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BD139-16

NXP Semiconductors

BD139-16 by NXP Semiconductors

BD139-16 by NXP Semiconductors is a NPN BJT transistor with 80V VCE, 1.5A IC, and 100 hFE. It is ideal for amplifier applications with a max power dissipation of 8W in a through-hole package style. Operating up to 150°C, it offers a transition frequency of 190MHz for high-performance requirements.

Median Price

$0.420

Lifecycle Status

Suppliers In-Stock

54

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 428,199 parts In-Stock

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$0.069

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428,199

$0.069

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Distrelec

Netherlands . 1,124 parts In-Stock

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$0.507

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$0.305

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$0.218

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1,124

$0.507

$0.305

$0.218

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Newark

USA . 24 parts In-Stock

1+ parts

$0.639

100+ parts

$0.254

1k+ parts

$0.173

10k+ parts

$0.124

24

$0.639

$0.254

$0.173

$0.124

Mouser Electronics

USA . 4,325 parts In-Stock

1+ parts

$0.660

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$0.262

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$0.178

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$0.129

4,325

$0.660

$0.262

$0.178

$0.129

Adafruit Industries

USA . 2,000 parts In-Stock

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$1.156

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$1.098

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$1.156

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DigiKey

USA . 8,274 parts In-Stock

1+ parts

$1.440

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$0.600

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$0.426

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$0.328

8,274

$1.440

$0.600

$0.426

$0.328

Verical

USA . 428,130 parts In-Stock

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$0.070

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EBV Elektronik

Germany . 153,050 parts In-Stock

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Chip1Stop

Japan . 124,119 parts In-Stock

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$0.172

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$0.085

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Farnell

UK . 17,227 parts In-Stock

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$0.140

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Future Electronics

Canada . 11,850 parts In-Stock

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Element14

Singapore . 4,735 parts In-Stock

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RS (Exports)

UK . 1,300 parts In-Stock

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Distributors (In-Stock)

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Digiode

USA . 1,568 parts In-Stock

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Nova Conductors

Japan . 310 parts In-Stock

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Maritex

Poland . 521 parts In-Stock

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Forefront Electronics and Design

USA . 118 parts In-Stock

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IBS Electronics

USA . 103,600 parts In-Stock

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Vyrian

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RLX Solution Inc.

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Micros sp.j. W. Kędra i J. Lic

Poland . 6,350 parts In-Stock

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Rutronik

Germany . 5,950 parts In-Stock

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Halfin

Belgium . 5,840 parts In-Stock

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TME

Poland . 4,900 parts In-Stock

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Anansix

USA . 3,247 parts In-Stock

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Micros

Poland . 3,169 parts In-Stock

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Partservice

France . 2,500 parts In-Stock

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Holdelec - ElecDif-Pro

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NAC Semi

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LIBRA Elektronik GmbH

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ECAB

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Prism Electronics

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SOS electronic

Slovakia . 530 parts In-Stock

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Extreme Components

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Ramos S.r.l.

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ComSIT Distribution GmbH

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ComSIT USA

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ACDS - Activité Composants Distribution Service

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Cogito LLC

Ukraine . 137 parts In-Stock

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Pegasus Components GmbH

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Digital Electronic Gebert Verwaltungs UG

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Flex Direct, LLC

USA . 92 parts In-Stock

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Semtec, LLC

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VNN

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LittleDiode

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EMSNET

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GES GmbH

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Corel Iberica Componentes, S.L.

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Sinequanon

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Italy . 20 parts In-Stock

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Bristol Electronics

USA . 14 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 10 parts In-Stock

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LWI Electronics Inc

India . 7 parts In-Stock

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Ampacity Inc.

Singapore . 87,258 parts In-Stock

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$0.095

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Semicontronic

India . 86,467 parts In-Stock

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Corphita

USA . 6,526 parts In-Stock

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Argo Parts USA

USA . 5,063 parts In-Stock

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Netroflash

USA . 2,000 parts In-Stock

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$0.163

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$0.160

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Continental Prestige Electronics

USA . 14,523 parts In-Stock

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$0.403

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$0.247

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$0.119

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$0.111

14,523

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$0.247

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$0.111

Aztec Data Supply Inc.

