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BD13916STU

Onsemi

BD13916STU by Onsemi

BD13916STU by Onsemi is a NPN BJT transistor with 80V VCEO, 1.5A IC, and 12.5W Ptot. Ideal for switching applications, it has hFE of min. 100 and operates up to 150°C. The package is through-hole with matte tin finish, suitable for flange mount configurations.

Median Price

$0.425

Lifecycle Status

Suppliers In-Stock

27

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 350 parts In-Stock

1+ parts

$0.293

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$0.278

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$0.278

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350

$0.293

$0.278

$0.278

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Farnell

UK . 1,945 parts In-Stock

1+ parts

$0.381

100+ parts

$0.191

1k+ parts

$0.148

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1,945

$0.381

$0.191

$0.148

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Arrow

USA . 8,160 parts In-Stock

1+ parts

$0.398

100+ parts

$0.351

1k+ parts

$0.267

10k+ parts

$0.230

8,160

$0.398

$0.351

$0.267

$0.230

Mouser Electronics

USA . 5,513 parts In-Stock

1+ parts

$1.070

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$0.423

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5,513

$1.070

$0.423

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DigiKey

USA . 3,997 parts In-Stock

1+ parts

$1.070

100+ parts

$0.476

1k+ parts

$0.333

10k+ parts

$0.249

3,997

$1.070

$0.476

$0.333

$0.249

Newark

USA . 1,327 parts In-Stock

1+ parts

$1.150

100+ parts

$0.560

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$0.416

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$0.361

1,327

$1.150

$0.560

$0.416

$0.361

Element14

Singapore . 2,554 parts In-Stock

1+ parts

$1.520

100+ parts

$0.601

1k+ parts

$0.369

10k+ parts

$0.356

2,554

$1.520

$0.601

$0.369

$0.356

Rochester

USA . 76,940 parts In-Stock

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-

100+ parts

$0.298

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$0.247

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$0.220

76,940

-

$0.298

$0.247

$0.220

Chip1Stop

Japan . 17,565 parts In-Stock

1+ parts

-

100+ parts

$0.452

1k+ parts

$0.273

10k+ parts

$0.243

17,565

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$0.452

$0.273

$0.243

Master Electronics

USA . 8,110 parts In-Stock

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-

100+ parts

$0.464

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$0.297

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$0.234

8,110

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$0.464

$0.297

$0.234

Verical

USA . 8,100 parts In-Stock

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$0.350

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$0.275

8,100

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$0.350

$0.275

Future Electronics

Canada . 101 parts In-Stock

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$0.320

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$0.310

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$0.295

101

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$0.320

$0.310

$0.295

Distributors (In-Stock)

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Digiode

USA . 2,322 parts In-Stock

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$0.231

100+ parts

-

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2,322

$0.231

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Nova Conductors

Japan . 450 parts In-Stock

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$0.290

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450

$0.290

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Maritex

Poland . 154 parts In-Stock

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$0.920

100+ parts

$0.517

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$0.447

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154

$0.920

$0.517

$0.447

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TME

Poland . 2,660 parts In-Stock

1+ parts

$0.990

100+ parts

$0.433

1k+ parts

$0.320

10k+ parts

$0.263

2,660

$0.990

$0.433

$0.320

$0.263

Vyrian

USA . 19,746 parts In-Stock

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19,746

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IBS Electronics

USA . 8,110 parts In-Stock

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$0.650

1k+ parts

$0.417

10k+ parts

$0.328

8,110

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$0.650

$0.417

$0.328

VNN

France . 7,176 parts In-Stock

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Chip Stock

USA . 5,340 parts In-Stock

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Cyclops Electronics Ltd

UK . 3,654 parts In-Stock

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3,654

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NAC Semi

USA . 1,920 parts In-Stock

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$0.702

1,920

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$0.702

Flip Electronics

USA . 1,920 parts In-Stock

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1,920

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Tectiva GmbH

Germany . 1,618 parts In-Stock

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1,618

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Bristol Electronics

USA . 102 parts In-Stock

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102

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LIBRA Elektronik GmbH

Germany . 60 parts In-Stock

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60

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Prism Electronics

USA . 51 parts In-Stock

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51

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Distributors (Availability)

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Semicontronic

India . 38,813 parts In-Stock

1+ parts

$0.207

100+ parts

$0.202

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$0.201

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38,813

$0.207

$0.202

$0.201

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Ampacity Inc.

