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2SA1943N(S1,E,S)

Toshiba

2SA1943N(S1,E,S) by Toshiba

Toshiba's 2SA1943N(S1,E,S) is a PNP BJT with max VCEsat of 3V, ideal for amplifier applications. With a max power dissipation of 150W and max collector-emitter voltage of 230V, it offers high performance in audio amplifiers. Featuring a min hFE of 35 and fT of 30MHz, this transistor ensures efficient signal processing in various electronic circuits.

Median Price

$2.487

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Newark

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$0.910

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$0.910

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$0.910

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$0.910

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$0.910

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$0.910

Farnell

UK . 182 parts In-Stock

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$2.200

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$1.410

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$0.895

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182

$2.200

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$0.895

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Chip1Stop

Japan . 3 parts In-Stock

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$2.980

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Mouser Electronics

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$3.650

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$1.440

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$1.240

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$3.650

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DigiKey

USA . 522 parts In-Stock

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$3.650

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$1.676

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$1.272

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$1.249

522

$3.650

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$1.249

Element14

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$202.710

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$146.830

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$93.500

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TTI

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RS (Exports)

UK . 150 parts In-Stock

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$1.768

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$1.732

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Verical

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Nova Conductors

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Semicontronic

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$0.751

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Aztec Data Supply Inc.

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$1.930

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Argo Parts USA

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Advanced Electronics

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Allen Electronics Distributors

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$1.390

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Continental Prestige Electronics

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iodParts Technologies Inc.

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Overview

Looking for a reliable Power Bipolar Junction Transistor for your amplifier applications? Look no further than the 2SA1943N(S1,E,S) by Toshiba. With a maximum power dissipation of 150W and a collector-emitter voltage of 230V, this PNP transistor offers exceptional performance and reliability. Whether you're a hobbyist or a professional in the electronics industry, this transistor's high DC current gain and low VCEsat ensure efficient amplification with minimal power loss. Trust Toshiba's reputation for quality and innovation to take your projects to the next level.

Feature Benefit Bullets

Polarity or Channel Type: PNP

PNP transistors are ideal for amplification applications, making this product suitable for amplifier circuits.

Maximum VCEsat: 3 V

Low VCEsat value indicates minimal saturation voltage, leading to efficient operation and reduced power losses.

Maximum Power Dissipation (Abs): 150 W

High power dissipation capability allows the transistor to handle large amounts of power without overheating, making it reliable for high-power applications.

Minimum DC Current Gain (hFE): 35

A higher DC current gain ensures stable and consistent amplification performance in various operating conditions.

Maximum Collector-Emitter Voltage: 230 V

The high collector-emitter voltage rating ensures the transistor can handle large voltage swings in the circuit without breakdown, enhancing its reliability.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SA1943N(S1,E,S) attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

360 pF

Maximum Collector-Emitter Voltage:

230 V

Configuration:

Minimum DC Current Gain (hFE):

35

JESD-30 Code:

R-XSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

3 V

Trade Compliance

2SA1943N(S1,E,S) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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