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TIP41CN

Motorola

TIP41CN by Motorola

TIP41CN by Motorola is a NPN power BJT with 100V VCE, 6A IC, and 65W Pd. Ideal for switching applications, it has hFE of 15 and fT of 3MHz. The transistor comes in a plastic/epoxy package with flange mount style and through-hole terminals.

Median Price

$0.822

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Adafruit Industries

USA . 350 parts In-Stock

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$0.822

100+ parts

$0.781

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$0.781

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350

$0.822

$0.781

$0.781

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Vyrian

USA . 8,910 parts In-Stock

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8,910

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Nova Conductors

Japan . 10 parts In-Stock

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10

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Corohmni

South Africa . 212 parts In-Stock

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$0.389

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212

$0.389

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Semicontronic

India . 210 parts In-Stock

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$0.700

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$0.682

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$0.679

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210

$0.700

$0.682

$0.679

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Ampacity Inc.

Singapore . 125 parts In-Stock

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$0.700

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125

$0.700

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Advanced Electronics

New Zealand . 350 parts In-Stock

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$0.822

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$0.781

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$0.781

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350

$0.822

$0.781

$0.781

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Aztec Data Supply Inc.

USA . 200 parts In-Stock

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$1.884

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200

$1.884

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AZTECH Wire

Italy . 831 parts In-Stock

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$12.174

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831

$12.174

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Continental Prestige Electronics

USA . 2,513 parts In-Stock

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Argo Parts USA

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Bastille Electronics

Australia . 15 parts In-Stock

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Overview

Upgrade your electronic projects with the TIP41CN by Motorola, a top-quality Power Bipolar Junction Transistor that delivers reliable performance and durability. With a trusted manufacturer like Motorola behind it, you can count on this NPN transistor for all your switching needs. Whether you're designing amplifiers, regulators, or motor control circuits, the TIP41CN offers exceptional value and efficiency. Experience the benefits of high power dissipation, low DC current gain, and a maximum collector-emitter voltage of 100V. Trust in Motorola to provide superior components for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes this transistor lightweight and durable.

Polarity or Channel Type: NPN

The NPN configuration allows for high power amplification and switching capabilities, making it versatile for various applications.

Configuration: SINGLE

The single configuration simplifies circuit design and makes the transistor easy to integrate into different electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides fast response times and efficient performance.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy mounting and efficient use of space on a circuit board.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides secure connections and ease of soldering during assembly.

No. of Terminals: 3

With three terminals, this transistor offers flexibility in circuit design and connection options.

Package Style (Meter): FLANGE MOUNT

The flange mount package style ensures stability and heat dissipation, making it suitable for high power applications.

Maximum Power Dissipation: 65 W

With a high maximum power dissipation, this transistor can handle heavy loads and operate reliably under demanding conditions.

Minimum DC Current Gain (hFE): 15

A minimum DC current gain of 15 ensures consistent and reliable amplification of input signals.

Maximum Collector-Emitter Voltage: 100 V

The high maximum collector-emitter voltage rating makes this transistor suitable for a wide range of voltage levels.

Transistor Element Material: SILICON

The use of silicon as the transistor element material ensures high performance, reliability, and temperature resistance.

Maximum Collector Current (IC): 6 A

The high maximum collector current rating allows the transistor to handle large currents without overheating or damage.

Terminal Position: SINGLE

The single terminal position simplifies installation and ensures proper alignment in a circuit.

Case Connection: COLLECTOR

The case connection to the collector terminal facilitates efficient heat dissipation, prolonging the transistor's lifespan.

Nominal Transition Frequency (fT): 3 MHz

The high nominal transition frequency enables fast switching speeds and high-frequency operation for precise control.

Technical Specifications

Power Bipolar Junction Transistors (BJT) TIP41CN attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Motorola

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

6 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

15

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

65 W

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

TIP41CN Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Motorola

Motorola Solutions, Inc., is an American video equipment, telecommunications equipment, software, systems and services provider that succeeded Motorola, Inc., following the spinoff of the mobile phone division into Motorola Mobility in 2011. The company is headquartered in Chicago, Illinois.

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