon as the transistor element material ensures reliable and consistent performance over time.

Minimum Operating Temperature: -50 °C

The low minimum operating temperature of -50°C allows for the transistor to function in cold environments without issues.

Maximum Collector Current (IC): 17 A

With a maximum collector current of 17A, this transistor can handle high current loads, making it suitable for power applications.

Terminal Finish: MATTE TIN

The matte tin finish on the terminals provides good solderability and corrosion resistance, ensuring a reliable connection.

Terminal Position: SINGLE

The single terminal position simplifies installation and connections, making it easier to integrate into a circuit.

Nominal Transition Frequency (fT): 30 MHz

With a nominal transition frequency of 30MHz, this transistor can switch signals at high speeds, making it suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SA1943RTU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

250 V

Configuration:

Minimum DC Current Gain (hFE):

55

JEDEC-95 Code:

TO-264AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-50 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SA1943RTU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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