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MJD117T4G

Onsemi

MJD117T4G by Onsemi

MJD117T4G by Onsemi is a PNP power BJT with 100V VCEO, 2A IC, and 20W max power dissipation. Ideal for switching applications, it features a Darlington configuration with built-in diode and resistor in a small outline package. With a transition frequency of 25MHz and operating temperature up to 150°C, it offers high performance in compact designs.

Median Price

$0.553

Lifecycle Status

Suppliers In-Stock

22

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 100 parts In-Stock

1+ parts

$0.341

100+ parts

$0.292

1k+ parts

-

10k+ parts

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100

$0.341

$0.292

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Adafruit Industries

USA . 15 parts In-Stock

1+ parts

$0.668

100+ parts

$0.608

1k+ parts

$0.548

10k+ parts

-

15

$0.668

$0.608

$0.548

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Newark

USA . 696 parts In-Stock

1+ parts

$1.130

100+ parts

$0.478

1k+ parts

$0.370

10k+ parts

-

696

$1.130

$0.478

$0.370

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DigiKey

USA . 6,814 parts In-Stock

1+ parts

$1.300

100+ parts

$0.539

1k+ parts

$0.381

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6,814

$1.300

$0.539

$0.381

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Farnell

UK . 1,506 parts In-Stock

1+ parts

-

100+ parts

$0.438

1k+ parts

$0.309

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1,506

-

$0.438

$0.309

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Element14

Singapore . 1,506 parts In-Stock

1+ parts

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100+ parts

$1.710

1k+ parts

$1.200

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-

1,506

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$1.710

$1.200

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Rochester

USA . 182 parts In-Stock

1+ parts

-

100+ parts

$0.363

1k+ parts

$0.302

10k+ parts

$0.269

182

-

$0.363

$0.302

$0.269

Verical

USA . 100 parts In-Stock

1+ parts

-

100+ parts

$0.292

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100

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$0.292

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,722 parts In-Stock

1+ parts

$0.282

100+ parts

-

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1,722

$0.282

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Nova Conductors

Japan . 50 parts In-Stock

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$1.000

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50

$1.000

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NAC Semi

USA . 25,000 parts In-Stock

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-

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$0.570

25,000

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$0.570

Sensible Micro Corp

USA . 22,500 parts In-Stock

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22,500

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IBS Electronics

USA . 22,500 parts In-Stock

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$0.357

22,500

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$0.357

Cyclops Electronics Ltd

UK . 14,431 parts In-Stock

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14,431

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Chip Stock

USA . 11,440 parts In-Stock

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Vyrian

USA . 5,151 parts In-Stock

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Flip Electronics

USA . 5,000 parts In-Stock

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5,000

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ACDS - Activité Composants Distribution Service

France . 2,037 parts In-Stock

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2,037

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ComSIT Distribution GmbH

Germany . 1,715 parts In-Stock

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1,715

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J2 Sourcing AB

Sweden . 433 parts In-Stock

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433

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Bristol Electronics

USA . 16 parts In-Stock

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16

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Atlantic Semiconductor

USA . 16 parts In-Stock

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16

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 6,579 parts In-Stock

1+ parts

$0.229

100+ parts

-

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6,579

$0.229

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Semicontronic

India . 6,425 parts In-Stock

1+ parts

$0.229

100+ parts

$0.223

1k+ parts

$0.222

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6,425

$0.229

$0.223

$0.222

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Corohmni

South Africa . 212 parts In-Stock

1+ parts

$0.257

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212

$0.257

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Corphita

USA . 2,225 parts In-Stock

1+ parts

$0.267

100+ parts

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2,225

$0.267

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Component Stockers USA

USA . 8,612 parts In-Stock

1+ parts

$0.300

100+ parts

$0.280

1k+ parts

$0.460

10k+ parts

$0.360

8,612

$0.300

$0.280

$0.460

$0.360

Continental Prestige Electronics

USA . 4,198 parts In-Stock

1+ parts

$0.365

100+ parts

-

1k+ parts

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10k+ parts

$0.357

4,198

$0.365

-

-

$0.357

Argo Parts USA

USA . 1,038 parts In-Stock

1+ parts

$0.365

100+ parts

-

1k+ parts

-

10k+ parts

$0.354

1,038

$0.365

-

-

$0.354

Advanced Electronics

New Zealand . 15 parts In-Stock

1+ parts

$0.668

100+ parts

$0.608

1k+ parts

$0.548

10k+ parts

-

15

$0.668

$0.608

$0.548

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Netroflash

USA . 100 parts In-Stock

1+ parts

$1.000

100+ parts

-

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100

$1.000

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Aztec Data Supply Inc.

USA . 3,170 parts In-Stock

1+ parts

$1.474

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3,170

$1.474

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Perfect Parts

USA . 86,260 parts In-Stock

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86,260

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Kepictronics

USA . 76,000 parts In-Stock

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Eastek

USA . 75,000 parts In-Stock

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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56,986

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GreenTree Electronics

Israel . 47,500 parts In-Stock

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Authorized Procurement Solutions

USA . 20,000 parts In-Stock

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Kulean Microsystems

USA . 6,453 parts In-Stock

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6,453

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TANS Electronics

Latvia . 6,052 parts In-Stock

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Problanco Electronics

Mexico . 2,841 parts In-Stock

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2,841

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iodParts Technologies Inc.

India . 2,037 parts In-Stock

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2,037

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Cyclops Electronics Ltd (Excess)

UK . 2,037 parts In-Stock

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2,037

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Infinite Electronics LLP (Excess)

. 2,032 parts In-Stock

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2,032

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Glotronic Ltd.

UK . 1,630 parts In-Stock

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1,630

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SupplyDigital Components

Austria . 842 parts In-Stock

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842

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UHIMA Technologies

Türkiye . 91 parts In-Stock

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91

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Overview

Unleash the power of the MJD117T4G by Onsemi, a top-tier manufacturer known for superior quality and innovative technology. This Power Bipolar Junction Transistor (BJT) offers a PNP configuration with a built-in diode and resistor, perfect for switching applications. With a maximum collector-emitter voltage of 100V and a compact small outline package style, this transistor delivers outstanding performance and reliability. Trust Onsemi to provide cutting-edge solutions that exceed your expectations. Experience the difference with the MJD117T4G - where quality meets value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and reliability to the package, making it suitable for various applications and environments.

Polarity or Channel Type: PNP

PNP configuration allows for easy integration into circuits with complementary NPN transistors, enhancing versatility in design.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Darlington configuration offers high current gain and built-in diode and resistor make it convenient for certain applications requiring these components.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring reliable and efficient performance in switching operations.

Surface Mount: YES

Surface mount capability allows for easy and space-efficient PCB integration, ideal for compact electronic designs.

Maximum Power Dissipation (Abs): 20 W

High power dissipation capability supports handling of large power loads without overheating, ensuring operational stability.

Minimum DC Current Gain (hFE): 200

High DC current gain provides effective amplification and control capabilities, enhancing overall performance in various applications.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for reliable operation in diverse environmental conditions, ensuring stability and durability.

Maximum Collector-Emitter Voltage: 100 V

High maximum collector-emitter voltage rating provides robustness and protection against voltage spikes, enhancing reliability in power applications.

Maximum Collector Current (IC): 2 A

High collector current rating allows for handling of substantial current flows, making it suitable for applications requiring high current capabilities.

Nominal Transition Frequency (fT): 25 MHz

High transition frequency enables fast switching speeds and high-frequency operation, making it ideal for applications requiring rapid signal processing.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJD117T4G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

100 V

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJD117T4G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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