Singapore . 19,096 parts In-Stock

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$0.207

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19,096

$0.207

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Corphita

USA . 2,401 parts In-Stock

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$0.219

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2,401

$0.219

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Argo Parts USA

USA . 1,892 parts In-Stock

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$0.276

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$0.268

1,892

$0.276

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$0.268

Netroflash

USA . 100 parts In-Stock

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$0.290

100+ parts

-

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100

$0.290

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Advanced Electronics

New Zealand . 700 parts In-Stock

1+ parts

$0.293

100+ parts

$0.278

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$0.278

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700

$0.293

$0.278

$0.278

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Continental Prestige Electronics

USA . 874 parts In-Stock

1+ parts

$0.622

100+ parts

$0.370

1k+ parts

$0.192

10k+ parts

$0.181

874

$0.622

$0.370

$0.192

$0.181

Corohmni

South Africa . 179 parts In-Stock

1+ parts

$1.765

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179

$1.765

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Aztec Data Supply Inc.

USA . 2,404 parts In-Stock

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$1.914

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2,404

$1.914

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Andel Nordic

Denmark . 219 parts In-Stock

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$2.200

100+ parts

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$1.542

10k+ parts

$1.542

219

$2.200

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$1.542

$1.542

Perfect Parts

USA . 161,280 parts In-Stock

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161,280

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Metaverse IC Inc.

Canada . 36,800 parts In-Stock

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36,800

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Authorized Procurement Solutions

USA . 28,800 parts In-Stock

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28,800

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Glotronic Ltd.

UK . 11,444 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 11,063 parts In-Stock

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Microchip USA

USA . 9,177 parts In-Stock

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TANS Electronics

Latvia . 7,103 parts In-Stock

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Problanco Electronics

Mexico . 7,000 parts In-Stock

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Kulean Microsystems

USA . 6,889 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,293 parts In-Stock

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6,293

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Alle Elektronik GmbH

Germany . 4,195 parts In-Stock

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4,195

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Kepictronics

USA . 3,840 parts In-Stock

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3,840

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SupplyDigital Components

Austria . 2,264 parts In-Stock

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Supply Digital

USA . 2,161 parts In-Stock

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GreenTree Electronics

Israel . 1,920 parts In-Stock

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1,920

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Eastek

USA . 1,920 parts In-Stock

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1,920

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UHIMA Technologies

Türkiye . 419 parts In-Stock

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419

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Robosynatics

Brazil . 150 parts In-Stock

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$7.254

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$7.254

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$7.254

150

-

$7.254

$7.254

$7.254

Lucentia Tech

USA . 150 parts In-Stock

1+ parts

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100+ parts

$7.254

1k+ parts

$7.254

10k+ parts

$7.254

150

-

$7.254

$7.254

$7.254

Overview

Upgrade your power management capabilities with the BD13916STU from Onsemi. This high-quality Power Bipolar Junction Transistor offers exceptional performance in switching applications, providing customers with reliable and efficient operation. With a maximum power dissipation of 12.5W and a maximum collector current of 1.5A, this NPN transistor is perfect for a wide range of electronic projects. Trust Onsemi's reputation for excellence and invest in the BD13916STU for all your power management needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material is durable and provides good protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in electronic circuits for switching and amplification purposes, offering reliable performance.

Configuration: SINGLE

The single configuration simplifies the design and integration of the transistor in circuit applications, making it easier to use.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides efficient and reliable performance in controlling electronic circuits.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting and integration of the transistor into various electronic devices.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer secure connections and easy soldering, ensuring reliable performance in circuit applications.

Maximum Power Dissipation (Abs): 12.5 W

With a high maximum power dissipation, this transistor can handle higher power loads without overheating, ensuring long-term reliability.

Package Style (Meter): FLANGE MOUNT

The flange mount package style provides easy installation and secure mounting of the transistor in electronic assemblies.

Minimum DC Current Gain (hFE): 100

A high minimum DC current gain ensures consistent and stable performance in amplification and switching applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand higher temperatures, suitable for a wide range of operating conditions.

Maximum Collector-Emitter Voltage: 80 V

The high maximum collector-emitter voltage rating allows this transistor to handle higher voltage levels in circuit applications.

Transistor Element Material: SILICON

Silicon is a widely used semiconductor material known for its reliability and efficiency in transistor applications.

Maximum Collector Current (IC): 1.5 A

With a high maximum collector current rating, this transistor can handle higher current loads in circuit applications.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides good conductivity and solderability, ensuring reliable connections in circuit applications.

Terminal Position: SINGLE

Single terminal position simplifies connections and integration of the transistor in electronic circuits, enhancing ease of use.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD13916STU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BD13916STU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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