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SBCP56T1G

Onsemi

SBCP56T1G by Onsemi

SBCP56T1G by Onsemi is a NPN BJT transistor with 80V VCEO, 1A IC, and 130MHz fT. Ideal for amplifier applications, it comes in a small outline package with Gull Wing terminals for surface mounting. With a max power dissipation of 1.5W and hFE of 40, it operates up to 150°C making it suitable for various electronic designs.

Median Price

$0.340

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 3,301 parts In-Stock

1+ parts

$0.750

100+ parts

$0.300

1k+ parts

$0.192

10k+ parts

$0.174

3,301

$0.750

$0.300

$0.192

$0.174

DigiKey

USA . 2,240 parts In-Stock

1+ parts

$0.750

100+ parts

$0.299

1k+ parts

$0.227

10k+ parts

-

2,240

$0.750

$0.299

$0.227

-

Adafruit Industries

USA . 100 parts In-Stock

1+ parts

$0.971

100+ parts

$0.923

1k+ parts

$0.923

10k+ parts

-

100

$0.971

$0.923

$0.923

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Arrow

USA . 70,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.163

10k+ parts

$0.130

70,000

-

-

$0.163

$0.130

Verical

USA . 70,000 parts In-Stock

1+ parts

-

100+ parts

-

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$0.164

10k+ parts

$0.131

70,000

-

-

$0.164

$0.131

Newark

USA . 29,000 parts In-Stock

1+ parts

-

100+ parts

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$0.178

10k+ parts

$0.134

29,000

-

-

$0.178

$0.134

Element14

Singapore . 1,930 parts In-Stock

1+ parts

-

100+ parts

$0.374

1k+ parts

$0.304

10k+ parts

-

1,930

-

$0.374

$0.304

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Farnell

UK . 363 parts In-Stock

1+ parts

-

100+ parts

$0.306

1k+ parts

$0.182

10k+ parts

-

363

-

$0.306

$0.182

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 70 parts In-Stock

1+ parts

$0.132

100+ parts

-

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70

$0.132

-

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Digiode

USA . 284 parts In-Stock

1+ parts

$0.357

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-

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284

$0.357

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Flip Electronics

USA . 380,000 parts In-Stock

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380,000

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Chip Stock

USA . 51,000 parts In-Stock

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Cyclops Electronics Ltd

UK . 13,000 parts In-Stock

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13,000

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Vyrian

USA . 1,588 parts In-Stock

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1,588

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 2,037 parts In-Stock

1+ parts

$0.112

100+ parts

$0.109

1k+ parts

$0.109

10k+ parts

-

2,037

$0.112

$0.109

$0.109

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Ampacity Inc.

Singapore . 1,712 parts In-Stock

1+ parts

$0.112

100+ parts

-

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1,712

$0.112

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Corohmni

South Africa . 105 parts In-Stock

1+ parts

$0.127

100+ parts

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105

$0.127

-

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Argo Parts USA

USA . 1,302 parts In-Stock

1+ parts

$0.128

100+ parts

-

1k+ parts

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10k+ parts

$0.124

1,302

$0.128

-

-

$0.124

Continental Prestige Electronics

USA . 3,434 parts In-Stock

1+ parts

$0.263

100+ parts

$0.145

1k+ parts

-

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3,434

$0.263

$0.145

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Corphita

USA . 1,083 parts In-Stock

1+ parts

$0.338

100+ parts

-

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1,083

$0.338

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Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$0.971

100+ parts

$0.923

1k+ parts

$0.923

10k+ parts

-

100

$0.971

$0.923

$0.923

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Aztec Data Supply Inc.

