Loading...

2SA1943

Onsemi

2SA1943 by Onsemi

Onsemi's 2SA1943 is a PNP BJT with max VCEsat of 3V, IC of 17A, and Ptot of 150W. Ideal for amplifier applications due to its single configuration and silicon element material. Operates b/w -50°C to 150°C with a VCEO of 250V.

Median Price

$7.470

Lifecycle Status

Suppliers In-Stock

20

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 2,000 parts In-Stock

1+ parts

$7.470

100+ parts

$2.690

1k+ parts

$1.600

10k+ parts

$1.360

2,000

$7.470

$2.690

$1.600

$1.360

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,518 parts In-Stock

1+ parts

$2.318

100+ parts

-

1k+ parts

-

10k+ parts

-

1,518

$2.318

-

-

-

Vyrian

USA . 6,893 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,893

-

-

-

-

Chip Stock

USA . 5,048 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,048

-

-

-

-

Magnum Semiconductors LLP

India . 1,100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,100

-

-

-

-

PC Components Company LLC

USA . 230 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

230

-

-

-

-

Bristol Electronics

USA . 230 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

230

-

-

-

-

Partservice

France . 190 parts In-Stock

1+ parts

-

100+ parts

$1.532

1k+ parts

$1.505

10k+ parts

$1.505

190

-

$1.532

$1.505

$1.505

Micros sp.j. W. Kędra i J. Lic

Poland . 190 parts In-Stock

1+ parts

-

100+ parts

$1.641

1k+ parts

$1.612

10k+ parts

$1.612

190

-

$1.641

$1.612

$1.612

Micros

Poland . 100 parts In-Stock

1+ parts

-

100+ parts

$1.414

1k+ parts

$1.384

10k+ parts

-

100

-

$1.414

$1.384

-

Sensible Micro Corp

USA . 100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

100

-

-

-

-

MRC Electronics

USA . 95 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

95

-

-

-

-

Nova Conductors

Japan . 46 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

46

-

-

-

-

LittleDiode

UK . 33 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

33

-

-

-

-

Manotoh

Italy . 25 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

25

-

-

-

-

Fibra_Brandt Electronic GMBH

Germany . 24 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

24

-

-

-

-

Tech-Mark Corp

USA . 21 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

21

-

-

-

-

GES GmbH

Germany . 14 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

14

-

-

-

-

Goldney Electronics S.L.

Spain . 4 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4

-

-

-

-

ECAB

Sweden . 1 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 186 parts In-Stock

1+ parts

$1.414

100+ parts

-

1k+ parts

-

10k+ parts

-

186

$1.414

-

-

-

Corphita

USA . 1,863 parts In-Stock

1+ parts

$2.196

100+ parts

-

1k+ parts

-

10k+ parts

-

1,863

$2.196

-

-

-

AZTECH Wire

Italy . 496 parts In-Stock

1+ parts

$7.080

100+ parts

-

1k+ parts

-

10k+ parts

-

496

$7.080

-

-

-

Kepictronics

USA . 12,580 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

12,580

-

-

-

-

Infinite Electronics LLP (Excess)

. 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10,000

-

-

-

-

SupplyDigital Components

Austria . 4,955 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,955

-

-

-

-

Continental Prestige Electronics

USA . 4,613 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,613

-

-

-

-

Kulean Microsystems

USA . 4,160 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,160

-

-

-

-

TANS Electronics

Latvia . 3,777 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,777

-

-

-

-

Argo Parts USA

USA . 2,510 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,510

-

-

-

-

Problanco Electronics

Mexico . 2,327 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,327

-

-

-

-

Bastille Electronics

Australia . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

-

-

-

-

iodParts Technologies Inc.

India . 983 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

983

-

-

-

-

UHIMA Technologies

Türkiye . 910 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

910

-

-

-

-

Perfect Parts

USA . 9 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

9

-

-

-

-

Overview

Power up your audio systems with the high-quality 2SA1943 PNP Power Bipolar Junction Transistor from Onsemi. Designed for amplifier applications, this transistor offers a maximum collector-emitter voltage of 250V and a maximum power dissipation of 150W, ensuring reliable performance in various settings. With a minimum DC current gain of 35 and a wide operating temperature range, the 2SA1943 delivers exceptional value and efficiency. Upgrade your electronic projects today with this top-notch component from a trusted manufacturer like Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring long-term reliability.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required, offering versatility in design.

Transistor Application: AMPLIFIER

Designed specifically for amplification purposes, ensuring optimal performance in audio or signal processing circuits.

Maximum VCEsat: 3 V

Low saturation voltage results in minimal power loss and improved efficiency.

Maximum Power Dissipation (Abs): 150 W

High power dissipation capability allows for handling large currents and voltages without overheating.

Maximum Collector-Emitter Voltage: 250 V

Can withstand high voltages, making it suitable for a wide range of applications.

Minimum DC Current Gain (hFE): 35

Provides consistent and reliable amplification of input signals.

Maximum Collector Current (IC): 17 A

Capable of handling high currents, making it suitable for power applications.

Nominal Transition Frequency (fT): 30 MHz

High transition frequency allows for fast switching speeds in electronic circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SA1943 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

250 V

Configuration:

Minimum DC Current Gain (hFE):

35

JEDEC-95 Code:

TO-264AA

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-50 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

3 V

Trade Compliance

2SA1943 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20