USA . 875 parts In-Stock

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$0.423

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$0.423

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Component Stockers USA

USA . 25,793 parts In-Stock

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$0.470

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$0.130

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$0.110

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$0.470

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IDEA Electronic Components Group

UK . 1,462 parts In-Stock

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$1.129

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$1.016

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Advanced Electronics

New Zealand . 2,000 parts In-Stock

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$1.156

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$1.098

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$1.098

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$1.156

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Corohmni

South Africa . 862 parts In-Stock

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$1.753

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MKK Technologies

India . 2,212 parts In-Stock

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$2.123

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DigiPath Technology Company

USA . 2,212 parts In-Stock

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Perfect Parts

USA . 263,302 parts In-Stock

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Infinite Electronics LLP (Excess)

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Kepictronics

USA . 41,250 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 18,392 parts In-Stock

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Glotronic Ltd.

UK . 17,600 parts In-Stock

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Lixinc

USA . 10,351 parts In-Stock

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Metaverse IC Inc.

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Microchip USA

USA . 9,938 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,976 parts In-Stock

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Futuretech Components

Singapore . 4,900 parts In-Stock

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Authorized Procurement Solutions

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Parana Technologies

USA . 1,249 parts In-Stock

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UNI Independent Distributors

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Epart123

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GreenTree Electronics

Israel . 1,000 parts In-Stock

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Cyclops Electronics Ltd (Excess)

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Eastek

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Supply Digital

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Allen Electronics Distributors

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Assy Fe

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Computer Components Inc. - USA

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Robosynatics

Brazil . 27 parts In-Stock

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$0.395

Lucentia Tech

USA . 27 parts In-Stock

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Overview

Experience the superior quality and performance of the BD139-16 by NXP Semiconductors, a leading manufacturer in the industry. This Power Bipolar Junction Transistor (BJT) is perfect for amplifier applications, offering a maximum VCEsat of just 0.5V and a minimum DC Current Gain (hFE) of 100. With a maximum collector current (IC) of 1.5A and a maximum operating temperature of 150°C, this transistor provides exceptional value and efficiency. Upgrade your electronic projects with the BD139-16 and witness the difference in power and reliability!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the transistor easy to handle and resistant to damage.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifier circuits, making this transistor suitable for audio applications.

Configuration: SINGLE

The single configuration makes it easy to integrate this transistor into circuits without the need for complex setups.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplifying signals.

Maximum VCEsat: 0.5 V

Low VCEsat value indicates minimal power loss in the transistor, leading to improved efficiency.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient placement on circuit boards and enables compact design.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and are easy to solder onto circuit boards.

No. of Terminals: 3

Three terminals make it simple to connect the transistor in circuit configurations and control its operation.

Maximum Power Dissipation (Abs): 8 W

High power dissipation capability ensures the transistor can handle demanding applications without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount package style allows for easy mounting and heat dissipation, improving overall performance.

Maximum Power Dissipation Ambient: 8 W

The high ambient power dissipation rating ensures the transistor can operate effectively in various environmental conditions.

Minimum DC Current Gain (hFE): 100

High DC current gain ensures efficient amplification of signals, making the transistor ideal for amplifier circuits.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows the transistor to function reliably in different temperature environments.

Maximum Collector-Emitter Voltage: 80 V

High maximum voltage rating provides protection against voltage spikes and ensures the transistor's durability.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability, making the transistor suitable for demanding applications.

Maximum Collector Current (IC): 1.5 A

High collector current rating allows the transistor to handle large currents, making it suitable for power applications.

Terminal Position: SINGLE

Single terminal position simplifies circuit connections and ensures proper operation of the transistor.

Case Connection: COLLECTOR

Collector case connection ensures efficient heat dissipation and stable performance under high power conditions.

Nominal Transition Frequency (fT): 190 MHz

High transition frequency indicates fast switching speed, making the transistor suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD139-16 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

8 W

Maximum Power Dissipation (Abs):

8 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

BD139-16 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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