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SBCP56-16T3G

Onsemi

SBCP56-16T3G by Onsemi

SBCP56-16T3G by Onsemi is a NPN BJT transistor with 1A IC, 80V VCE, and 130MHz fT. Ideal for amplifier applications, it comes in a small outline package with Gull Wing terminals for surface mounting. With a max power dissipation of 1.5W and operating temp up to 150°C, it offers reliable performance in various electronic designs.

Median Price

$0.145

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

USA . 14,716 parts In-Stock

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$0.145

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Verical

USA . 14,716 parts In-Stock

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$0.145

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Flip Electronics (Authorized)

USA . 4,000 parts In-Stock

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Rochester

USA . 1,179 parts In-Stock

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$0.168

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$0.140

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$0.124

1,179

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$0.168

$0.140

$0.124

Chip1Stop

Japan . 47 parts In-Stock

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Nova Conductors

Japan . 300 parts In-Stock

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$0.129

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$0.129

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Digiode

USA . 581 parts In-Stock

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$0.131

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Chip Stock

USA . 69,000 parts In-Stock

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IBS Electronics

USA . 56,000 parts In-Stock

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$0.149

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$0.149

ComSIT Distribution GmbH

Germany . 47,550 parts In-Stock

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ComSIT USA

USA . 47,550 parts In-Stock

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Cyclops Electronics Ltd

UK . 46,699 parts In-Stock

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NAC Semi

USA . 36,000 parts In-Stock

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$0.203

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Vyrian

USA . 6,184 parts In-Stock

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Flip Electronics

USA . 4,000 parts In-Stock

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Sensible Micro Corp

USA . 3,970 parts In-Stock

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$0.263

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$0.243

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3,970

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$0.263

$0.243

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Distributors (Availability)

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Corphita

USA . 2,427 parts In-Stock

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$0.124

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Corohmni

South Africa . 315 parts In-Stock

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$0.126

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315

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Argo Parts USA

USA . 3,929 parts In-Stock

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$0.129

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$0.125

3,929

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$0.125

Netroflash

USA . 2,000 parts In-Stock

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$0.129

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Continental Prestige Electronics

USA . 1,517 parts In-Stock

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$0.126

1,517

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Ampacity Inc.

Singapore . 5,871 parts In-Stock

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$0.255

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Aztec Data Supply Inc.

USA . 1,732 parts In-Stock

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$0.830

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Perfect Parts

USA . 417,135 parts In-Stock

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RC Electronics

USA . 92,511 parts In-Stock

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Futuretech Components

Singapore . 10,000 parts In-Stock

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Problanco Electronics

Mexico . 8,157 parts In-Stock

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Kulean Microsystems

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TANS Electronics

Latvia . 4,183 parts In-Stock

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Eastek

USA . 4,000 parts In-Stock

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Kepictronics

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Lixinc

USA . 3,987 parts In-Stock

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SupplyDigital Components

Austria . 2,562 parts In-Stock

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UHIMA Technologies

Türkiye . 387 parts In-Stock

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Overview

Unleash the power of the SBCP56-16T3G by Onsemi, a high-quality Power Bipolar Junction Transistor that amplifies with precision and efficiency. Manufactured by Onsemi, a trusted leader in semiconductor solutions, this NPN transistor offers a multitude of applications in amplification technology. With its small outline package and superior performance, this transistor is a game-changer for electronic projects requiring reliable power amplification. Experience the value and benefits of the SBCP56-16T3G and take your designs to the next level with Onsemi's cutting-edge technology.

Feature Benefit Bullets

Package Body Material - PLASTIC/EPOXY

Durable and lightweight material, provides good insulation and protection to the internal components.

Polarity or Channel Type - NPN

Commonly used type for general purpose amplification, widely compatible with various circuits.

Configuration - SINGLE

Simplified design for easy integration into circuits, suitable for individual use.

Transistor Application - AMPLIFIER

Specifically designed for amplification purposes, ensures optimal performance in signal processing.

Surface Mount - YES

Allows for easy and efficient PCB mounting, suitable for automated assembly processes.

Maximum Power Dissipation (Abs) - 1.5 W

Good power handling capacity, suitable for medium power amplification applications.

Maximum Collector-Emitter Voltage - 80 V

Provides a high voltage tolerance, ensuring reliable operation in various voltage conditions.

Nominal Transition Frequency (fT) - 130 MHz

High frequency response, ideal for applications requiring fast signal processing.

Technical Specifications

Power Bipolar Junction Transistors (BJT) SBCP56-16T3G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

SBCP56-16T3G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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