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BD679AG

Onsemi

BD679AG by Onsemi

BD679AG by Onsemi is a NPN Power BJT with 40W power dissipation, 750 min hFE, and 80V VCE. Ideal for amplifier applications due to its Darlington configuration with built-in diode and resistor. Package style is flange mount with through-hole terminals.

Median Price

$1.820

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 500 parts In-Stock

1+ parts

$1.820

100+ parts

$1.656

1k+ parts

$1.492

10k+ parts

-

500

$1.820

$1.656

$1.492

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$0.517

100+ parts

-

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10

$0.517

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Digiode

USA . 119 parts In-Stock

1+ parts

$1.729

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119

$1.729

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Chip Stock

USA . 38,000 parts In-Stock

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38,000

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Vyrian

USA . 3,808 parts In-Stock

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3,808

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Kruse Electronics AG

Switzerland . 2,212 parts In-Stock

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2,212

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VNN

France . 1,310 parts In-Stock

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1,310

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 53 parts In-Stock

1+ parts

$0.412

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-

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53

$0.412

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Corohmni

South Africa . 149 parts In-Stock

1+ parts

$0.507

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149

$0.507

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Continental Prestige Electronics

USA . 6,695 parts In-Stock

1+ parts

$0.517

100+ parts

-

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$0.507

6,695

$0.517

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-

$0.507

Argo Parts USA

USA . 3,647 parts In-Stock

1+ parts

$0.517

100+ parts

-

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10k+ parts

$0.501

3,647

$0.517

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-

$0.501

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.517

100+ parts

$0.507

1k+ parts

-

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100

$0.517

$0.507

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Semicontronic

India . 456 parts In-Stock

1+ parts

$1.550

100+ parts

$1.511

1k+ parts

$1.504

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456

$1.550

$1.511

$1.504

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Ampacity Inc.

Singapore . 118 parts In-Stock

1+ parts

$1.550

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118

$1.550

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Corphita

USA . 1,484 parts In-Stock

1+ parts

$1.638

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1,484

$1.638

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Advanced Electronics

New Zealand . 500 parts In-Stock

1+ parts

$1.820

100+ parts

$1.656

1k+ parts

$1.492

10k+ parts

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500

$1.820

$1.656

$1.492

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AZTECH Wire

Italy . 591 parts In-Stock

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$5.955

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591

$5.955

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Perfect Parts

USA . 41,232 parts In-Stock

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Lixinc

USA . 17,396 parts In-Stock

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Problanco Electronics

Mexico . 6,694 parts In-Stock

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6,694

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A-Z Elektronik GmbH

Germany . 5,997 parts In-Stock

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5,997

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SupplyDigital Components

Austria . 4,251 parts In-Stock

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Kulean Microsystems

USA . 4,005 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,998 parts In-Stock

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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3,700

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Authorized Procurement Solutions

USA . 3,200 parts In-Stock

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TANS Electronics

Latvia . 2,809 parts In-Stock

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2,809

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Kepictronics

USA . 2,000 parts In-Stock

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2,000

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UHIMA Technologies

Türkiye . 300 parts In-Stock

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300

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Overview

Experience the power of innovation with the BD679AG by Onsemi. Crafted with precision and expertise, this Power BJT offers unparalleled quality and performance. From amplifiers to various electronic applications, this product is designed to meet your needs with its built-in diode and resistor configuration. Trust in Onsemi's reputation for excellence in semiconductor manufacturing as you unlock the full potential of your projects. Upgrade to the BD679AG today and experience the value, benefits, and advantages that only Onsemi can deliver.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifier circuits, making this product a good choice for audio and signal amplification.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration provides high gain and sensitivity, while the built-in diode and resistor simplify circuit design and improve efficiency.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in signal amplification circuits.

Package Shape: RECTANGULAR

The rectangular shape makes it easy to mount and integrate into circuit boards, offering convenience in assembly and layout design.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and easy soldering, enhancing reliability and durability in circuit assembly.

Maximum Power Dissipation (Abs): 40 W

With a high power dissipation rating, this transistor can handle large amounts of power without overheating, ensuring stable and reliable operation.

Package Style (Meter): FLANGE MOUNT

The flange mount package style offers mechanical stability and easy mounting, making it suitable for industrial and automotive applications.

Minimum DC Current Gain (hFE): 750

A high DC current gain ensures accurate and efficient amplification of signals, improving overall performance in amplifier circuits.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures, making it suitable for demanding environments or high-power applications.

Maximum Collector-Emitter Voltage: 80 V

The high collector-emitter voltage rating allows this transistor to handle higher voltages, expanding its range of potential applications.

Transistor Element Material: SILICON

Silicon is a commonly used semiconductor material known for its performance and reliability, ensuring high-quality and consistent operation of the transistor.

Maximum Collector Current (IC): 4 A

With a high collector current rating, this transistor can handle large currents, making it suitable for power amplification and switching applications.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and corrosion resistance, ensuring long-term reliability in various operating conditions.

Terminal Position: SINGLE

The single terminal position simplifies installation and wiring, reducing the risk of errors and improving overall ease of use.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD679AG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

80 V

Minimum DC Current Gain (hFE):

750

JEDEC-95 Code:

TO-225AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BD679AG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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