USA . 168 parts In-Stock

1+ parts

$1.038

100+ parts

-

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168

$1.038

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Perfect Parts

USA . 157,920 parts In-Stock

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157,920

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Authorized Procurement Solutions

USA . 40,000 parts In-Stock

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Kepictronics

USA . 27,698 parts In-Stock

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27,698

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ChipstoGo Electronic ltd

UK . 16,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 12,513 parts In-Stock

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12,513

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GreenTree Electronics

Israel . 10,000 parts In-Stock

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SupplyDigital Components

Austria . 8,173 parts In-Stock

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Problanco Electronics

Mexico . 5,324 parts In-Stock

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5,324

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Kulean Microsystems

USA . 4,434 parts In-Stock

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4,434

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TANS Electronics

Latvia . 2,328 parts In-Stock

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2,328

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

-

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$0.129

1k+ parts

$0.125

10k+ parts

$0.123

2,000

-

$0.129

$0.125

$0.123

Robosynatics

Brazil . 950 parts In-Stock

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950

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Lucentia Tech

USA . 950 parts In-Stock

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950

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UHIMA Technologies

Türkiye . 462 parts In-Stock

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462

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Lixinc

USA . 103 parts In-Stock

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103

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Overview

Unleash the power of innovation with the SBCP56T1G by Onsemi. Crafted with precision and expertise, this Power Bipolar Junction Transistor (BJT) offers unparalleled performance and reliability for amplifier applications. With a maximum collector-emitter voltage of 80V and a minimum DC current gain of 40, this NPN transistor is designed to exceed expectations. Its compact package shape and surface mount feature make it ideal for space-constrained designs. Trust in Onsemi's legacy of excellence and elevate your projects with the SBCP56T1G - the perfect blend of quality, value, and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring durability and reliability.

Polarity or Channel Type: NPN

Commonly used for amplification and switching applications, versatile and widely supported in circuits.

Configuration: SINGLE

Simplified circuit design with a single transistor, easier to manage and troubleshoot.

Transistor Application: AMPLIFIER

Specifically designed for amplification tasks, ensuring high performance in audio or signal processing.

Surface Mount: YES

Facilitates easy and efficient PCB assembly, suitable for automated production processes.

Package Shape: RECTANGULAR

Space-efficient design for compact circuit layouts, ideal for applications with limited space.

Terminal Form: GULL WING

Ensures secure and reliable solder connections, minimizing the risk of electrical faults.

No. of Terminals: 4

Simplified pin configuration for easy integration into circuit designs, reducing complexity.

Maximum Power Dissipation (Abs): 1.5 W

Handles high power levels efficiently, suitable for amplification tasks requiring significant power output.

Package Style (Meter): SMALL OUTLINE

Compact form factor for space-saving applications, suitable for portable devices or tight PCB layouts.

Minimum DC Current Gain (hFE): 40

Ensures consistent and reliable amplification performance, critical for accurate signal processing.

Maximum Operating Temperature: 150 °C

Maintains stability and performance in high-temperature environments, suitable for demanding industrial applications.

Maximum Collector-Emitter Voltage: 80 V

Supports high voltage applications without risk of breakdown, ensuring reliable performance under varying voltage conditions.

Transistor Element Material: SILICON

Provides excellent electrical properties and reliability, commonly used for high-performance transistors.

Maximum Collector Current (IC): 1 A

Handles high current levels effectively, suitable for power amplification tasks requiring significant current flow.

Terminal Finish: MATTE TIN

Durable and corrosion-resistant finish for reliable electrical connections, ensuring long-term performance.

Terminal Position: DUAL

Offers flexibility in circuit design and PCB layout, accommodating different wiring configurations.

Case Connection: COLLECTOR

Specific terminal connection for efficient and effective collector current handling, optimizing performance.

Maximum Time At Peak Reflow Temperature (s): 30

Resilient to solder reflow processes, ensuring secure and reliable connections during PCB assembly.

Peak Reflow Temperature °C: 260

Withstands high-temperature reflow processes without compromising functionality, suitable for lead-free soldering techniques.

Nominal Transition Frequency (fT): 130 MHz

Provides high-frequency operation for fast signal processing and amplification, ideal for RF applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) SBCP56T1G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

SBCP56T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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