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2N3055AG

Onsemi

2N3055AG by Onsemi

2N3055AG by Onsemi is a NPN BJT transistor with 115W power dissipation, 60V max collector-emitter voltage, and 15A max collector current. Ideal for switching applications due to its single configuration and 0.8MHz transition frequency.

Median Price

$7.570

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 458 parts In-Stock

1+ parts

$5.870

100+ parts

$3.080

1k+ parts

$2.540

10k+ parts

-

458

$5.870

$3.080

$2.540

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RS (Exports)

UK . 86 parts In-Stock

1+ parts

$6.692

100+ parts

$4.543

1k+ parts

$4.025

10k+ parts

-

86

$6.692

$4.543

$4.025

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Mouser Electronics

USA . 919 parts In-Stock

1+ parts

$7.570

100+ parts

-

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-

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919

$7.570

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-

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DigiKey

USA . 4 parts In-Stock

1+ parts

$7.570

100+ parts

$3.752

1k+ parts

$3.186

10k+ parts

-

4

$7.570

$3.752

$3.186

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Newark

USA . 95 parts In-Stock

1+ parts

$8.430

100+ parts

$4.740

1k+ parts

$4.180

10k+ parts

-

95

$8.430

$4.740

$4.180

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Element14

Singapore . 421 parts In-Stock

1+ parts

$10.520

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-

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421

$10.520

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-

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Verical

USA . 185 parts In-Stock

1+ parts

-

100+ parts

$4.564

1k+ parts

$4.172

10k+ parts

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185

-

$4.564

$4.172

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 500 parts In-Stock

1+ parts

$4.289

100+ parts

-

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-

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500

$4.289

-

-

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Digiode

USA . 1,749 parts In-Stock

1+ parts

$5.472

100+ parts

-

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-

10k+ parts

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1,749

$5.472

-

-

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NAC Semi

USA . 1,200 parts In-Stock

1+ parts

-

100+ parts

$7.900

1k+ parts

-

10k+ parts

$7.110

1,200

-

$7.900

-

$7.110

Chip Stock

USA . 224 parts In-Stock

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-

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-

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224

-

-

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IBS Electronics

USA . 190 parts In-Stock

1+ parts

-

100+ parts

$4.238

1k+ parts

$3.822

10k+ parts

$3.705

190

-

$4.238

$3.822

$3.705

Vyrian

USA . 142 parts In-Stock

1+ parts

-

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-

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142

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VNN

France . 100 parts In-Stock

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100

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Sunrise Surplus Inc.

USA . 4 parts In-Stock

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-

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-

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4

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-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Modulus Dynamics

Lithuania . 20,489 parts In-Stock

1+ parts

$0.421

100+ parts

$0.421

1k+ parts

$0.421

10k+ parts

-

20,489

$0.421

$0.421

$0.421

-

Advanced Electronics

New Zealand . 2,000 parts In-Stock

1+ parts

$1.070

100+ parts

$1.017

1k+ parts

$1.017

10k+ parts

-

2,000

$1.070

$1.017

$1.017

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Aztec Data Supply Inc.

USA . 270 parts In-Stock

1+ parts

$1.669

100+ parts

-

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-

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270

$1.669

-

-

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Ampacity Inc.

Singapore . 198 parts In-Stock

1+ parts

$2.770

100+ parts

-

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-

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198

$2.770

-

-

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Semicontronic

India . 98 parts In-Stock

1+ parts

$2.770

100+ parts

$2.701

1k+ parts

$2.687

10k+ parts

-

98

$2.770

$2.701

$2.687

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Corohmni

South Africa . 164 parts In-Stock

1+ parts

$3.160

100+ parts

-

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-

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164

$3.160

-

-

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Continental Prestige Electronics

USA . 6,140 parts In-Stock

1+ parts

$3.582

100+ parts

-

1k+ parts

-

10k+ parts

$3.510

6,140

$3.582

-

-

$3.510

Argo Parts USA

USA . 1,777 parts In-Stock

1+ parts

$3.582

100+ parts

-

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1,777

$3.582

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-

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Corphita

USA . 235 parts In-Stock

1+ parts

$5.184

100+ parts

-

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235

$5.184

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-

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Lixinc

USA . 12,407 parts In-Stock

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12,407

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Microchip USA

USA . 9,040 parts In-Stock

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9,040

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Kulean Microsystems

USA . 7,845 parts In-Stock

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7,845

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Problanco Electronics

Mexico . 6,795 parts In-Stock

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6,795

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SupplyDigital Components

Austria . 6,199 parts In-Stock

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6,199

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

$4.203

1k+ parts

$4.075

10k+ parts

$3.989

2,000

-

$4.203

$4.075

$3.989

Perfect Parts

USA . 1,705 parts In-Stock

1+ parts

-

100+ parts

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1,705

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-

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UHIMA Technologies

Türkiye . 841 parts In-Stock

1+ parts

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841

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TANS Electronics

Latvia . 397 parts In-Stock

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397

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Robosynatics

Brazil . 200 parts In-Stock

1+ parts

-

100+ parts

$2.539

1k+ parts

$2.539

10k+ parts

$2.539

200

-

$2.539

$2.539

$2.539

Lucentia Tech

USA . 200 parts In-Stock

1+ parts

-

100+ parts

$2.539

1k+ parts

$2.539

10k+ parts

$2.539

200

-

$2.539

$2.539

$2.539

Overview

Unlock the power of innovation with the 2N3055AG by Onsemi. As a leading manufacturer in the industry, Onsemi delivers unparalleled quality and reliability in their Power Bipolar Junction Transistors. Ideal for switching applications, this NPN transistor offers a maximum collector-emitter voltage of 60V and a maximum collector current of 15A, ensuring optimal performance in a variety of projects. With a package style of flange mount and a round shape, the 2N3055AG is versatile and easy to use. Experience the value and benefits of this high-performance transistor today!

Feature Benefit Bullets

Package Body Material: METAL

Metal package provides excellent heat dissipation, increasing the overall reliability and lifespan of the transistor.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications due to their versatile characteristics and ease of use.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces complexity, making it easier to implement in various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring high efficiency and reliability in controlling electrical signals.

Package Shape: ROUND

Round package shape allows for easy mounting and installation in a variety of equipment and circuit layouts.

No. of Terminals: 2

Having only 2 terminals simplifies the connection process and reduces the risk of errors in circuit assembly.

Maximum Power Dissipation (Abs): 115 W

High maximum power dissipation rating allows the transistor to handle high-power applications without overheating or damage.

Maximum Operating Temperature: 200 °C

With a high maximum operating temperature, this transistor can withstand demanding environmental conditions without performance degradation.

Maximum Collector-Emitter Voltage: 60 V

The high collector-emitter voltage rating provides a wide range of voltage handling capabilities for various circuit requirements.

Maximum Collector Current (IC): 15 A

High maximum collector current rating enables the transistor to handle high current loads, making it suitable for power applications.

Nominal Transition Frequency (fT): 0.8 MHz

The nominal transition frequency indicates the speed at which the transistor can switch between on and off states, ensuring efficient performance in high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N3055AG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-204AA

JESD-30 Code:

O-MBFM-P2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N3055AG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-489-2793, 5961004892793

NIIN

004892793

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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