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TIP41CTU

Onsemi

TIP41CTU by Onsemi

TIP41CTU by Onsemi is a NPN power BJT with 100V VCEO, 6A IC, and 65W Ptot. Ideal for switching applications, it has hFE of 15 and fT of 3MHz. The transistor comes in a plastic/epoxy package with through-hole terminals for easy mounting.

Median Price

$1.156

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 9,495 parts In-Stock

1+ parts

$0.280

100+ parts

$0.270

1k+ parts

$0.270

10k+ parts

-

9,495

$0.280

$0.270

$0.270

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Adafruit Industries

USA . 2,000 parts In-Stock

1+ parts

$2.031

100+ parts

$1.930

1k+ parts

$1.930

10k+ parts

-

2,000

$2.031

$1.930

$1.930

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 1,300 parts In-Stock

1+ parts

$0.393

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-

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1,300

$0.393

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Digiode

USA . 681 parts In-Stock

1+ parts

$1.929

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681

$1.929

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Cyclops Electronics Ltd

UK . 116,870 parts In-Stock

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116,870

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Chip Stock

USA . 30,000 parts In-Stock

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Vyrian

USA . 1,522 parts In-Stock

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1,522

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Q Components

USA . 1,000 parts In-Stock

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1,000

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TME

Poland . 390 parts In-Stock

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$0.308

1k+ parts

$0.279

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390

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$0.308

$0.279

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ACDS - Activité Composants Distribution Service

France . 200 parts In-Stock

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200

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Bristol Electronics

USA . 200 parts In-Stock

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200

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Distributors (Availability)

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Continental Prestige Electronics

USA . 9,796 parts In-Stock

1+ parts

$0.327

100+ parts

-

1k+ parts

-

10k+ parts

$0.320

9,796

$0.327

-

-

$0.320

Argo Parts USA

USA . 6,982 parts In-Stock

1+ parts

$0.327

100+ parts

-

1k+ parts

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10k+ parts

$0.317

6,982

$0.327

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-

$0.317

Corohmni

South Africa . 326 parts In-Stock

1+ parts

$0.377

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-

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326

$0.377

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Aranea Global

USA . 2,000 parts In-Stock

1+ parts

$0.385

100+ parts

-

1k+ parts

$0.370

10k+ parts

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2,000

$0.385

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$0.370

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Aztec Data Supply Inc.

USA . 4,315 parts In-Stock

1+ parts

$0.801

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-

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4,315

$0.801

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Ampacity Inc.

Singapore . 3,097 parts In-Stock

1+ parts

$1.730

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3,097

$1.730

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Semicontronic

India . 1,668 parts In-Stock

1+ parts

$1.730

100+ parts

$1.687

1k+ parts

$1.678

10k+ parts

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1,668

$1.730

$1.687

$1.678

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Corphita

USA . 2,222 parts In-Stock

1+ parts

$1.828

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2,222

$1.828

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Advanced Electronics

New Zealand . 2,000 parts In-Stock

1+ parts

$2.031

100+ parts

$1.930

1k+ parts

$1.930

10k+ parts

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2,000

$2.031

$1.930

$1.930

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RC Electronics

USA . 62,723 parts In-Stock

1+ parts

-

100+ parts

$0.400

1k+ parts

$0.370

10k+ parts

$0.350

62,723

-

$0.400

$0.370

$0.350

Perfect Parts

USA . 34,944 parts In-Stock

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34,944

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Authorized Procurement Solutions

USA . 22,000 parts In-Stock

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Microchip USA

USA . 6,840 parts In-Stock

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6,840

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A-Z Elektronik GmbH

Germany . 6,530 parts In-Stock

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SupplyDigital Components

Austria . 5,824 parts In-Stock

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Kepictronics

USA . 3,500 parts In-Stock

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Supply Digital

USA . 2,812 parts In-Stock

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Kulean Microsystems

USA . 2,168 parts In-Stock

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Problanco Electronics

Mexico . 2,036 parts In-Stock

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2,036

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TANS Electronics

Latvia . 1,652 parts In-Stock

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GreenTree Electronics

Israel . 1,230 parts In-Stock

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Futuretech Components

Singapore . 1,000 parts In-Stock

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Assy Fe

Spain . 207 parts In-Stock

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207

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Netroflash

USA . 100 parts In-Stock

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100+ parts

$0.385

1k+ parts

$0.373

10k+ parts

$0.365

100

-

$0.385

$0.373

$0.365

UHIMA Technologies

Türkiye . 6 parts In-Stock

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6

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Overview

Power up your projects with the TIP41CTU Power Bipolar Junction Transistor by Onsemi. With a reputation for quality and reliability, Onsemi delivers top-notch components for all your switching needs. The TIP41CTU offers a maximum power dissipation of 65 W and a collector-emitter voltage of 100 V, making it ideal for a wide range of applications. Whether you're working on DIY electronics or industrial automation, this NPN transistor provides the performance and durability you need. Trust Onsemi for superior components that deliver value, efficiency, and peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, making this product versatile.

Configuration: SINGLE

Simplified design and easy integration into circuits, making it user-friendly.

Transistor Application: SWITCHING

Optimized for efficient switching operations, making it suitable for various electronic applications.

Package Shape: RECTANGULAR

Space-saving design that allows for compact installation in electronic devices.

Maximum Power Dissipation (Abs): 65 W

Can handle high power levels without overheating, ensuring reliable performance in heavy-duty applications.

Package Style (Meter): FLANGE MOUNT

Allows for secure mounting in place, reducing the risk of damage during operation.

Minimum DC Current Gain (hFE): 15

Ensures consistent and reliable amplification of current signals in the circuit.

Maximum Operating Temperature: 150 °C

Capable of operating in high-temperature environments without sacrificing performance.

Maximum Collector-Emitter Voltage: 100 V

Can handle high voltage levels, making it suitable for high-power applications.

Transistor Element Material: SILICON

Silicon transistors offer superior performance and reliability compared to other materials.

Maximum Collector Current (IC): 6 A

Capable of handling high current levels, making it suitable for power applications.

Terminal Finish: Tin (Sn)

Provides a reliable connection and prevents corrosion on the terminals.

Nominal Transition Frequency (fT): 3 MHz

High transition frequency allows for fast switching speeds, enabling quick response times in electronic circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) TIP41CTU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

6 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

15

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin (Sn)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

TIP41CTU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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