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2SC5200N(S1,E,S)

Toshiba

2SC5200N(S1,E,S) by Toshiba

Toshiba's 2SC5200N(S1,E,S) is a NPN power BJT with max VCEsat of 3V, IC of 15A, and Pmax of 150W. Ideal for amplifier applications due to its single configuration and silicon element material.

Median Price

$3.710

Lifecycle Status

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DigiKey

USA . 5,523 parts In-Stock

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$3.710

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$1.689

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$1.275

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$1.130

5,523

$3.710

$1.689

$1.275

$1.130

Mouser Electronics

USA . 3,053 parts In-Stock

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$3.710

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$1.540

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$1.190

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$1.130

3,053

$3.710

$1.540

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$1.130

Newark

USA . 605 parts In-Stock

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$4.100

100+ parts

$1.950

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$1.590

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$1.520

605

$4.100

$1.950

$1.590

$1.520

Element14

Singapore . 10 parts In-Stock

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$175.440

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$114.600

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$84.290

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10

$175.440

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$84.290

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TTI

USA . 1,075 parts In-Stock

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$1.280

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$1.190

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$1.130

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RS (Exports)

UK . 290 parts In-Stock

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$1.543

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$1.384

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Chip1Stop

Japan . 150 parts In-Stock

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Verical

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$2.620

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Nova Conductors

Japan . 30 parts In-Stock

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$1.645

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$1.645

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VNN

France . 2,615 parts In-Stock

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Connector Distribution Corp

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Right Parts Inc.

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Vyrian

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Ampacity Inc.

Singapore . 205 parts In-Stock

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$1.280

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$1.280

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Aztec Data Supply Inc.

USA . 3,181 parts In-Stock

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$1.457

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Semicontronic

India . 88 parts In-Stock

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$1.620

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$1.580

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$1.571

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Argo Parts USA

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$1.645

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Netroflash

USA . 1,000 parts In-Stock

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$1.645

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$1.613

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Corohmni

South Africa . 221 parts In-Stock

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$1.750

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Advanced Electronics

New Zealand . 650 parts In-Stock

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$1.802

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$1.712

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$1.712

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$1.802

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Allen Electronics Distributors

USA . 525 parts In-Stock

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$1.804

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$1.124

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Continental Prestige Electronics

USA . 348 parts In-Stock

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$2.130

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$1.350

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Microchip USA

USA . 4,159 parts In-Stock

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Infinite Electronics LLP (Excess)

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Formix International (Excess)

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Authorized Procurement Solutions

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iodParts Technologies Inc.

India . 1,140 parts In-Stock

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Robosynatics

Brazil . 739 parts In-Stock

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$0.820

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$0.820

739

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$0.820

Lucentia Tech

USA . 739 parts In-Stock

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$0.820

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Perfect Parts

USA . 6 parts In-Stock

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Overview

Experience superior performance and reliability with the Toshiba 2SC5200N(S1,E,S) Power Bipolar Junction Transistor. As a leading manufacturer, Toshiba guarantees top-notch quality and durability for all your amplifier applications. Enjoy seamless operation and increased efficiency with a maximum power dissipation of 150W and a maximum collector-emitter voltage of 230V. Trust in Toshiba's expertise to deliver exceptional results, making the 2SC5200N(S1,E,S) the perfect choice for your electronic projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation properties and durability, making the transistor suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this transistor versatile.

Maximum VCEsat: 3 V

Low VCEsat value indicates less power loss in the transistor, leading to efficient operation.

Maximum Power Dissipation (Abs): 150 W

High power dissipation allows the transistor to handle large amounts of power without overheating, making it suitable for high-power applications.

Maximum Collector-Emitter Voltage: 230 V

With a high VCE value, this transistor can handle higher voltages, making it suitable for a wide range of voltage applications.

Nominal Transition Frequency (fT): 30 MHz

High fT value indicates fast switching speeds, making this transistor suitable for high-frequency applications such as RF amplifiers.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SC5200N(S1,E,S) attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

200 pF

Maximum Collector-Emitter Voltage:

230 V

Configuration:

Minimum DC Current Gain (hFE):

35

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

3 V

Trade Compliance

2SC5200N(S1,E,S) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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