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2N4401T&A

Continental Device India

2N4401T&A by Continental Device India

2N4401T&A by Continental Device India is a NPN BJT transistor with max VCEsat of 0.75V, hFE of 40, and IC of 0.6A. Ideal for switching applications due to fast rise time (tr) of 20ns and fall time (tf) of 30ns. Operates in temp range -55 to 150 °C with max power dissipation of 1.5W.

Median Price

$0.075

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Nova Conductors

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Aranea Global

USA . 2,000 parts In-Stock

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Argo Parts USA

USA . 2,619 parts In-Stock

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Continental Prestige Electronics

USA . 1,817 parts In-Stock

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AZTECH Wire

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Overview

Upgrade your electronic projects with the 2N4401T&A by Continental Device India, a high-quality Power Bipolar Junction Transistor designed for switching applications. With a reliable manufacturer like Continental Device India behind it, this NPN transistor offers exceptional performance and efficiency. Its fast rise and fall times, low VCEsat, and high power dissipation make it ideal for a wide range of applications. Trust the 2N4401T&A to deliver value, benefits, and advantages to your projects, setting you up for success in the world of electronics.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type:

NPN - Offers versatility in circuit design and compatibility with a wide range of components.

Configuration:

SINGLE - Simplifies the circuit layout and reduces the complexity of the design.

Transistor Application:

SWITCHING - Ideal for applications that require fast switching speeds and high efficiency.

Maximum Rise Time (tr):

20 ns - Ensures quick response times and efficient operation in dynamic circuits.

Maximum VCEsat:

0.75 V - Offers low saturation voltage, minimizing power loss and enhancing efficiency.

Package Shape:

ROUND - Facilitates easy installation and integration into various circuit designs.

Terminal Form:

THROUGH-HOLE - Provides a secure and stable connection for reliable performance.

Maximum Fall Time (tf):

30 ns - Allows for rapid turn-off characteristics, improving overall circuit efficiency.

No. of Terminals:

3 - Simplifies the connection process and saves space on the PCB.

Maximum Power Dissipation (Abs):

1.5 W - Handles moderate power levels without overheating, ensuring long-term reliability.

Package Style (Meter):

CYLINDRICAL - Offers a compact form factor suitable for space-constrained applications.

Maximum Power Dissipation Ambient:

0.625 W - Can dissipate heat effectively, even in high-temperature environments.

Minimum DC Current Gain (hFE):

40 - Provides consistent amplification of the input signal for reliable performance.

Maximum Operating Temperature:

150 °C - Allows for operation in a wide range of temperature conditions.

Maximum Collector-Base Capacitance:

6.5 pF - Minimizes signal distortion and ensures high-frequency performance.

Maximum Collector-Emitter Voltage:

40 V - Handles high voltage levels without breakdown, ensuring circuit integrity.

Transistor Element Material:

SILICON - Offers high reliability and performance compared to other materials.

Maximum Turn On Time (ton):

35 ns - Enables quick activation of the transistor, suitable for fast-switching applications.

Minimum Operating Temperature:

55 °C - Operates reliably even in extreme cold temperatures.

Maximum Collector Current (IC):

0.6 A - Handles moderate current levels for various applications.

Maximum Turn Off Time (toff):

255 ns - Provides fast turn-off characteristics, essential for efficient switching operations.

Terminal Position:

BOTTOM - Facilitates easy PCB mounting and connection.

Reference Standard:

TS-16949 - Meets industry quality standards for consistent performance and reliability.

Nominal Transition Frequency (fT):

250 MHz - Offers high-frequency operation for applications requiring rapid signal processing.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N4401T&A attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Continental Device India

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

6.5 pF

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

40

Maximum Fall Time (tf):

30 ns

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.625 W

Maximum Power Dissipation (Abs):

Reference Standard:

TS-16949

Maximum Rise Time (tr):

20 ns

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

255 ns

Maximum Turn On Time (ton):

35 ns

Maximum VCEsat:

.75 V

Trade Compliance

2N4401T&A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

Manufacturer Highlights

Continental Device India

Continental Device India Ltd., (CDIL) is an ISO 9001, IATF 16949, and ISO 14001 certified company that pioneered the manufacturing of Silicon Semiconductor Chips and Devices in India in 1964. It launched its Electronic Manufacturing Services (EMS) division (Deltron) in 1982. Manufacturing semiconductors for over 50 years, has created a name for CDIL in India and a brand that is recognized globally. This has only been possible by adhering to international standards of quality, constant technology and process upgrades, and due to the hard work of a team of dedicated professionals who have laid down the standards for R&D, engineering and management in India.

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