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2SC5200

STMicroelectronics

2SC5200 by STMicroelectronics

2SC5200 by STMicroelectronics is a NPN BJT transistor with 150W power dissipation, 230V max collector-emitter voltage, and 15A max collector current. Ideal for switching applications due to its single configuration and 30MHz transition frequency. Package style is flange mount with matte tin terminal finish.

Median Price

$7.470

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 2,000 parts In-Stock

1+ parts

$7.470

100+ parts

$2.690

1k+ parts

$1.600

10k+ parts

$1.360

2,000

$7.470

$2.690

$1.600

$1.360

Distributors (In-Stock)

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Voyager Components

USA . 4 parts In-Stock

1+ parts

$2.371

100+ parts

$2.371

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$2.371

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$2.371

4

$2.371

$2.371

$2.371

$2.371

Digiode

USA . 4,111 parts In-Stock

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$2.983

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4,111

$2.983

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Forefront Electronics and Design

USA . 11 parts In-Stock

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$3.680

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11

$3.680

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Anansix

USA . 2,813 parts In-Stock

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2,813

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Magnum Semiconductors LLP

India . 1,100 parts In-Stock

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Vyrian

USA . 304 parts In-Stock

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304

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Chip Stock

USA . 176 parts In-Stock

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MRC Electronics

USA . 91 parts In-Stock

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91

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Nova Conductors

Japan . 59 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 49 parts In-Stock

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GES GmbH

Germany . 27 parts In-Stock

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Manotoh

Italy . 25 parts In-Stock

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Donberg Electronics Ltd

Ireland . 25 parts In-Stock

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25

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LittleDiode

UK . 6 parts In-Stock

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6

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Fibra_Brandt Electronic GMBH

Germany . 3 parts In-Stock

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R&J Components

USA . 1 parts In-Stock

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1

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ECAB

Sweden . 1 parts In-Stock

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1

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 4,400 parts In-Stock

1+ parts

$1.073

100+ parts

-

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4,400

$1.073

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Corohmni

South Africa . 244 parts In-Stock

1+ parts

$1.632

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244

$1.632

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IDEA Electronic Components Group

UK . 1,548 parts In-Stock

1+ parts

$1.771

100+ parts

-

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$1.594

10k+ parts

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1,548

$1.771

-

$1.594

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Advanced Electronics

New Zealand . 62 parts In-Stock

1+ parts

$2.047

100+ parts

$1.944

1k+ parts

$1.944

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-

62

$2.047

$1.944

$1.944

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Corphita

USA . 3,087 parts In-Stock

1+ parts

$2.826

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3,087

$2.826

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Semicontronic

India . 453 parts In-Stock

1+ parts

$3.200

100+ parts

$3.120

1k+ parts

$3.104

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453

$3.200

$3.120

$3.104

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MKK Technologies

India . 433 parts In-Stock

1+ parts

$3.330

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433

$3.330

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DigiPath Technology Company

USA . 433 parts In-Stock

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$3.330

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433

$3.330

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AZTECH Wire

Italy . 304 parts In-Stock

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$19.420

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304

$19.420

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Kepictronics

USA . 51,000 parts In-Stock

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Metaverse IC Inc.

Canada . 36,520 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 26,579 parts In-Stock

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Authorized Procurement Solutions

USA . 20,000 parts In-Stock

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Lixinc

USA . 12,847 parts In-Stock

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Infinite Electronics LLP (Excess)

. 8,104 parts In-Stock

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Continental Prestige Electronics

USA . 6,070 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,542 parts In-Stock

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Argo Parts USA

USA . 1,281 parts In-Stock

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Parana Technologies

USA . 1,243 parts In-Stock

1+ parts

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$2.118

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$2.118

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Robosynatics

Brazil . 500 parts In-Stock

1+ parts

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$2.056

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$2.056

10k+ parts

$2.056

500

-

$2.056

$2.056

$2.056

Lucentia Tech

USA . 500 parts In-Stock

1+ parts

-

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$2.056

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$2.056

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$2.056

500

-

$2.056

$2.056

$2.056

Bastille Electronics

Australia . 100 parts In-Stock

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100

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iodParts Technologies Inc.

India . 84 parts In-Stock

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Perfect Parts

USA . 71 parts In-Stock

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71

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RTC Component Inc.

USA . 1 parts In-Stock

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Overview

Unleash the power of innovation with the STMicroelectronics 2SC5200 Power Bipolar Junction Transistor. Crafted with precision and expertise, this NPN transistor offers exceptional switching capabilities for various applications. With a maximum power dissipation of 150W and a collector-emitter voltage of 230V, this transistor delivers reliable performance in a compact rectangular package. Whether you're designing amplifiers, power supplies, or industrial control systems, the 2SC5200 provides unmatched quality and efficiency. Elevate your projects with the superior technology and reliability of STMicroelectronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good insulation and protection for the transistor, making it more durable and reliable.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications, offering high efficiency and fast switching speeds.

Configuration: SINGLE

Single configuration makes the transistor easy to use and integrate into various circuit designs.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance in such scenarios.

Package Shape: RECTANGULAR

Rectangular shape allows for compact mounting and efficient use of space in circuit layouts.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a secure and reliable connection to the circuit board.

Maximum Power Dissipation (Abs): 150 W

High power dissipation capability allows the transistor to handle demanding applications without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount package style offers easy and secure mounting options for different types of installations.

Minimum DC Current Gain (hFE): 35

Minimum DC current gain of 35 ensures consistent and reliable amplification in various circuit configurations.

Maximum Operating Temperature: 150 °C

Operates efficiently at temperatures up to 150°C, suitable for a wide range of applications.

Maximum Collector-Emitter Voltage: 230 V

High maximum collector-emitter voltage rating of 230V provides safety margin for voltage spikes and surges.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability for the transistor element, ensuring long-term stability.

Maximum Collector Current (IC): 15 A

High maximum collector current rating of 15A allows the transistor to handle high current loads with ease.

Terminal Finish: MATTE TIN

Matte tin terminal finish offers good solderability and ensures a reliable electrical connection.

Terminal Position: SINGLE

Single terminal position simplifies the installation process and makes it easier to connect to the circuit.

Nominal Transition Frequency (fT): 30 MHz

High nominal transition frequency of 30MHz enables fast switching speeds and reliable performance in high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SC5200 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

230 V

Configuration:

Minimum DC Current Gain (hFE):

35

JEDEC-95 Code:

TO-264AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SC5200 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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